In this article, a low-power, radiation-hard front-end circuit for monolithic pixel sensors, designed to meet the requirements of low noise and low pixel-to-pixel variability, the key features to ...achieve high detection efficiencies, is presented. The sensor features a small collection electrode to achieve a small capacitance (<5 fF) and allows full CMOS in-pixel circuitry. The circuit is implemented in the 180-nm CMOS imaging technology from the TowerJazz foundry and integrated into the MALTA2 chip, which is part of a development that targets the specifications of the outer pixel layer of the ATLAS Inner Tracker upgrade at the LHC. One of the main challenges for monolithic sensors is a radiation hardness up to 10 15 1-MeV <inline-formula> <tex-math notation="LaTeX">\text {n}_{\text {eq}}/\text {cm}^{{2}} </tex-math></inline-formula> non-ionizing energy loss (NIEL) and 80 Mrad total ionizing dose (TID) required for this application. Tests up to <inline-formula> <tex-math notation="LaTeX">{3} \cdot {10}^{15} </tex-math></inline-formula> 1-MeV <inline-formula> <tex-math notation="LaTeX">\text {n}_{\text {eq}}/\text {cm}^{{2}} </tex-math></inline-formula> and 100 Mrad were performed on the MALTA2 sensor and front-end circuit, which still show good performance even after these levels of irradiation, promising for even more demanding applications such as the future experiments at the high-luminosity large hadron collider (HL-LHC).
Depleted Monolithic Active Pixel Sensor (DMAPS) prototypes developed in the TowerJazz 180 nm CMOS imaging process have been designed in the context of the ATLAS upgrade Phase-II at the HL-LHC. The ...pixel sensors are characterized by a small collection electrode (3 μm) to minimize capacitance, a small pixel size (36.4× 36.4 μm2), and are produced on high resistivity epitaxial p-type silicon. The design targets a radiation hardness of 1×1015 1 MeV neq/cm2, compatible with the outermost layer of the ATLAS ITK Pixel detector. This paper presents the results from characterization in particle beam tests of the Mini-MALTA prototype that implements a mask change or an additional implant to address the inefficiencies on the pixel edges. Results show full efficiency after a dose of 1×1015 1 MeV neq/cm2.
The Picosecond Avalanche Detector is a multi-junction silicon pixel detector devised to enable charged-particle tracking with high spatial resolution and picosecond time-stamping capability. A ...proof-of-concept prototype of the PicoAD sensor has been produced by IHP microelectronics. Measurements with a 55Fe X-ray radioactive source show that the prototype is functional with an avalanche gain up to a maximum electron gain of 23.
The upgrade of the tracking detectors for the High Luminosity-LHC (HL-LHC) requires the development of novel radiation hard silicon sensors. The development of Depleted Monolithic Active Pixel ...Sensors targets the replacement of hybrid pixel detectors with radiation hard monolithic CMOS sensors. We designed, manufactured and tested radiation hard monolithic CMOS sensors in the TowerJazz 180 nm CMOS imaging technology with small electrodes pixel designs. These designs can achieve pixel pitches well below current hybrid pixel sensors (typically 50 × 50μm) for improved spatial resolution. Monolithic sensors in our design allow to reduce multiple scattering by thinning to a total silicon thickness of only 50μm. Furthermore monolithic CMOS sensors can substantially reduce detector costs. These well-known advantages of CMOS sensor for performance and costs can only be exploited in pp-collisions at HL-LHC if the DMAPS sensors are designed to be radiation hard, capable of high hit rates and have a fast signal response to satisfy the 25 ns bunch crossing structure of LHC. Through the development of the MALTA and Mini-MALTA sensors we show the necessary steps to achieve radiation hardness at 1015 neq/cm2 for DMAPS with small electrode designs. The sensors combine high granularity (pitch 36.4x36.4μm2), low detector capacitance (<5fF/pixel) of the charge collection electrode (3μm), low noise (ENC≈10 e−) and low power operation (1μW/pixel) with a fast signal response (25 ns bunch crossing). The sensors feature arrays of 512 × 512 (MALTA) and 16 × 64 (Mini-MALTA) pixels. To cope with high hit rates expected at HL-LHC (>200 MHz/cm2) we have implemented a novel high-speed asynchronous readout architecture. The paper summarises the optimisation of the pixel design to achieve radiation hard pixel designs with full efficiency after irradiation at >98% after 1015 neq/cm2).
Depleted Monolithic Active Pixel Sensors (DMAPS) are monolithic pixel detectors with high-resistivity substrates designed for use in high-rate and high-radiation environments. They are produced in ...commercial CMOS processes, resulting in relatively low production costs and short turnaround times, and offer a low material budget. LF-Monopix1 and TJ-Monopix1 are large DMAPS prototypes produced in 150 nm LFoundry and 180 nm TowerJazz technology, respectively, that follow two different design concepts regarding the charge collection electrode. Prototypes of both development lines have been extensively tested and characterized over the last years. The second-generation Monopix prototypes, Monopix2, were recently produced. They were designed to address the shortcomings of their predecessors, in particular related to radiation hardness and cross talk, and further improve upon their performance. The latest measurements with LF-Monopix1 and TJ-Monopix1 concerning hit efficiency, depletion, and radiation hardness as well as the initial test results of the new Monopix2 prototypes are presented.
