A physics-based device simulation was used to study the charge carrier distribution and the electric field configuration inside simplified two-dimensional models for pixel layouts based on the ATLAS ...pixel sensor. In order to study the behavior of such detectors under different levels of irradiation, a three-level defect model was implemented into the simulation. Using these models, the number of guard rings, the dead edge width and the detector thickness were modified to investigate their influence on the detector depletion at the edge and on its internal electric field distribution in order to optimize the layout parameters. Simulations indicate that the number of guard rings can be reduced by a few hundred microns with respect to the layout used for the present ATLAS sensors, with a corresponding extension of the active area of the sensors. A study of the inter-pixel capacitance and of the capacitance between the implants and the high-voltage contact as a function of several parameters affecting the geometry and the doping level of the implants was also carried out. The results are needed in order to evaluate the noise and the cross-talk among neighboring pixels when connected to the front-end electronics.
In view of the LHC upgrade for the high luminosity phase (HL-LHC), the ATLAS experiment is planning to replace the inner detector with an all-silicon system. The n-in-p bulk technology represents a ...valid solution for the modules of most of the layers, given the significant radiation hardness of this option and the reduced cost. The large area necessary to instrument the outer layers will demand to tile the sensors, a solution for which the inefficient region at the border of each sensor needs to be reduced to the minimum size. This paper reports on a joint R&D project by the ATLAS LPNHE Paris group and FBK Trento on a novel n-in-p edgeless planar pixel design, based on the deep-trench process available at FBK.
In view of the LHC upgrade phases towards HL-LHC, the ATLAS experiment plans to upgrade the inner detector with an all-silicon system. The n-on-p silicon technology is a promising candidate for the ...pixel upgrade thanks to its radiation hardness and cost effectiveness. The edgeless technology would allow for enlarging the area instrumented with pixel detectors. We report on the development of novel n-on-p edgeless planar pixel sensors fabricated at FBK (Trento, Italy), making use of the active edge concept for the reduction of the dead area at the periphery of the device. After discussing the sensor technology and fabrication process, we present device simulations (pre- and post-irradiation) performed for different sensor configurations. First preliminary results obtained with the test-structures of the production are shown.
The performance of planar silicon pixel sensors, in development for the ATLAS Insertable B-Layer and High Luminosity LHC (HL-LHC) upgrades, has been examined in a series of beam tests at the CERN SPS ...facilities since 2009. Salient results are reported on the key parameters, including the spatial resolution, the charge collection and the charge sharing between adjacent cells, for different bulk materials and sensor geometries. Measurements are presented for n super(+)-in-n pixel sensors irradiated with a range of fluences and for p-type silicon sensors with various layouts from different vendors. All tested sensors were connected via bump-bonding to the ATLAS Pixel read-out chip. The tests reveal that both n-type and p-type planar sensors are able to collect significant charge even after the lifetime fluence expected at the HL-LHC.
In view of the LHC upgrade for the High Luminosity Phase (HL-LHC), the ATLAS experiment is planning to replace the Inner Detector with an all-Silicon system. The n-on-p technology represents a valid ...solution for the modules of most of the layers, given the significant radiation hardness of this option and the reduced cost. There is also the demand to reduce the inactive areas to a minimum. The ATLAS LPNHE Paris group and FBK Trento started a collaboration for the development on a novel n-on-p edgeless planar pixel design, based on the deep-trench process which can cope with all these requirements. This paper reports selected results from the electrical characterization, both before and after irradiation, of test structures from the first production batch.
In view of the LHC upgrade phases towards the High Luminosity LHC (HL-LHC), the ATLAS experiment plans to upgrade the Inner Detector with an all-silicon system. Because of its radiation hardness and ...cost effectiveness, the n-on-p silicon technology is a promising candidate for a large area pixel detector. The paper reports on the joint development, by LPNHE and FBK of novel n-on-p edgeless planar pixel sensors, making use of the active trench concept for the reduction of the dead area at the periphery of the device. After discussing the sensor technology, and presenting some sensors' simulation results, a complete overview of the electrical characterization of the produced devices will be given.
