Phase separation is a cooperative process, the kinetics of which underpin the orderly morphogenesis of domain patterns on mesoscopic scales
. Systems of highly degenerate frozen states may exhibit ...the rare and counterintuitive inverse-symmetry-breaking phenomenon
. Proposed a century ago
, inverse transitions have been found experimentally in disparate materials, ranging from polymeric and colloidal compounds to high-transition-temperature superconductors, proteins, ultrathin magnetic films, liquid crystals and metallic alloys
, with the notable exception of ferroelectric oxides, despite extensive theoretical and experimental work on the latter. Here we show that following a subcritical quench, the non-equilibrium self-assembly of ferroelectric domains in ultrathin films of Pb(Zr
Ti
)O
results in a maze, or labyrinthine pattern, featuring meandering stripe domains. Furthermore, upon increasing the temperature, this highly degenerate labyrinthine phase undergoes an inverse transition whereby it transforms into the less-symmetric parallel-stripe domain structure, before the onset of paraelectricity at higher temperatures. We find that this phase sequence can be ascribed to an enhanced entropic contribution of domain walls, and that domain straightening and coarsening is predominantly driven by the relaxation and diffusion of topological defects. Computational modelling and experimental observation of the inverse dipolar transition in BiFeO
suggest the universality of the phenomenon in ferroelectric oxides. The multitude of self-patterned states and the various topological defects that they embody may be used beyond current domain and domain-wall-based
technologies by enabling fundamentally new design principles and topologically enhanced functionalities within ferroelectric films.
Controlling magnetism by means of electric fields is a key issue for the future development of low-power spintronics. Progress has been made in the electrical control of magnetic anisotropy, domain ...structure, spin polarization or critical temperatures. However, the ability to turn on and off robust ferromagnetism at room temperature and above has remained elusive. Here we use ferroelectricity in BaTiO3 crystals to tune the sharp metamagnetic transition temperature of epitaxially grown FeRh films and electrically drive a transition between antiferromagnetic and ferromagnetic order with only a few volts, just above room temperature. The detailed analysis of the data in the light of first-principles calculations indicate that the phenomenon is mediated by both strain and field effects from the BaTiO3. Our results correspond to a magnetoelectric coupling larger than previous reports by at least one order of magnitude and open new perspectives for the use of ferroelectrics in magnetic storage and spintronics.
Multiferroics are compounds that show ferroelectricity and magnetism. BiFeO3, by far the most studied, has outstanding ferroelectric properties, a cycloidal magnetic order in the bulk, and many ...unexpected virtues such as conductive domain walls or a low bandgap of interest for photovoltaics. Although this flurry of properties makes BiFeO3 a paradigmatic multifunctional material, most are related to its ferroelectric character, and its other ferroic property--antiferromagnetism--has not been investigated extensively, especially in thin films. Here we bring insight into the rich spin physics of BiFeO3 in a detailed study of the static and dynamic magnetic response of strain-engineered films. Using Mössbauer and Raman spectroscopies combined with Landau-Ginzburg theory and effective Hamiltonian calculations, we show that the bulk-like cycloidal spin modulation that exists at low compressive strain is driven towards pseudo-collinear antiferromagnetism at high strain, both tensile and compressive. For moderate tensile strain we also predict and observe indications of a new cycloid. Accordingly, we find that the magnonic response is entirely modified, with low-energy magnon modes being suppressed as strain increases. Finally, we reveal that strain progressively drives the average spin angle from in-plane to out-of-plane, a property we use to tune the exchange bias and giant-magnetoresistive response of spin valves.
Organic electronics is emerging for large-area applications such as photovoltaic cells, rollable displays or electronic paper. Its future development and integration will require a simple, low-power ...organic memory, that can be written, erased and readout electrically. Here we demonstrate a non-volatile memory in which the ferroelectric polarisation state of an organic tunnel barrier encodes the stored information and sets the readout tunnel current. We use high-sensitivity piezoresponse force microscopy to show that films as thin as one or two layers of ferroelectric poly(vinylidene fluoride) remain switchable with low voltages. Submicron junctions based on these films display tunnel electroresistance reaching 1,000% at room temperature that is driven by ferroelectric switching and explained by electrostatic effects in a direct tunnelling regime. Our findings provide a path to develop low-cost, large-scale arrays of organic ferroelectric tunnel junctions on silicon or flexible substrates.
