Graphene, a single atomic layer of graphitic carbon, has attracted intense attention because of its extraordinary properties that make it a suitable material for a wide range of technological ...applications. Large-area graphene films, which are necessary for industrial applications, are typically polycrystalline - that is, composed of single-crystalline grains of varying orientation joined by grain boundaries. Here, we present a review of the large body of research reported in the past few years on polycrystalline graphene. We discuss its growth and formation, the microscopic structure of grain boundaries and their relations to other types of topological defect such as dislocations. The Review further covers electronic transport, optical and mechanical properties pertaining to the characterizations of grain boundaries, and applications of polycrystalline graphene. We also discuss research, still in its infancy, performed on other two-dimensional materials such as transition metal dichalcogenides, and offer perspectives for future directions of research.
We have used molecular dynamics to calculate the thermal conductivity of symmetric and asymmetric graphene nanoribbons (GNRs) of several nanometers in size (up to ∼4 nm wide and ∼10 nm long). For ...symmetric nanoribbons, the calculated thermal conductivity (e.g., ∼2000 W/m-K at 400 K for a 1.5 nm × 5.7 nm zigzag GNR) is on the similar order of magnitude of the experimentally measured value for graphene. We have investigated the effects of edge chirality and found that nanoribbons with zigzag edges have appreciably larger thermal conductivity than nanoribbons with armchair edges. For asymmetric nanoribbons, we have found significant thermal rectification. Among various triangularly shaped GNRs we investigated, the GNR with armchair bottom edge and a vertex angle of 30° gives the maximal thermal rectification. We also studied the effect of defects and found that vacancies and edge roughness in the nanoribbons can significantly decrease the thermal conductivity. However, substantial thermal rectification is observed even in the presence of edge roughness.
Topological insulators are a novel class of quantum matter with a gapped insulating bulk, yet gapless spin-helical Dirac fermion conducting surface states. Here, we report local and non-local ...electrical and magneto transport measurements in dual-gated BiSbTeSe2 thin film topological insulator devices, with conduction dominated by the spatially separated top and bottom surfaces, each hosting a single species of Dirac fermions with independent gate control over the carrier type and density. We observe many intriguing quantum transport phenomena in such a fully tunable two-species topological Dirac gas, including a zero-magnetic-field minimum conductivity close to twice the conductance quantum at the double Dirac point, a series of ambipolar two-component half-integer Dirac quantum Hall states and an electron-hole total filling factor zero state (with a zero-Hall plateau), exhibiting dissipationless (chiral) and dissipative (non-chiral) edge conduction, respectively. Such a system paves the way to explore rich physics, ranging from topological magnetoelectric effects to exciton condensation.
The spin-helical Dirac fermion topological surface states in a topological insulator nanowire or nanoribbon promise novel topological devices and exotic physics such as Majorana fermions. Here, we ...report local and non-local transport measurements in Bi2Te3 topological insulator nanoribbons that exhibit quasi-ballistic transport over ∼2 μm. The conductance versus axial magnetic flux Φ exhibits Aharonov-Bohm oscillations with maxima occurring alternately at half-integer or integer flux quanta (Φ0 = h/e, where h is Planck's constant and e is the electron charge) depending periodically on the gate-tuned Fermi wavevector (kF) with period 2π/C (where C is the nanoribbon circumference). The conductance versus gate voltage also exhibits kF-periodic oscillations, anti-correlated between Φ = 0 and Φ0/2. These oscillations enable us to probe the Bi2Te3 band structure, and are consistent with the circumferentially quantized topological surface states forming a series of one-dimensional subbands, which undergo periodic magnetic field-induced topological transitions with the disappearance/appearance of the gapless Dirac point with a one-dimensional spin helical mode.
A three-dimensional (3D) topological insulator (TI) is a quantum state of matter with a gapped insulating bulk yet a conducting surface hosting topologically protected gapless surface states. One of ...the most distinct electronic transport signatures predicted for such topological surface states (TSS) is a well-dened half-integer quantum Hall eect (QHE) in a magnetic eld, where the surface Hall conductivities become quantized in units of (1/2)e2/h (e being the electron charge, h the Planck constant) concomitant with vanishing resistance. Here, we observe a well-developed QHE arising from TSS in an intrinsic TI of BiSbTeSe2. Our samples exhibit surface-dominated conduction even close to room temperature, whereas the bulk conduction is negligible. At low temperatures and high magnetic elds perpendicular to the top and bottom surfaces, we observe well-developed integer quantized Hall plateaux, where the two parallel surfaces each contribute a half-integer e2/h quantized Hall conductance, accompanied by vanishing longitudinal resistance. When the bottom surface is gated to match the top surface in carrier density, only odd integer QH plateaux are observed, representing a half-integer QHE of two degenerate Dirac gases. This system provides an excellent platform to pursue a plethora of exotic physics and novel device applications predicted for TIs, ranging from magnetic monopoles and Majorana particles to dissipationless electronics and fault-tolerant quantum computers.
