The exploitation of highly efficient carbon dioxide reduction (CO2RR) electrocatalyst for methane (CH4) electrosynthesis has attracted great attention for the intermittent renewable electricity ...storage but remains challenging. Here, N‐heterocyclic carbene (NHC)‐ligated copper single atom site (Cu SAS) embedded in metal–organic framework is reported (2Bn‐Cu@UiO‐67), which can achieve an outstanding Faradaic efficiency (FE) of 81 % for the CO2 reduction to CH4 at −1.5 V vs. RHE with a current density of 420 mA cm−2. The CH4 FE of our catalyst remains above 70 % within a wide potential range and achieves an unprecedented turnover frequency (TOF) of 16.3 s−1. The σ donation of NHC enriches the surface electron density of Cu SAS and promotes the preferential adsorption of CHO* intermediates. The porosity of the catalyst facilitates the diffusion of CO2 to 2Bn‐Cu, significantly increasing the availability of each catalytic center.
A catalyst with N‐heterocyclic carbene‐ligated Cu SAS as the active site, accompanied by many micro‐nano reactors, synergistically promotes the electrochemical synthesis of methane.
2D ferroelectric material has emerged as an attractive building block for high‐density data storage nanodevices. Although monolayer van der Waals ferroelectrics have been theoretically predicted, a ...key experimental breakthrough for such calculations is still not realized. Here, hexagonally stacking α‐In2Se3 nanoflake, a rarely studied van der Waals polymorph, is reported to exhibit out‐of‐plane (OOP) and in‐plane (IP) ferroelectricity at room temperature. Ferroelectric multidomain states in a hexagonal α‐In2Se3 nanoflake with uniform thickness can survive to 6 nm. Most strikingly, the electric‐field‐induced polarization switching and hysteresis loop are, respectively, observed down to the bilayer and monolayer (≈1.2 nm) thicknesses, which designates it as the thinnest layered ferroelectric and verifies the corresponding theoretical calculation. In addition, two types of ferroelectric nanodevices employing the OOP and IP polarizations in 2H α‐In2Se3 are developed, which are applicable for nonvolatile memories and heterostructure‐based nanoelectronics/optoelectronics.
The thinnest layered ferroelectric is demonstrated for the first time at room temperature. The semiconducting hexagonal α‐In2Se3 nanoflakes exhibit out‐of‐plane and in‐plane ferroelectricity that are closely intercorrelated. The polarization switching and hysteresis loops can be realized in the thickness as thin as ≈2.3 nm (bilayer) and ≈1.2 nm (monolayer). Two types of ferroelectric switchable devices are proposed to show the potential application in nonvolatile memories.
Semitransparent organic photovoltaics (ST‐OPVs) have great potential for use in renewable energy technologies. In bulk‐heterojunction (BHJ) ST‐OPVs, a compromise is necessary between the visible ...light transmittance (VLT) and the power conversion efficiency (PCE). A sequential deposition (SD) strategy that involves individually depositing a polymer donor layer (D) and a small‐molecule acceptor layer (A) as the active layer is presented; where molecular diffusion occurring at the interfacial region results in a pseudo p–i–n structure. PBDB‐T‐2F(D)/Y6(A) ST‐OPVs are fabricated with different active layer thicknesses—at 115 nm, the SD (D:A/75:40 nm) and BHJ devices (D:A/1:1.2 w) provide the champion PCE of 12.91% (VLT of 14.5%) and 12.77% (VLT of 13.4%), respectively; at 85 nm, the SD (D:A/45:40 nm) and BHJ devices (D:A/1:1.2 w) provide a PCE of 12.22% (VLT of 22.2%) and 11.23% (VLT of 16.6%), respectively. This trend indicates SD devices have larger PCE and VLT values than the BHJ devices at a given active layer thickness, and the enhancements of PCE and VLT values by the SD structures against the BHJ structures become more pronounced as the active layer thickness reduced. The SD strategy provides a new approach for achieving ST‐OPVs with both high efficiency and high transparency.
In typical semitransparent organic photovoltaics (ST‐OPVs) that incorporate bulk heterojunction (BHJ) active layers, a compromise is made between the visible light transmittance (VLT) and power conversion efficiency (PCE). A new strategy with a sequential‐deposition (SD) active layer involving pseudo p–i–n structures provides ST‐OPVs with simultaneously higher PCE and VLT than that of the BHJ devices at the same layer thickness.