The MALTA monolithic silicon pixel sensors have been used to study dicing and thinning of monolithic silicon pixel detectors for large area and low mass modules. Dicing as close as possible to the ...active circuitry will allow to build modules with very narrow inactive regions between the sensors. Inactive edge regions of less than 5μ m to the electronic circuitry could be achieved for 100μm thick sensors. The MALTA chip (Cardella et al., 2019) also offers the possibility to transfer data and power directly from chip to chip. Tests have been carried out connecting two MALTA chips directly using ultrasonic wedge wire bonding. Results from lab tests show that the data accumulated in one chip can be transferred via the second chip to the readout system, without the need of a flexible circuit to route the signals. The concept of chip to chip data and power transfer to achieve low mass modules has also been studied on prototype wafers using Cu-stud interconnection bridges. First results are presented, outlining technical challenges and possible future steps to achieve a low mass large area monolithic pixel sensor module.
Abstract
A monolithic silicon pixel detector prototype has been
produced in the SiGe BiCMOS SG13G2 130 nm node technology by
IHP. The ASIC contains a matrix of hexagonal pixels with pitch of
...approximately 100 μm. Three analog pixels were calibrated in
laboratory with radioactive sources and tested in a 180 GeV/c pion
beamline at the CERN SPS. A detection efficiency of
(99.9
-0.2
+0.1
)% was measured together with a time
resolution of (36.4 ± 0.8) ps at the highest preamplifier bias
current working point of 150 μA and at a sensor bias voltage
of 160 V. The ASIC was also characterized at lower bias voltage and
preamplifier current.
Abstract
This paper presents a small-area monolithic pixel detector
ASIC designed in 130 nm SiGe BiCMOS technology for the upgrade of
the pre-shower detector of the FASER experiment at CERN. The ...purpose
of this prototype is to study the integration of fast front-end
electronics inside the sensitive area of the pixels and to identify
the configuration that could satisfy at best the specifications of
the experiment. Self-induced noise, instabilities and cross-talk
were minimised to cope with the several challenges associated to the
integration of pre-amplifiers and discriminators inside the pixels.
The methodology used in the characterisation and the design choices
will also be described. Two of the variants studied here will be
implemented in the pre-production ASIC of the FASER experiment
pre-shower for further tests.
Depleted Monolithic Active Pixel Sensors (DMAPS) constitute a promising low cost alternative for the outer layers of the ATLAS experiment Inner Tracker (ITk). Realizations in modern, high resistivity ...CMOS technologies enhance their radiation tolerance by achieving substantial depletion of the sensing volume. Two DMAPS prototypes that use the same “column-drain” readout architecture and are based on different sensor implementation concepts named LF-Monopix and TJ-Monopix have been developed for the High Luminosity upgrade of the Large Hadron Collider (HL-LHC).
LF-Monopix was fabricated in the LFoundry 150 nm technology and features pixel size of 50×250μm2 and large collection electrode opted for high radiation tolerance. Detection efficiency up to 99% has been measured after irradiation to 1⋅1015neq∕cm2. TJ-Monopix is a large scale (1×2cm2) prototype featuring pixels of 36×40μm2 size. It was fabricated in a novel TowerJazz 180 nm modified process that enables full depletion of the sensitive layer, while employing a small collection electrode that is less sensitive to crosstalk. The resulting small sensor capacitance (≤3 fF) is exploited by a compact, low power front end optimized to meet the 25 ns timing requirement. Measurement results demonstrate the sensor performance in terms of Equivalent Noise Charge (ENC) ≈11e−, threshold ≈300e−, threshold dispersion ≈30e− and total power consumption lower than 120 mW/cm2.
•Depleted monolithic pixel sensors developed for the ATLAS ITk.•Different implemenation concepts featuring large and small collection electrodes.•Process modification to combine small capacitance with enhanced radiation tolerance.•Full functionality after irradiation.•High efficiency (LF-Monopix), High analog performance (TJ-Monopix).
Measurement results of the MALTA monolithic pixel detector Schioppa, E.J.; Asensi Tortajada, I.; Berdalovic, I. ...
Nuclear instruments & methods in physics research. Section A, Accelerators, spectrometers, detectors and associated equipment,
04/2020, Letnik:
958
Journal Article
Recenzirano
MALTA is a full scale monolithic pixel detector implemented in TowerJazz 180 nm CMOS technology. The small pixel electrode allowed for the implementation of a fast, low noise and low power front-end, ...which is sensitive to the charge released by ionizing radiation in a 20–25 μm deep depleted region. The novel asynchronous matrix architecture is designed to ensure low power consumption and high rate capability. Such features make MALTA a possible candidate for the outer layer of ATLAS Inner Tracker (ITk) upgrade. Unirradiated and irradiated MALTA sensors have been extensively tested in laboratory and with high energy particle beams. Results of this measurements campaign are shown, and the further improvements that are being implemented in the next versions of the chip are discussed.