Materials
In this study, we provided a simple method to extract the silicate species from the waste silica‐containing molding compounds from the semiconducting industry.
Methods
Recycled sodium ...silicate solution was obtained from alkaline extraction of the silica fillers in the waste molding compounds and dried and redissolved in appropriate amount of water.
Results
Porous silica of high surface area (>500 m2g−1) and tunable pore size (1.5–5.0 nm) could be feasibly synthesized by using the recycled sodium silicate as silica source and nature‐friendly homopolymer polyethylene glycol (PEG) as an organic template. The pore size of the PEG‐templating silicas was made tunable by hydrothermal treatment at different pH.
Conclusion
To reduce the emission of CO2 gas from the removal of the PEG template, porous silica with a large surface area has been prepared at a low PEG/sodium silicate weight ratio of 1/20.
This study extracted silicate species from waste silica‐containing molding compounds in the semiconductor industry. Using this recycled sodium silicate as the silica source and eco‐friendly polyethylene glycol (PEG) as an organic template, porous silica with a high surface area (>500 m2g−1) and adjustable pore size (1.5–5.0 nm) can be synthesized.
The present article investigated the performance and corrosion behavior between Ag alloy wire bond and Al pad under molding compounds of different chlorine contents. The epoxy molding compounds ...(EMCs) were categorized as ultra-high chlorine, high chlorine and low chlorine, respectively, with 18.3 and 4.1 ppm chlorine contents. The ball bonds were stressed under 130°C/85%RH with biased voltage of 10V. The interfacial evolution between Ag alloy wire bond and Al pad was investigated in EMC of three chlorine contents after the biased-HAST test. The Ag bonding wires used in the plastic ball grid array (PBGA) package include low Ag wire (89wt%) and high Ag alloy wire (97wt%). The as bonded wire bond exhibits an average Ag-Al IMC thickness of ~0.56 μm in both types of Ag alloy wire. Two Cu-Al IMC layers, AgAl 2 and Ag 4 Al, analyzed by EDX were formed after 96h of biased-HAST test. The joint failed in 96h and 480h, respectively, under high chlorine content EMC. The joint lasts longer than 1056h with low chlorine content EMC. The corrosion of IMC formed between Ag alloy wire and Al pad, occurs in the high Ag content alloy wire. The results of EDX analysis indicate that the chlorine ion diffuses from molding compound to IMC through the crack formed between IMC and Al pad. Al 2 O 3 was formed within the IMC layer. It is believed the existence of Al 2 O 3 accelerates the penetration of the chlorine ion and thus the corrosion.
The present article investigated the performance and interfacial behavior between Cu wire bond and Al pad under molding compounds of different chlorine contents. The epoxy molding compounds (EMCs) ...were categorized as ultra-high chlorine, high chlorine and low chlorine, respectively, with 24, 7.6, and 4.3 ppm chlorine contents. The ball bonds were stressed under 130°C/85%RH with biased voltage of 10V. The interfacial evolution between Cu wire bond and Al pad was investigated in EMC of three chlorine contents after the biased-HAST test. The Cu bonding wires used in the plastic ball grid array (PBGA) package include bare Cu wire (4N Cu) and Pd coated Cu alloy wire (98Cu2Pd). The as bonded wire bond exhibits an average Cu-Al DV1C thickness of ~0.12 um in both types of Cu wire. Two Cu-Al IMC layers, Cu 9 Al 4 and CuAl 2 , analyzed by EDX were formed after 100h of biased-HAST test. The joint failed in 192h and 1296h, respectively, under ultra-high and high chlorine content EMC. The joint lasts longer than 2000h with low chlorine content EMC. The corrosion of IMC formed between Cu wire and Al pad, occurs in the ultra-high and high chlorine molding compound. The results of EDX analysis indicate that the chlorine ion diffuses from molding compound to DVIC through the crack formed between IMC and Al pad. Al 2 O 3 was formed within the DVIC layer. It is believed the existence of Al 2 O 3 accelerates the penetration of the chlorine ion and thus the corrosion.
Abstract
Materials
In this study, we provided a simple method to extract the silicate species from the waste silica‐containing molding compounds from the semiconducting industry.
Methods
Recycled ...sodium silicate solution was obtained from alkaline extraction of the silica fillers in the waste molding compounds and dried and redissolved in appropriate amount of water.