Neuromorphic computing has been extensively studied to mimic the brain functions of perception, learning, and memory because it may overcome the von Neumann bottleneck. Here, with the light‐induced ...bidirectional photoresponse of the proposed Bi2O2Se/graphene hybrid structure, its potential use in next‐generation neuromorphic hardware is examined with three distinct optoelectronic applications. First, a photodetector based on a Bi2O2Se/graphene hybrid structure presents positive and negative photoresponsibility of 88 and −110 A W−1 achieved by the excitation of visible wavelength and ultraviolet wavelength light at intensities of 1.2 and 0.3 mW cm−2, respectively. Second, this unique photoresponse contributes to the realization of all optically stimulated long‐term potentiation or long‐term depression to mimic synaptic short‐term plasticity and long‐term plasticity, which are attributed to the combined effect of photoconductivity, bolometric, and photoinduced desorption. Third, the devices are applied to perform digital logic functions, such as “AND” and “OR,” using full light modulation. The proposed Bi2O2Se/graphene‐based optoelectronic device represents an innovative and efficient building block for the development of future multifunctional artificial neuromorphic systems.
All‐optical synapses based on a 2D Bi2O2Se/graphene hybrid structure can yield positive photoresponses under visible light and negative photoresponses under 365 nm illumination without the extra electrical control. Contributing to this unique optoelectronic property, the single two‐terminal device with fully optical operations is demonstrated for the photodetector, optoelectronic synapses, and optical logic functions.
Ultrathin two-dimensional (2D) semiconducting layered materials offer great potential for extending Moore's law of the number of transistors in an integrated circuit
. One key challenge with 2D ...semiconductors is to avoid the formation of charge scattering and trap sites from adjacent dielectrics. An insulating van der Waals layer of hexagonal boron nitride (hBN) provides an excellent interface dielectric, efficiently reducing charge scattering
. Recent studies have shown the growth of single-crystal hBN films on molten gold surfaces
or bulk copper foils
. However, the use of molten gold is not favoured by industry, owing to its high cost, cross-contamination and potential issues of process control and scalability. Copper foils might be suitable for roll-to-roll processes, but are unlikely to be compatible with advanced microelectronic fabrication on wafers. Thus, a reliable way of growing single-crystal hBN films directly on wafers would contribute to the broad adoption of 2D layered materials in industry. Previous attempts to grow hBN monolayers on Cu (111) metals have failed to achieve mono-orientation, resulting in unwanted grain boundaries when the layers merge into films
. Growing single-crystal hBN on such high-symmetry surface planes as Cu (111)
is widely believed to be impossible, even in theory. Nonetheless, here we report the successful epitaxial growth of single-crystal hBN monolayers on a Cu (111) thin film across a two-inch c-plane sapphire wafer. This surprising result is corroborated by our first-principles calculations, suggesting that the epitaxial growth is enhanced by lateral docking of hBN to Cu (111) steps, ensuring the mono-orientation of hBN monolayers. The obtained single-crystal hBN, incorporated as an interface layer between molybdenum disulfide and hafnium dioxide in a bottom-gate configuration, enhanced the electrical performance of transistors. This reliable approach to producing wafer-scale single-crystal hBN paves the way to future 2D electronics.
Conventional ion batteries utilizing metallic ions as the single charge carriers are limited by the insufficient abundance of metal resources. Although supercapacitors apply both cations and anions ...to store energy through absorption and/or Faradic reactions occurring at the interfaces of the electrode/electrolyte, the inherent low energy density hinders its application. The graphite‐cathode‐based dual‐ion battery possesses a higher energy density due to its high working potential of nearly 5 V. However, such a battery configuration suffers from severe electrolyte decomposition and exfoliation of the graphite cathode, rendering an inferior cycle life. Herein, a new surface‐modification strategy is developed to protect the graphite cathode from the anion salvation effect and the deposition derived from electrolyte decomposition by generating an artificial solid electrolyte interphase (SEI). Such SEI‐modified graphite exhibits superior cycling stability with 96% capacity retention after 500 cycles under 200 mA g−1 at the upper cutoff voltage of 5.0 V, which is much improved compared with the pristine graphite electrode. Through several ex situ studies, it is revealed that the artificial SEI greatly stabilizes the interfaces of the electrode/electrolyte after reconstruction and gradual establishment of the optimal anion‐transport path. The findings shed light on a new avenue toward promoting the performance of the dual‐ion battery (DIB) and hence to make it practical finally.