The magnetic‐field‐dependent spin ordering of strained BiFeO3 films is determined using nuclear resonant scattering and Raman spectroscopy. The critical field required to destroy the cycloidal ...modulation of the Fe spins is found to be significantly lower than in the bulk, with appealing implications for field‐controlled spintronic and magnonic devices.
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•Nanosized Al-substituted NiFe2O4 were synthesized through co-precipitation method.•The Rietveld refinement revealed that the compounds have cubic spinel phase with space group ...Fd-3m.•Magnetization and coercivity field were decreased with Al substitution.•Mössbauer spectra elucidate the nature of the phases and cation distribution.•NiAl0.15Fe1.85O4 nanoparticles were showed a good photocatalytic degradation of methyl orange.
Al-substituted nickel ferrite NiAlxFe2−xO4, where x = (0.00, 0.05, 0.10 and 0.15) synthesized through chemical co-precipitation method were investigated for their structural, morphological, optical and magnetic characterization. Al3+ substitution plays a significant role in the properties of the ferrite nanoparticles. The TGA showed three mass losses, whereas DTA resulted in three endothermic peaks. Rietveld refined XRD revealed the development of single phase cubic spinel with crystallite sizes around 28–36 nm for aluminum substituted samples. TEM and SEM analysis showed the monodispersion and cubic-like nanostructure. The room temperature infra-red spectra showed the features of higher and lower energy bands detected at ν1 ∼589–595 cm−1 and ν2 ∼405–409 cm−1, respectively corresponded to octahedral vibration (O-band) and tetrahedral (T-band) complexes that also verify the creation of spinels ferrites. The Raman spectra showed five Raman active modes (A1g + Eg + 3T2g) which are estimated in the spinel structure. The optical study showed that the compounds have an optical band gap between 1.60 and 1.89 eV. Mössbauer spectra elucidate the nature of the phases and cation distribution. From the hysteresis loop, it is clear that the synthesized samples can be control, for the NiAlxFe2-xO4 nanoferrites. The photocatalytic activity of Al-substituted nickel ferrite were studied based on the degradation of methyl orange as a model compound, where the results showed that NiAl0.15Fe 1.85O4 a good photocatalytic activity.
At the end of a rush lasting over half a century, in which CMOS technology has been experiencing a constant and breathtaking increase of device speed and density, Moore's law is approaching the ...insurmountable barrier given by the ultimate atomic nature of matter. A major challenge for 21st century scientists is finding novel strategies, concepts and materials for replacing silicon-based CMOS semiconductor technologies and guaranteeing a continued and steady technological progress in next decades. Among the materials classes candidate to contribute to this momentous challenge, oxide films and heterostructures are a particularly appealing hunting ground. The vastity, intended in pure chemical terms, of this class of compounds, the complexity of their correlated behaviour, and the wealth of functional properties they display, has already made these systems the subject of choice, worldwide, of a strongly networked, dynamic and interdisciplinary research community.
Oxide science and technology has been the target of a wide four-year project, named Towards Oxide-Based Electronics (TO-BE), that has been recently running in Europe and has involved as participants several hundred scientists from 29 EU countries. In this review and perspective paper, published as a final deliverable of the TO-BE Action, the opportunities of oxides as future electronic materials for Information and Communication Technologies ICT and Energy are discussed. The paper is organized as a set of contributions, all selected and ordered as individual building blocks of a wider general scheme. After a brief preface by the editors and an introductory contribution, two sections follow. The first is mainly devoted to providing a perspective on the latest theoretical and experimental methods that are employed to investigate oxides and to produce oxide-based films, heterostructures and devices. In the second, all contributions are dedicated to different specific fields of applications of oxide thin films and heterostructures, in sectors as data storage and computing, optics and plasmonics, magnonics, energy conversion and harvesting, and power electronics.
A first-principles-based effective Hamiltonian is used to investigate low-temperature properties of Ba(Zr,Ti)O(3) relaxor ferroelectrics under an increasing dc electric field. This system ...progressively develops an electric polarization that is highly nonlinear with the dc field. This development leads to a maximum of the static dielectric response at a critical field, E(th), and involves four different field regimes. Each of these regimes is associated with its own behavior of polar nanoregions, such as shrinking, flipping, and elongation of dipoles or change in morphology. The clusters propagating inside the whole sample, with dipoles being parallel to the field direction, begin to form at precisely the E(th) critical field. Such a result, and further analysis we perform, therefore, reveal that field-induced percolation of polar nanoregions is the driving mechanism for the transition from the relaxor to ferroelectric state.
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