La communication est indispensable dans une société, quelle que soit la nature de son régime politique. Orale ou écrite, elle est un canal de transmission obligatoire pour informer les citoyens de la ...gestion des affaires publiques et offre la possibilité aux hommes politiques de déployer des stratégies de persuasion, imprégnées de valeurs et de symboles, afin d’obtenir le pouvoir ou de se maintenir au pouvoir. Mise au service du régime franquiste pendant plus de quarante ans, la communication...
Dans cette thèse, j’ai souhaité explorer la communication politique espagnole réactivée après plus de quarante ans de dictature et porter une attention particulière au nouveau schéma communicationnel ...que l’Espagne a dû se réinventer, en s’inspirant des pratiques marketing déjà ancrées chez ses homologues européens et américains. Encouragé par l’augmentation du nombre de convocations électorales, la prolifération des discours parlementaires et l’essor des moyens de communication de masse, un nouveau jeu de langage politique est né entre les acteurs de cette communication politique que sont les hommes politiques, les médias et l’opinion publique. Aussi, insérés dans un contexte socio-historique extrêmement riche, les discours politiques prononcés dans l’Espagne démocratique (1982-2008) par le PP et le PSOE en campagne ou hors campagne sont non seulement révélateurs de l’évolution d’une société démocratique en quête de construction et de reconnaissance sur la scène internationale ; ils marquent également la fin des clivages idéologiques. La diversité de mon corpus a cherché à lever le voile sur la nouvelle parole politique, tiraillée entre la transmission des idéologies et la politique spectacle. La première partie de ce travail de recherche jette les bases théoriques de la communication politique et du discours politique généralisables à toutes les démocraties occidentales, en centrant son attention sur le cas espagnol, qui a su adapter sa manière de communiquer et de produire des discours dans la sphère politique aux exigences contemporaines sous l’égide du marketing politique. La seconde partie interroge les spots électoraux émis par les deux partis majoritaires au cours des élections législatives de 1982 à 2008 du point de vue des stratégies discursives en portant une attention particulière à l’image. La troisième partie livre une analyse lexicale des discours d’investiture prononcés depuis 1982 par les chefs de gouvernement espagnols, étude complétée par une analyse du contenu qui met en exergue les caractéristiques de chacun d’entre eux et confronte chaque allocution au débat qui a opposé le candidat aspirant à la Moncloa au porte-parole de l’opposition.
In this thesis, I intend to investigate the Spanish means of political communication that have been reactivated after more than forty years of dictatorship, and to pay particular attention to the new communication strategy that Spain has had to reinvent, by drawing inspiration from marketing practices already well established in her European and American counterparts. Encouraged by the increase in the number of elections, the proliferation of parliamentary speeches and the development of mass media, a new kind of political language has come about between the political communicators who are the politicians, the media, and the public. Furthermore, set in an extremely rich socio-historic context, the political speeches delivered in democratic Spain (1982-2008) by the PP and the PSOE during or outside their campaigns not only deal with a society in transition to democracy and which is internationally recognised on the but they also mark the end of ideological splits. The variety of documents in my corpus aims at unveiling the new political vocabulary, pulled between conveying ideologies and « showbiz politics ». The first part of this research lays the foundations of political communication and political language that can be applied to all western democracies, focusing on the Spanish case which was able to adapt its way of communicating and producing speeches in the political sphere to the contemporary requirements under the aegis of political marketing. The second part questions t both major parties’ party political broadcast during the general elections from 1982 to 2008 from the strategic point of view of the speeches, by paying particular attention to images. Third part is a lexical analysis of nomination speeches since 1982 by successive Spanish heads of government. This study is completed by an analysis of the content of the speeches and compares every political commentary with the debate that set the candidate aspiring to the Moncloa against the opposition’s spokesman.
Heterogeneous integration of III-V materials onto silicon photonics has experienced enormous progress in the last few years, setting the groundwork for the implementation of complex on-chip optical ...systems that go beyond single device performance. Recent advances on the field are expected to impact the next generation of optical communications to attain low power, high efficiency and portable solutions. To accomplish this aim, intense research on hybrid lasers, modulators and photodetectors is being done to implement optical modules and photonic integrated networks with specifications that match the market demands. Similarly, important advances on packaging and thermal management of hybrid photonic integrated circuits (PICs) are currently in progress. In this paper, we report our latest results on hybrid III-V on Si transmitters, receivers and packaged optical modules for high-speed optical communications. In addition, a review of recent advances in this field will be provided for benchmarking purposes.
