A
bstract
We describe a proposal to add a set of very forward detectors to the CMS experiment for the high-luminosity era of the Large Hadron Collider to search for beyond the standard model ...long-lived particles, such as dark photons, heavy neutral leptons, axion-like particles, and dark Higgs bosons. The proposed subsystem is called
FACET
for
F
orward-
A
perture
C
MS
E
x
T
ension, and will be sensitive to any particles that can penetrate at least 50 m of magnetized iron and decay in an 18 m long, 1 m diameter vacuum pipe. The decay products will be measured in detectors using identical technology to the planned CMS Phase-2 upgrade.
The Phase-2 upgrade of the Large Hadron Collider (LHC) to High-Luminosity LHC (HL-LHC) allows an increase in the operational luminosity value by a factor of 5–7 that will result in delivering ...3000 fb−1 or more integrated luminosity. Due to high luminosity, the number of interactions per bunch crossings (pileup) will increase up to a value of 140–200. To cope with high pileup rates, a precision minimum ionising particles (MIPs) timing detector (MTD) with a time resolution of ∼30–40 ps and hermetic coverage up to a pseudo-rapidity of |η|=3 is proposed by the Compact Muon Solenoid (CMS) experiment. An endcap part (1.6<|η|<3) of the MTD, called the endcap timing layer, will be based on low-gain avalanche detector (LGAD) technology. LGADs provide a good timing resolution due to a combination of a fast signal rise time and high signal-to-noise ratio. The performance of the ETL depends on optimising the crucial features of the sensors, namely; gain, signal homogeneity, fill factor, leakage current, uniformity of multiple-pad sensors and long term stability. The paper mainly focuses on the study of the fill factor of LGADs with varying temperature and irradiation at varying proton fluences as these sensors will be operated at low temperatures and are subjected to a high radiation environment.
The 3.1 production of LGADs from Hamamatsu Photonics K.K. (HPK) includes 2x2 sensors with different structures, in particular, different values of narrower inactive region widths between the pads, called the no-gain region. In this paper, the term interpad-gap is used instead of no-gain region in order to follow the conventional terminology. These sensors have been designed to study their fill factor, which is the ratio of the area within the active region (gain region) to the total sensor area. A comparative study on the dependence of breakdown voltage with the interpad-gap width for the sensors has been carried out. Using infrared light (as the electron–hole pair creation by IR laser mimics closely to the traversing of MIPs) from the Scanning-Transient Current Technique (Scanning-TCT) set-up shows that the fill factor does not vary significantly with a variation in temperature and irradiation at high proton fluences.
A pixelated silicon detector, developed originally for particle physics experiments, was used for a beam profile measurement of a cobalt-60 (Co-60) irradiator in a water phantom. The beam profile was ...compared to a profile measured with a pinpoint ionization chamber. The differences in the pixel detector and pinpoint chamber relative profiles were within approximately 2% of profile maximum, and after calculating correction factors with Monte Carlo simulations for the pixel detector, the maximum difference was decreased to approximately 1% of profile maximum. The detector’s capability to measure pulse-height was used to record an electron pulse-height spectrum in water in the Co-60 beam, and the results agreed well with simulations.
•A pixelated silicon detector was used for Co-60 beam profile measurements in water.•Profiles agreed with ionization chamber results within 2% of the profile maximum.•Difference was reduced after applying Monte Carlo calculated correction factors.•A pulse height spectrum was measured with the detector in a water phantom.
Abstract
To study the impact of various defects associated close to the surface layer of CdTe material, we use scanning laser Transient Current Technique. This gives us an overview of different ...compositional inhomogeneities, such as dislocations, grain boundaries, and tellurium inclusions. Particularly, reconstructed high resolution spatial images provide a map of different electrically active defects. Each spatial point contains a recording of a current pulse, from which shape we calculate drift times and total collected charge. Charge mobility and charge loss are extracted from current pulses and show the effects of charge trapping and polarization. In addition, we investigate the impact of the ALD alumina-CdTe interface and negative fixed charge trapping using both passivated and non-passivated CdTe crystals.
Abstract
The high-luminosity operation of the Tracker in the Compact Muon Solenid (CMS) detector at the Large Hadron Collider (LHC) experiment calls for the development of silicon-based sensors. This ...involves implementation of AC-coupling to micro-scale pixel sensor areas to provide enhanced isolation of radiation-induced leakage currents. The motivation of this study is the development of AC-pixel sensors with negative oxides (such as aluminium oxide — Al
2
O
3
and hafnium oxide — HfO
2
) as field insulators that possess good dielectric strength and provide radiation hardness. Thin films of Al
2
O
3
and HfO
2
grown by atomic layer deposition (ALD) method were used as dielectrics for capacitive coupling. A comparison study based on dielectric material used in MOS capacitors indicate HfO
2
as a better candidate since it provides higher sensitivity (where, the term sensitivity is defined as the ratio of the change in flat-band voltage to dose) to negative charge accumulation with gamma irradiation. Further, space charge sign inversion was observed for sensors processed on high resistivity p-type Magnetic Czochralski silicon (MCz-Si) substrates that were irradiated with gamma rays up to a dose of 1 MGy. The inter-pixel resistance values of heavily gamma irradiated AC-coupled pixel sensors suggest that high-
K
negative oxides as field insulators provide a good electrical isolation between the pixels.