The Associative Memory (AM) system of the Fast TracKer (FTK) processor has been designed to perform pattern matching using as input the data from the silicon tracker in the ATLAS experiment. The AM ...is the primary component of the FTK system and is designed using ASIC technology (the AM chip) to execute pattern matching with a high degree of parallelism. The FTK system finds track candidates at low resolution that are seeds for a full resolution track fitting. The AM system implementation is named "Serial Link Processor" and is based on an extremely powerful network of 2 Gb/s serial links to sustain a huge traffic of data. This paper reports on the design of the Serial Link Processor consisting of two types of boards, the Little Associative Memory Board (LAMB), a mezzanine where the AM chips are mounted, and the Associative Memory Board (AMB), a 9U VME motherboard which hosts four LAMB daughterboards. We also report on the performance of the prototypes (both hardware and firmware) produced and tested in the global FTK integration, an important milestone to be satisfied before the FTK production.
The INFN–FBK “Phase-2” R&D program Dalla Betta, G.-F.; Boscardin, M.; Bomben, M. ...
Nuclear instruments & methods in physics research. Section A, Accelerators, spectrometers, detectors and associated equipment,
07/2016, Letnik:
824
Journal Article
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We report on the 3-year INFN ATLAS–CMS joint research activity in collaboration with FBK, started in 2014, and aimed at the development of new thin pixel detectors for the High Luminosity LHC Phase-2 ...upgrades. The program is concerned with both 3D and planar active-edge pixel sensors to be made on 6” p-type wafers. The technology and the design will be optimized and qualified for extreme radiation hardness (2×1016neqcm−2). Pixel layouts compatible with present (for testing) and future (RD53 65nm) front-end chips of ATLAS and CMS are considered. The paper covers the main aspects of the research program, from the sensor design and fabrication technology, to the results of initial tests performed on the first prototypes.
The CERN RD53 collaboration was founded to tackle the extraordinary challenges associated with the design of pixel readout chips for the innermost layers of particle trackers at future high energy ...physics experiments. Around 20 institutions are involved in the collaboration, which has the support of both ATLAS and CMS experiments. The goals of the collaboration include the comprehensive understanding of radiation effects in the 65 nm technology, the development of tools and methodology to efficiently design large complex mixed signal chips and, ultimately, the development of a full size readout chip featuring a 400 × 400 pixel array with 50μm pitch. In August 2017, the collaboration submitted the large scale chip RD53A, integrating a matrix of 400 × 192 pixels and embodying three different analog front-end designs. This work discusses the characteristic of the RD53A chip, with some emphasis on the analog processors, and presents the first test results on the pixel array.
•High particle rates and radiation levels will be reached at the HL-LHC.•New pixel chips for the phase II upgrades of CMS and ATLAS are required.•The RD53A chip has been designed in the framework of the RD53 Collaboration.•Three analog front-ends flavors are integrated in RD53A.•The paper presents the main preliminary results coming from RD53A characterization.
The INFN-FBK pixel R&D program for HL-LHC Meschini, M.; Dalla Betta, G.F.; Boscardin, M. ...
Nuclear instruments & methods in physics research. Section A, Accelerators, spectrometers, detectors and associated equipment,
09/2016, Letnik:
831
Journal Article
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We report on the ATLAS and CMS joint research activity, which is aiming at the development of new, thin silicon pixel detectors for the Large Hadron Collider Phase-2 detector upgrades. This R&D is ...performed under special agreement between Istituto Nazionale di Fisica Nucleare and FBK foundation (Trento, Italy). New generations of 3D and planar pixel sensors with active edges are being developed in the R&D project, and will be fabricated at FBK. A first planar pixel batch, which was produced by the end of year 2014, will be described in this paper. First clean room measurement results on planar sensors obtained before and after neutron irradiation will be presented.
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