We demonstrate an ultra-fast athermal continuous wavelength-swept III-V-on-SOI MOSCAP DFB laser with a mode-hop-free-tuning up to 10 GHz in less than 2 ns. We also propose a new method to linearize ...the frequency response without any pre-distortion or active feedback in the gain's current injection ramp. Instead, we polarize the III-V gain Section under direct current injection, and we drive the hybrid MOSCAP waveguide with an AC voltage signal. By optimizing its driving frequency, we demonstrate an ultra-fast athermal triangular-shaped time-varying frequency tuning with a speed of <inline-formula> <tex-math notation="LaTeX">4\times 10 ^{4} </tex-math></inline-formula> PHz/s and a laser's frequency excursion of 4 GHz.
We demonstrate a heterogeneously integrated III-V-on-SOI distributed feedback laser with a low grating strength (κ < 40 cm
−1
) and a narrow linewidth of Δν = 118 kHz. The laser operates single mode ...with a side-mode suppression ratio over 45 dB, provides a single-sided waveguide-coupled output power of 22 mW (13.4 dBm) and has a wall-plug efficiency of 17%. The dynamic characteristics were also evaluated, obtaining an intrinsic 3 dB modulation bandwidth of 14 GHz and a photon lifetime of 8 ps. Large-signal intensity modulation using a 2
31
-1 PRBS pattern length revealed open eye diagrams up to 25 Gb/s and a penalty on the dynamic extinction ratio lower than 1 dB after transmission over a 2 km standard single mode optical fiber.
The tremendous demand for low-cost, low-consumption and high-capacity optical transmitters in data centers challenges the current InP-photonics platform. The use of silicon (Si) photonics platform to ...fabricate photonic integrated circuits (PICs) is a promising approach for low-cost large-scale fabrication considering the CMOS-technology maturity and scalability. However, Si itself cannot provide an efficient emitting light source due to its indirect bandgap. Therefore, the integration of III-V semiconductors on Si wafers allows us to benefit from the III-V emitting properties combined with benefits offered by the Si photonics platform. Direct epitaxy of InP-based materials on 300 mm Si wafers is the most promising approach to reduce the costs. However, the differences between InP and Si in terms of lattice mismatch, thermal coefficients and polarity inducing defects are challenging issues to overcome. III-V/Si hetero-integration platform by wafer-bonding is the most mature integration scheme. However, no additional epitaxial regrowth steps are implemented after the bonding step. Considering the much larger epitaxial toolkit available in the conventional monolithic InP platform, where several epitaxial steps are often implemented, this represents a significant limitation. In this paper, we review an advanced integration scheme of AlGaInAs-based laser sources on Si wafers by bonding a thin InP seed on which further regrowth steps are implemented. A 3 µm-thick AlGaInAs-based MutiQuantum Wells (MQW) laser structure was grown onto on InP-SiO2/Si (InPoSi) wafer and compared to the same structure grown on InP wafer as a reference. The 400 ppm thermal strain on the structure grown on InPoSi, induced by the difference of coefficient of thermal expansion between InP and Si, was assessed at growth temperature. We also showed that this structure demonstrates laser performance similar to the ones obtained for the same structure grown on InP. Therefore, no material degradation was observed in spite of the thermal strain. Then, we developed the Selective Area Growth (SAG) technique to grow multi-wavelength laser sources from a single growth step on InPoSi. A 155 nm-wide spectral range from 1515 nm to 1670 nm was achieved. Furthermore, an AlGaInAs MQW-based laser source was successfully grown on InP-SOI wafers and efficiently coupled to Si-photonic DBR cavities. Altogether, the regrowth on InP-SOI wafers holds great promises to combine the best from the III-V monolithic platform combined with the possibilities offered by the Si photonics circuitry via efficient light-coupling.
Hybrid integration of III–V materials onto silicon by wafer bonding technique is one of the mature and promising approaches to develop advanced photonic integrated devices into the silicon photonics ...platform (SPP). Epitaxial regrowth of III–V materials on InP thin seed layer bonded to an oxidized silicon wafer has shown its potential to extend the III–V mature multiregrowth technologies into the SPP. In the approach, an epitaxial InP layer grown on a 4 in. InP wafer is directly bonded onto a SiO2/Si 200 mm wafer. After InP substrate removal, the new template (InPoSi) is evaluated for epitaxial regrowth: an eight periods strain‐compensated AlGaInAs multiquantum wells (MQW) heterostructure surrounded by two InP cladding layers is grown by metal‐organic vapor phase epitaxy (MOVPE) simultaneously on the InPoSi substrate and on an InP substrate as a reference. For the first time, in situ reflectance and curvature measurements are carried out on InPoSi, enabling the assessment of surface roughness and thermal strain of the III–V materials during growth. High material quality is obtained as attested by X‐ray diffraction, photoluminescence, atomic force microscopy, and transmission electron microscopy.
Epitaxial growth of AlGaInAs‐based multiquantum wells heterostructure on a directly bonded InP‐SiO2/Si substrate is evaluated. The thermal strain induced in the bonded membrane is assessed from in situ curvature measurement carried out during growth. Ex situ characterizations account for the high crystal quality of the structure compared to a reference grown on InP substrate.
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