An artificial layer of a solid electrolyte interphase is fabricated on a graphite cathode for a dual‐ion battery (DIB). Such surface modification can alleviate the electrolyte decomposition at the high working voltage of the anion de‐/intercalation processes and the solvation effect of anions, much improving the cycling stability of the Li//graphite DIB.
Palladium diselenide (PdSe2), a peculiar noble metal dichalcogenide, has emerged as a new two-dimensional material with high predicted carrier mobility and a widely tunable band gap for device ...applications. The inherent in-plane anisotropy endowed by the pentagonal structure further renders PdSe2 promising for novel electronic, photonic, and thermoelectric applications. However, the direct synthesis of few-layer PdSe2 is still challenging and rarely reported. Here, we demonstrate that few-layer, single-crystal PdSe2 flakes can be synthesized at a relatively low growth temperature (300 °C) on sapphire substrates using low-pressure chemical vapor deposition (CVD). The well-defined rectangular domain shape and precisely determined layer number of the CVD-grown PdSe2 enable us to investigate their layer-dependent and in-plane anisotropic properties. The experimentally determined layer-dependent band gap shrinkage combined with first-principle calculations suggest that the interlayer interaction is weaker in few-layer PdSe2 in comparison with that in bulk crystals. Field-effect transistors based on the CVD-grown PdSe2 also show performances comparable to those based on exfoliated samples. The low-temperature synthesis method reported here provides a feasible approach to fabricate high-quality few-layer PdSe2 for device applications.
Abstract
Van der Waals heterobilayers of transition metal dichalcogenides with spin–valley coupling of carriers in different layers have emerged as a new platform for exploring spin/valleytronic ...applications. The interlayer coupling was predicted to exhibit subtle changes with the interlayer atomic registry. Manually stacked heterobilayers, however, are incommensurate with the inevitable interlayer twist and/or lattice mismatch, where the properties associated with atomic registry are difficult to access by optical means. Here, we unveil the distinct polarization properties of valley-specific interlayer excitons using epitaxially grown, commensurate WSe
2
/MoSe
2
heterobilayers with well-defined (AA and AB) atomic registry. We observe circularly polarized photoluminescence from interlayer excitons, but with a helicity opposite to the optical excitation. The negative circular polarization arises from the quantum interference imposed by interlayer atomic registry, giving rise to distinct polarization selection rules for interlayer excitons. Using selective excitation schemes, we demonstrate the optical addressability for interlayer excitons with different valley configurations and polarization helicities.
A nanolaser is a key component for on-chip optical communications and computing systems. Here, we report on the low-threshold, continuous-wave operation of a subdiffraction nanolaser based on surface ...plasmon amplification by stimulated emission of radiation. The plasmonic nanocavity is formed between an atomically smooth epitaxial silver film and a single optically pumped nanorod consisting of an epitaxial gallium nitride shell and an indium gallium nitride core acting as gain medium. The atomic smoothness of the metallic film is crucial for reducing the modal volume and plasmonic losses. Bimodal lasing with similar pumping thresholds was experimentally observed, and polarization properties of the two modes were used to unambiguously identify them with theoretically predicted modes. The all-epitaxial approach opens a scalable platform for low-loss, active nanoplasmonics.
International Biological Flora: Ginkgo biloba Lin, Han‐Yang; Li, Wen‐Hao; Lin, Chen‐Feng ...
The Journal of ecology,
April 2022, 2022-04-00, 20220401, Letnik:
110, Številka:
4
Journal Article
Recenzirano
Odprti dostop
This account presents information on all aspects of the biology of Ginkgo biloba L. (Ginkgo, Maidenhair tree) that are relevant to understanding its ecological characteristics. The main topics are ...presented within the standard framework of the International Biological Flora: distribution, habitat, communities, responses to biotic factors, responses to environment, structure and physiology, phenology, reproductive and seed characters, herbivores and disease, history, conservation and global heterogeneity.
