Abstract Nowadays, cancer treatment with ion beam is well established and studied. This method allows to deposit the maximum dose to the tumor and minimize the damage to healthy tissue, due to the ...Bragg peak of the ion energy deposition near the end of the particle range. During the treatment, it is possible to provide volumetric dose delivery by changing the particle energy (penetration depth) and adjusting the beam position via a magnetic system. For the beam monitoring system, the precise measurement of the beam direction, shape and fluence in real time becomes crucial to provide effective and safe dose delivery to the tumor. Additionally, the system should work for beam intensities up to 10 10 s -1 for protons, be tolerant to 1 MeV neutron equivalent fluences up to 10 15 cm -2 per year and be to tolerant to magnetic fields (for MR-guided ion beam). The studies presented in this article are focused on the application of the HitPix sensor family with counting electronics and frame-based readout for such a beam monitoring system. The HitPix sensors are monolithic pixelated silicon sensors based on HV-CMOS technology and have been developed at the ASIC and Detector Lab (ADL, KIT). Recent measurements with ion beams and a multi-sensor readout as well as future developments are discussed.
A sensor chip for a capacitively coupled pixel detector (CCPD53) has been designed and produced in a 180 nm high voltage CMOS (HVCMOS) technology on a high resistivity wafer with deep p-well option. ...Capacitively coupled pixel detectors are a simple and low-cost alternative to classical hybrid detectors. They rely on capacitive signal transmission between the sensor chip and the readout chip. A pixel detector with small pixel size can be made without small pitch bumps. The CCPD53 sensor chip contains a pixel matrix of 64×40 pixels, each 25μm×50μm in size. The digital output signals of a group of 16 pixels are encoded and the 8-bit output is connected to signal transmission pads arranged with pitch of 50 μm. The pad geometry has been chosen in a way to fit the geometry of the pixel readout ASIC developed by RD53 collaboration at CERN. The PHOTON readout chip has been implemented in the UMC 180 nm CMOS technology. It allows counting and integration of charge signals. The chip consists of a matrix of 32×30 identical square pixels with 150μm×150μm size. In this paper the sensor and the readout chip will be described and the measurement results presented.
High voltage CMOS pixel sensors will be or are proposed to be used in several particle physics experiments for particle tracking like Mu3e experiment. ATLASPIX3 is the first full reticle size ...monolithic HVCMOS sensor for construction of multi-chip modules. The specifications for the use case have been taken from ATLAS pixel upgrade in fifth layer where it was a candidate for. The size of the chip is 2.0×2.1 cm2 with periphery at one side which makes the chip 3-side buttable. ATLASPIX3 has been implemented in a standard 180 nm HVCMOS process. Each pixel has an area of 150×50μm2 and contains a large charge collecting electrode implemented as deep n-well. The depleted volume around the n-well is enlarged by a high voltage bias and the usage of higher resistivity substrate. The readout electronics supports both triggered and triggerless readout with zero-suppression. ATLASPIX3 could be used for the construction of CMOS modules for particle tracking in experiments where high time resolution, high radiation tolerance, low power and low material budget are required. In the design phase, special attention has been paid to decreasing timing differences between pixels and the rate capability of the readout.
Abstract
This contribution presents simulation results, implementation, and first tests of a
monolithic detector developed at KIT. It consists of a sensor diode tightly integrated with an
analogue ...front-end based on SiGe (Silicon-Germanium) SG13G2 130 nm BiCMOS technology produced at
the Leibniz Institute for High Performance Microelectronics (IHP). The pixel size is
100 μm × 100 μm, and the nwell charge collection node dimensions were reduced
to 10 μm × 10 μm. We investigate the influence of this approach on sensor
performance, spatial resolution via charge sharing and timing behaviour.
Towards the large area HVCMOS demonstrator for ATLAS ITk Prathapan, M.; Benoit, M.; Casanova, R. ...
Nuclear instruments & methods in physics research. Section A, Accelerators, spectrometers, detectors and associated equipment,
08/2019, Letnik:
936
Journal Article
Recenzirano
High Voltage CMOS (HVCMOS) sensor is a proposed cost effective alternative to the existing hybrid sensors in ATLAS ITk pixel barrel for outer layers. To prove the feasibility of HVCMOS sensors in ...ATLAS experiment, a large area demonstrator chip is being designed. This work presents the design details of three HVCMOS sensor chips with an overview of the measurement results of ATLASpix1 which is the first large area (1 cm × 2 cm) prototype in 0.18μm process.
•Architecture overview of three monolithic CMOS detector prototypes.•A novel readout scheme called Content Addressable Buffer readout is proposed.•The proposed readout scheme is proven to be working under laboratory tests.
Characterization results of a HVCMOS sensor for ATLAS Ehrler, F.; Benoit, M.; Dannheim, D. ...