Results
Porous silica of high surface area (>500 m
2
g
−1
) and tunable pore size (1.5–5.0 nm) could be feasibly synthesized by using the recycled sodium silicate as silica source and nature‐friendly homopolymer polyethylene glycol (PEG) as an organic template. The pore size of the PEG‐templating silicas was made tunable by hydrothermal treatment at different pH.
Conclusion
To reduce the emission of CO
2
gas from the removal of the PEG template, porous silica with a large surface area has been prepared at a low PEG/sodium silicate weight ratio of 1/20.
In this paper, a mass production solution of integrated passive device utilized on radio frequency communication systems was proposed through a glass panel platform where the size could be up to 408 ...mm * 512 mm and provided 1-layer capacitor and 1-layer inductor for IPD design. The structure characterization of panel-based IPD was performed as well as the electrical stability and RF functional test were evaluated to show the capability reference for further applications. The panel-based process could also provide a cost effective solution on emerging production.
Development of new photoresist stripping agent Ching-Yi Chu; Te-Jung Hsu; Tzu-Hsing Chiang ...
2014 9th International Microsystems, Packaging, Assembly and Circuits Technology Conference (IMPACT),
2014-Oct.
Conference Proceeding
Optical lithography is one of the most extensively used technologies in the fabrication of a printed circuit board (PCB) or a semiconductor device. In recent years, as the demand for smaller sized ...electronic appliances increases and the cost of the stripping agents keeps escalating, higher standard and requirement on existing photoresist stripping technology is demanded for the semiconductor industry. In conventional techniques, photoresists can be removed by simple hydroxides based stripping agents. Proprietary stripping agents which are predominantly based on amine chemistry have attracted much attention because of their proven ability to make the photoresist film particulate into small features thus to show faster and improved stripping efficiency. However, the photoresist stripping ability of known stripping agents is insufficient to tackle the newly developed fine process and short time treatment in the production of semiconductor devices and liquid crystal display panels. Moreover, these known stripping agents are reported to show negative effect on the PCB production process with problems such as high metal corrosion rates which can lead to tin transfer and etch retardation. Therefore, it has been a high demand for further improvement of the stripping ability. Up to date, the stripping agents we used are capable of dry films removal processes within a short period of time. However, the existing stripping agents are not powerful enough to clean the liquid photoresists efficiently. The liquid photoresists removal process performs much worse with high level of residues which requires a second exposure and lead to unacceptable scrap rates after etching. Furthermore, corrosive attack on copper substrate by these existing stripping agent results in an uneven wire width after gold plating. In order to resolve such issues, development of the next generation of photoresist stripping agent which can be applied to both dry and wet film with minimal attack on the metal base is an urgent issue in the immediate future. In this paper, a photoresist stripping agent containing a combination of amine compounds in aqueous alkaline based solutions is proposed. By using this new photoresist stripping agent, the circuit appears to have been fully stripped of all dry film with increasing stripping rate and the production was increased by 60%. New product is also capable of completely removing the liquid photoresists without secondary processes, and the production was increased by 25%. The use of new formulation avoids any undesirable metal attack. In addition, the cost of the new formulation is much less than the existing stripping agent. With the advantages of lower cost, better stripping ability and increase of production rates, the new stripping agent is aimed to replace the older stripping agent in order to produce high quality product.
碩士
國立中山大學
環境工程研究所
93
This research was aimed to investigate the enhancement of electrokinetic (EK) remediation arsenate-contaminated soil by permeable reaction barrier (PRB). All experiments, which ...experimental parameters included the position, materials, and quantity of PRB, processing fluid types, potential gradients, and treatment time, were conducted in two types of EK systems. One was Pyrex glass cylindrical cells with dimension of 4.2 cm (ψ) × 12 cm (L) and the other was a small pilot-scale modulus with dimension of 36cm (L) ×18cm (W) ×18cm cm (H). The PRBs were composed of four kinds of reaction materials, which included commercial zero valent iron (Fe(0)C), manufactured zero valent iron (Fe(0)M), commercial hydrous ferric oxide (FeOOHC), and manufactured hydrous ferric oxide (FeOOHM), mixed with ottawa sand in a ratio of 1:2,respectively, and installed in the anode, middle, and cathode side of the EK systems.
For 5-day EK cylindrical cell tests, the results showed that the PRB installation would resul