Globally, Ginkgo survives a wide range of mean annual temperature (−3.3 to 23.3°C) and annual precipitation (34–3925 mm) conditions, according to a meta‐analysis. It prefers a warm, humid, open‐canopy and a well‐drained environment. The species shows strong tolerance to drought, freezing, fire, air pollution, heavy metals and low‐level salt, whereas it is intolerant to long‐time shade and waterlogging. Six Ginkgo trees even survived the atom bomb in Hiroshima, Japan, during World War II.
Ginkgo is susceptible to few diseases. Those occurring in nursery seedlings and juvenile trees involve stem rot and leaf blight. The former is caused by Macrophomina phaseoli, which could lead to a mortality rate of 5%–12% (up to 31.8%) for seedlings. This disease can be mitigated by a 4‐h shading treatment and applying organic fertilisers. The pathogens inducing leaf blight include Alternaria alternata, Colletotrichum gloeosporioides and Pestalotia ginkgo, which may infect 100% juvenile trees in some regions. The application of 45% carbendazim or 50% Tuzet can effectively prevent leaf blight.
Ginkgo biloba is one of the world’s most distinctive trees with an important position in plant evolution and human society. It is a tall deciduous dioecious tree native to China. Refugial populations were identified in three glacial refugia located in eastern, southern and south‐western China, respectively, with a patchy distribution pattern and a small population size. It typically grows along flood‐disturbed streamsides in warm‐temperate deciduous (and evergreen mixed) broadleaved forests. Ginkgo may have been introduced repeatedly out of China since the sixth century. It has been planted as a landscape tree world‐wide, except in Antarctica. Ginkgo is also of great value for edible nuts, herbal medicine, religion and art. It is a natural and cultural symbol of China.
摘要
本文系统总结了活化石树种银杏(Ginkgo biloba L.)的生物学和生态学特性。根据本刊“国际生物学植物志”的标准框架，我们从以下十一个方面进行了全面描述:分布、生境、群落、生物响应、环境响应、结构与生理、物候、繁殖和种子特征、植食动物与疾病、进化历史、保护、全球异质性。
银杏具有突出的环境适应性和抗逆性。荟萃分析表明，银杏可适应变异范围极广的年均温(−3.3 至 23.3 °C)和年降水量(34至3925 mm)环境，但喜温暖、湿润、郁闭度低、排水状况良好的生境。银杏对干旱、霜冻、火、大气污染、重金属和低浓度的盐分具较强的耐受性，但不耐受长时间荫蔽和水淹。日本广岛市的六株银杏甚至经历第二次世界大战原子弹轰炸后仍存活至今。
银杏也具很强的抗病性。大树病害极少，在幼苗和幼树中仅发现茎腐病和叶枯病。茎腐病由菜豆壳球孢(Macrophomina phaseoli)引起，幼苗致死率为5%–12%(最高达31.8%)，4小时遮荫处理外加施用有机肥可有效减轻症状。叶枯病的病原菌包括链格孢(Alternaria alternata)、盘长孢状刺盘孢(Colletotrichum gloeosporioides)和银杏盘多毛孢(Pestalotia ginkgo)。某些地区幼树的叶枯病发病率可达100%，但喷洒45%多菌灵或50%退菌特可有效预防叶枯病。
作为全世界最独特的树种之一，银杏在植物进化和人类社会中扮演着重要角色。这种高大落叶乔木雌雄异株，原产中国，共有三处冰期避难所，分别位于华东、西南和华南。避难所种群分布零散，且种群大小较小。在暖温带落叶阔叶林和常绿落叶阔叶混交林中，常分布于沟谷两侧。自公元六世纪以来，银杏不断被引种至中国之外的世界各地，作为一种景观树种，目前银杏被栽培于除南极洲外的其余六大洲。它还具有很高的食用、药用、宗教和艺术价值。银杏是中国的自然和文化符号之一。
The living fossil Ginkgo biloba is one of the world’s most distinctive trees with an important position in plant evolution and human society. It is a tall deciduous dioecious tree with masses of golden fan‐shaped leaves in autumn. It grows world‐wide except in Antarctica and even survived the atomic bombing of Hiroshima. The extreme longevity of over 1000 years results in part from its prominent tolerance and resistance to both biotic and abiotic stresses as well as from outstanding regeneration potential due to sprouts, suckers or air roots. Refugial and natural populations still persist along flood‐disturbed streamsides in subtropical China.
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