Nuclear instruments & methods in physics research. Section A, Accelerators, spectrometers, detectors and associated equipment,
08/2019, Letnik:
936
Journal Article
Recenzirano
Odprti dostop
High-voltage CMOS (HVCMOS) pixel sensors are depleted monolithic active n-in-p diode pixel sensors implemented in standard commercial CMOS processes. A substantial part of the readout electronics is ...placed inside each pixel. Due to high radiation tolerance and fast signal generation (Perić, 2017) 1, HVCMOS sensors are going to be used (Mu3e, PSI) or are suggested for usage (ATLAS and CLIC, CERN) in High Energy Physics experiments. In this article characterization results of the ATLASpix_Simple sensor are presented. Special attention was paid to the novel time-over-threshold (ToT) measurement with adaptive sampling rate.
•The ATLASpix_Simple monolithic sensor works as expected with an efficiency of >99%.•Time-over-Threshold was measured with a novel adaptive sampling method.•It has been shown that Time-over-Threshold can be used to compensate for time walk.
ATLAS has formed strip CMOS project to study the use of CMOS MAPS devices as silicon strip sensors for the Phase-II Strip Tracker Upgrade. This choice of sensors promises several advantages over the ...conventional baseline design, such as better resolution, less material in the tracking volume, and faster construction speed. At the same time, many design features of the sensors are driven by the requirement of minimizing the impact on the rest of the detector. Hence the target devices feature long pixels which are grouped to form a virtual strip with binary-encoded z position. The key performance aspects are radiation hardness compatibility with HL-LHC environment, as well as extraction of the full hit position with full-reticle readout architecture. To date, several test chips have been submitted using two different CMOS technologies. The AMS 350nm is a high voltage CMOS process (HV-CMOS), that features the sensor bias of up to 120V. The TowerJazz 180nm high resistivity CMOS process (HR-CMOS) uses a high resistivity epitaxial layer to provide the depletion region on top of the substrate. We have evaluated passive pixel performance, and charge collection projections. The results strongly support the radiation tolerance of these devices to radiation dose of the HL-LHC in the strip tracker region. We also describe design features for the next chip submission that are motivated by our technology evaluation.
The Mu3e experiment is searching for the charged lepton flavour violating decay\break μ+→e+e−e+, aiming for an ultimate sensitivity of one in 1016 decays. In an environment of up to 109 muon decays ...per second the detector needs to provide precise vertex, time and momentum information to suppress accidental and physics background. The detector consists of cylindrical layers of 50μm thin High Voltage Monolithic Active Pixel Sensors (HV-MAPS) placed in a 1T magnetic field. The measurement of the trajectories of the decay particles allows for a precise vertex and momentum reconstruction. Additional layers of fast scintillating fibre and tile detectors provide sub-nanosecond time resolution. The MuPix8 chip is the first large scale prototype, proving the scalability of the HV-MAPS technology. It is produced in the AMS aH18 180nm HV-CMOS process. It consists of three sub-matrices, each providing an untriggered datastream of more than 10MHits/s. The latest results from laboratory and testbeam characterisation are presented, showing an excellent performance with efficiencies >99.6% and a time resolution better than 10ns achieved with time walk correction.
Monolithic active pixel sensors (MAPS) based on commercial high-voltage CMOS processes are an exciting technology that is considered as an option for the ATLAS Inner Tracker upgrade. Particles are ...detected using deep n-wells on a p-type substrate as sensor diodes with the depleted region extending into the silicon bulk. With readout electronics and sensor integrated on the same device, the detector complexity and the material budget are greatly reduced. The ATLASPix1 pixel sensor prototype is a large-scale MAPS prototype that implements the full readout chain on a single physical chip. It features a large in-pixel sensor electrode and is produced using the ams aH18 high voltage technology. Three pixel matrices with different readout architectures, triggered and untriggered, and pixel designs are implemented. We show the performance of one of the pixel matrix variants for samples irradiated up to 1015 1MeV meq/cm2.
In view of the tracking detector application to the ATLAS High Luminosity LHC (HL-LHC) upgrade, we have developed a new generation of High Voltage CMOS (HV-CMOS) monolithic pixel-sensor prototypes ...featuring the AMS aH18 (180 nm) commercial CMOS technology. By fully integrating both analog and digital readout-circuitry on the same particle-detecting substrate, current challenges of hybrid sensor technologies, i.e., larger readout input-capacitance, lower production-yield, and higher production and integration cost, can be downscaled. The large electrode design using high-resistivity substrates actively helps to mitigate the charge-trapping effects, making these chips radiation hard. The surface and bulk damage induced in high irradiation environment change the effective doping concentration of the device, which modulates high electric fields as the reverse-bias voltage increases. This effect can cause high leakage current and premature electrical breakdown, driven by impact ionization. In order to assess the characteristics of heavily irradiated samples, we have carried out dedicated campaigns on ATLASPix1 chips that included irradiations of neutrons and protons, made at different facilities. Here, we report on the electrical characterization of the irradiated samples at different ambient conditions, also in comparison to their pre-irradiation properties. Results demonstrate that hadron irradiated devices can be safely operated at a voltage high enough to allow for high efficiency, up to the fluence of 2×1015 neq/cm2, beyond the radiation levels (TID and NIEL) expected in the outermost pixel layers of the new ATLAS tracker for HL-LHC.
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