While Cadmium Telluride (CdTe) excels in terms of photon radiation absorption properties and outperforms silicon (Si) in this respect, the crystal growth, characterization and processing into a ...radiation detector is much more complicated. Additionally, large concentrations of extended crystallographic defects, such as grain boundaries, twins, and tellurium (Te) inclusions, vary from crystal to crystal and can reduce the spectroscopic performance of the processed detector. A quality assessment of the material prior to the complex fabrication process is therefore crucial. To locate the Te-defects, we scan the crystals with infrared microscopy (IRM) in different layers, obtaining a 3D view of the defect distribution. This provides us with important information on the defect density and locations of Te inclusions, and thus a handle to assess the quality of the material. For the classification of defects in the large amount of IRM image data, a convolutional neural network is employed. From the post-processed and analysed IRM data, 3D defect maps of the CdTe crystals are created, which make different patterns of defect agglomerations inside the crystals visible. In total, more than 100 crystals were scanned with the current IRM setup. In this paper, we compare two crystal batches, each consisting of 12 samples. We find significant differences in the defect distributions of the crystals.
Abstract
Cadmium telluride (CdTe) is a high-
Z
material with excellent photon radiation absorption properties, making it a promising material to include in radiation detection technologies. However, ...the brittleness of CdTe crystals as well as their varying concentration of defects necessitate a thorough quality assessment before the complex detector processing procedure. We present our quality assessment of CdTe as a detector material for multispectral medical imaging, a research which is conducted as part of the Consortium Project Multispectral Photon-counting for Medical Imaging and Beam characterization (MPMIB). The aim of the project is to develop novel CdTe detectors and obtain spectrum-per-pixel information that make the distinction between different radiation types and tissues possible. To evaluate the defect density inside the crystals — which can deteriorate the detector performance — we employ infrared microscopy (IRM). Posterior data analysis allows us to visualise the defect distributions as 3D defect maps. Additionally, we investigate front and backside differences of the material with current-voltage (IV) measurements to determine the preferred surface for the pixelisation of the crystal, and perform test measurements with the prototypes to provide feedback for further processing. We present the different parts of our quality assessment chain and will close with first experimental results obtained with one of our prototype photon-counting detectors in a small tomographic setup.
We report on the fabrication of capacitively (AC) coupled n+-in-p pixel detectors on magnetic Czochralski silicon substrates. In our devices, we employ a layer of aluminium oxide (Al2O3) grown by ...atomic layer deposition (ALD) as dielectric and field insulator, instead of the commonly used silicon dioxide (SiO2). As shown in earlier research, Al2O3 thin films exhibit high negative oxide charge, and can thus serve as a substitute for p-stop/p-spray insulation implants between pixels. In addition, they provide far higher capacitance densities than SiO2 due to their high dielectric constant, permitting more efficient capacitive coupling of pixels. Furthermore, metallic titanium nitride (TiN) bias resistors are presented as an alternative to punch-through or poly-Si resistors.
Devices obtained by the above mentioned process are characterized by capacitance–voltage and current–voltage measurements, and by 2 MeV proton microprobe. Results show the expected high negative charge of the Al2O3 dielectric, uniform charge collection efficiency over large areas of pixels, and acceptable leakage current densities.
Optical quality assurance of GEM foils Hildén, T.; Brücken, E.; Heino, J. ...
Nuclear instruments & methods in physics research. Section A, Accelerators, spectrometers, detectors and associated equipment,
01/2015, Letnik:
770
Journal Article
Recenzirano
Odprti dostop
An analysis software was developed for the high aspect ratio optical scanning system in the Detector Laboratory of the University of Helsinki and the Helsinki Institute of Physics. The system is used ...e.g. in the quality assurance of the GEM-TPC detectors being developed for the beam diagnostics system of the SuperFRS at future FAIR facility. The software was tested by analyzing five CERN standard GEM foils scanned with the optical scanning system. The measurement uncertainty of the diameter of the GEM holes and the pitch of the hole pattern was found to be 0.5μm and 0.3μm, respectively. The software design and the performance are discussed. The correlation between the GEM hole size distribution and the corresponding gain variation was studied by comparing them against a detailed gain mapping of a foil and a set of six lower precision control measurements. It can be seen that a qualitative estimation of the behavior of the local variation in gain across the GEM foil can be made based on the measured sizes of the outer and inner holes.
We report initial characterization of our novel sensor process solutions with AC-coupled n+/p−/p+ pixel detectors made on 150 mm diameter p-type Magnetic Czochralski silicon (MCz-Si) wafers. The ...pixels were segmented in a 52 × 80 dual column array and designed to be AC capacitive coupled. The resistive coupling between pixels, allowing quality assurance probing prior the flip chip bonding, was realized with thin film metal-nitride resistors fabricated by sputtering deposition. This approach allows us to omit punch-through resistor structures, which reduces the overall process complexity. Moreover, our previous studies have emphasized that applying ALD Aluminum Oxide (Al2O3) field insulator and passivation layer results in negative net oxide charge and thus additional p-spray or p-stop surface current termination structures are not necessary. Our focused application is a radiation-hard ALD AC-coupled pixel detector to be used in future particle physics experiments, such as the High-Luminosity Large Hadron Collider (HL-LHC), as well as photon counting applications. The pixel detectors were tested at Helsinki Institute of Physics (HIP) Detector laboratory and Ruđer Bošković Institute (RBI). We show measurement data of pixel detectors and other test structures. For the TiN resistors surrounding pixels, the resistance values were measured to be about 15kΩ. Data of electrical properties, full depletion voltage and leakage current are shown as well. Our Transient Current Technique (TCT) measurements indicated clear pixel segmentation with excellent homogeneity. For further study, AC-coupled sensors were hybridized to PSI46dig read out chips (ROC) by flip-chip interconnection technique and tested with a radioactive source.
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