One of the promising tools for monolithic photonic integrated circuits (PICs) fabrication is focused ion beam (FIB) lithography. It's well-known that FIB etching process induces radiation defects ...formation and consequently leads to losses in internal quantum efficiency of luminescence. We demonstrate the possibility of restoring luminescence properties of etched AlGaAs/GaAs heterostructure by means of annealing. Achieved results give an opportunity for fabrication of active PICs elements by FIB.
A new approach for calculating the ion dose spatial distribution of the focused ion beam is proposed. The approach is based on the analysis of the secondary electron microscopy image of the area ...irradiated by the focused ion beam.
We have created a quantum-cascade laser with 7–8 μm wavelength and surface radiation output through a lattice formed by focused ion beam etching of the upper cladding of the waveguide. The active ...area of the quantum-cascade laser heterostructure was formed on the basis of the solid alloy heteropair In
0.53
Ga
0.47
As/Al
0.48
In
0.52
As with two-phonon depletion of the cascade lower level. We demonstrate laser generation in the spectral band 7–8 μm for the created lasers with the selective ring resonator. The studies of the generation spectra for the temperatures in 8–77 K range have shown, that the mode spacing in the generation spectra of these lasers correspond to the whispering-gallery modes.
The effect of annealing temperature and time on the luminescence intensity of the InGaN/GaN heterostructure subjected to ion beam etching was studied. We show that annealing at a temperature of ...1100°C makes it possible to eliminate the radiation defects in the GaN layers that arise in the etching process with a focused Ga
+
ion beam (30 keV).
Selective Epitaxy of Submicron GaN Structures Lundin, W. V.; Tsatsulnikov, A. F.; Rodin, S. N. ...
Semiconductors (Woodbury, N.Y.),
12/2019, Letnik:
53, Številka:
16
Journal Article
Recenzirano
The effect of the growth temperature and the flow of trimethylgallium on the process of selective epitaxy of gallium nitride in windows of submicron size have been studied. The conditions under which ...homogeneous nucleation and coalescence of nuclei are combined with a low growth rate are determined. The steady growth of variously oriented gallium nitride strips with a height of 50 nm and a width of 600 nm was realized.
Single-mode lasing of quantum-cascade lasers with a distributed Bragg reflector formed by ion-beam etching in layers of the upper waveguide cladding is demonstrated. The active region is formed based ...on an In
0.53
Ga
0.47
As/Al
0.48
In
0.52
As solid-alloy heteropair with two-phonon depletion of the lower level in the cascade. Single-mode lasing at a temperature of 280 K corresponds to the emission wavelength of 7.74 μm, and the side-mode suppression ratio is 24 dB.
A significant difference in the growth mechanism of spatially closed structures of gallium nitride during selective growth in submicron windows with and without penetration into the GaN sublayer was ...demonstrated. The mechanisms of generation and development of dislocations, their role in the formation of self-organizing coaxial structures were modeled.
The selective epitaxial growth of GaN by metalorganic vapor-phase epitaxy combined with ion-beam etching is investigated. To this end, partially masked GaN epitaxial layers are fabricated by ...depositing a thin Si
3
N
4
layer onto the surface in a single technological process with the growth of GaN and the subsequent opening of windows of different shapes in this layer by an ion beam. Selective epitaxial growth regimes are studied. It is shown that, in a situation where the total area of the windows in the mask is small relative to the total area of the sample, the required epitaxy duration should be 5–10 s, which impairs the reproducibility of the parameters of the epitaxial process. It is also shown that the mechanism of the selective growth of submicrometer objects differs significantly from that for planar layers and selectively grown layers with dimensions of ~1 μm or greater. The effect of precursor (trimethylgallium and ammonia) fluxes on the character of selective epitaxy is examined. To investigate the possibilities of varying mask topology for fabricating model objects with regard to photonic crystals, the impact of the shape and orientation of the windows in the Si
3
N
4
mask on the character of selective epitaxy is studied.
The GaN planar hexagonal microcavities are grown by the selective vapor-phase epitaxy technique. The spectra are measured by the low-temperature cathodoluminescence method using a scanning electron ...microscope. The obtained spectra show a huge Rabi splitting (~100 meV). Numerical simulation of the spatial distribution of the intensities of modes in a hexagonal cavity is carried out. Certain modes can have a high spatial localization leading to strong coupling with the exciton and huge Rabi splitting. The fraction of excitons in polariton modes, which correlates with the intensity of exciton radiation associated with these modes, is theoretically calculated for hexagonal-shaped microcavities. Thus, the form of the dependence of the radiation probability on the eigenfrequencies of the structure is obtained.
PDF