The recently discovered spin defects in hexagonal boron nitride (hBN), a layered van der Waals material, have great potential in quantum sensing. However, the photoluminescence and the contrast of ...the optically detected magnetic resonance (ODMR) of hBN spin defects are relatively low so far, which limits their sensitivity. Here we report a record-high ODMR contrast of 46% at room temperature and simultaneous enhancement of the photoluminescence of hBN spin defects by up to 17-fold by the surface plasmon of a gold film microwave waveguide. Our results are obtained with shallow boron vacancy spin defects in hBN nanosheets created by low-energy He+ ion implantation and a gold film microwave waveguide fabricated by photolithography. We also explore the effects of microwave and laser powers on the ODMR and improve the sensitivity of hBN spin defects for magnetic field detection. Our results support the promising potential of hBN spin defects for nanoscale quantum sensing.
Topological insulators (TIs) are an unusual phase of quantum matter with nontrivial spin-momentum-locked topological surface states (TSS). The electrical detection of spin-momentum-locking of TSS has ...been lacking till very recently. Many of the results are from samples with significant bulk conduction, such as Bi2Se3, where it can be challenging to separate the surface and bulk contribution to the spin signal. Here, we report spin potentiometric measurements in flakes exfoliated from bulk insulating Bi2Te2Se crystals, using two outside nonmagnetic contacts for driving a DC spin helical current and a middle ferromagnetic (FM)-Al2O3 contact for detecting spin polarization. The voltage measured by the FM electrode exhibits a hysteretic step-like change when sweeping an in-plane magnetic field between opposite directions along the easy axis of the FM contact. Importantly, the direction of the voltage change can be reversed by reversing the direction of current, and the amplitude of the change as measured by the difference in the detector voltage between opposite FM magnetization increases linearly with increasing current, consistent with the current-induced spin polarization of spin-momentum-locked TSS. Our work directly demonstrates the electrical injection and detection of spin polarization in TI and may enable utilization of TSS for applications in nanoelectronics and spintronics.
We show that thermal rectification (TR) in asymmetric graphene nanoribbons (GNRs) is originated from phonon confinement in the lateral dimension, which is a fundamentally new mechanism different from ...that in macroscopic heterojunctions. Our molecular dynamics simulations reveal that, though TR is significant in nanosized asymmetric GNRs, it diminishes at larger width. By solving the heat diffusion equation, we prove that TR is indeed absent in both the total heat transfer rate and local heat flux for bulk-size asymmetric single materials, regardless of the device geometry or the anisotropy of the thermal conductivity. For a deeper understanding of why lateral confinement is needed, we have performed phonon spectra analysis and shown that phonon lateral confinement can enable three possible mechanisms for TR: phonon spectra overlap, inseparable dependence of thermal conductivity on temperature and space, and phonon edge localization, which are essentially related to each other in a complicated manner. Under such guidance, we demonstrate that other asymmetric nanostructures, such as asymmetric nanowires, thin films, and quantum dots, of a single material are potentially high-performance thermal rectifiers.
Strain engineering is a promising way to tune the electrical, electrochemical, magnetic, and optical properties of 2D materials, with the potential to achieve high‐performance 2D‐material‐based ...devices ultimately. This review discusses the experimental and theoretical results from recent advances in the strain engineering of 2D materials. Some novel methods to induce strain are summarized and then the tunable electrical and optical/optoelectronic properties of 2D materials via strain engineering are highlighted, including particularly the previously less‐discussed strain tuning of superconducting, magnetic, and electrochemical properties. Also, future perspectives of strain engineering are given for its potential applications in functional devices. The state of the survey presents the ever‐increasing advantages and popularity of strain engineering for tuning properties of 2D materials. Suggestions and insights for further research and applications in optical, electronic, and spintronic devices are provided.
Recently reported new methods to induce strain are summarized and discussed, and the latest developments on the modification of electrical, magnetic, and optical properties of 2D materials are updated by strain engineering (in particular properties such as the electrochemical, magnetic and superconducting characteristics, and their strain tuning have received little attention previously), and future perspectives are presented.
Recently, aluminum ion batteries (AIBs) have attracted more attention due to the reliable, cost-effective, and air-stable Al metal anode. Among various cathode materials of AIBs, graphite was paid ...more attention owing to its high-voltage plateau and stable properties in storing chloroaluminate anions (AlCl 4 − ). However, its low capacity limits the real application and can not satisfy the requirements of modern society. To solve the above issue, herein, boron (B)-doping expanded graphite (B-EG) was prepared by thermal treatment of expanded graphite and boric acid together in a reduction atmosphere. Based on the structural and electrochemical characterization, the results show that B-doping amplifies the interlayer space of expanded graphite (EG), introduces more mesoporous structures, and induces electron deficiency, which is beneficial to accelerating the transfer and adsorption of active ions. The results indicate that the B-EG electrode exhibits excellent rate capability and a high specific capacity of 84.9 mA h g −1 at 500 mA g −1 . Compared with the EG electrode, B-EG shows better cycle stability with the specific capacity of 87.7 mA h g −1 after 300 cycles, which could be attributed to lower pulverization and higher pseudo-capacitance contribution of B-EG after the introduction of B species.
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