The concept of a large silicon tracker for a future ν
μ(ν
e
) ν
τ oscillation experiment is discussed. Laboratory results and test beam results of the first prototypes are presented.
We have developed a novel and highly radiation-tolerant n-in-p silicon microstrip sensor for very high radiation environments such as in the Super Large Hadron Collider. The sensors are designed for ...a fluence of 1×10
15
neq/cm
2 and are fabricated from p-type, FZ, 6
in. (150
mm) wafers onto which we lay out a single 9.75
cm×9.75
cm large-area sensor and several 1
cm×1
cm miniature sensors with various n-strip isolation structures. By evaluating the sensors both pre- and post-irradiation by protons and neutrons, we find that the full depletion voltage evolves to approximately 800
V and that the n-strip isolation depends on the p
+ concentration. In addition, we characterize the interstrip resistance, interstrip capacitance and the punch-through-protection (PTP) voltage. The first fabrication batch allowed us to identify the weak spots in the PTP and the stereo strip layouts. By understanding the source of the weakness, the mask was modified accordingly. After modification, the follow-up fabrication batches and the latest fabrication of about 30 main sensors and associated miniature sensors have shown good performance, with no sign of microdischarge up to 1000
V.
We have been developing a novel radiation-tolerant n+-in-p silicon microstrip sensor for very high radiation environments, aiming for application in the high luminosity large hadron collider. The ...sensors are fabricated in 6in., p-type, float-zone wafers, where large-area strip sensor designs are laid out together with a number of miniature sensors. Radiation tolerance has been studied with ATLAS07 sensors and with independent structures. The ATLAS07 design was developed into new ATLAS12 designs. The ATLAS12A large-area sensor is made towards an axial strip sensor and the ATLAS12M towards a stereo strip sensor. New features to the ATLAS12 sensors are two dicing lines: standard edge space of 910μm and slim edge space of 450μm, a gated punch-through protection structure, and connection of orphan strips in a triangular corner of stereo strips. We report the design of the ATLAS12 layouts and initial measurements of the leakage current after dicing and the resistivity of the wafers.
The ATLAS group has evaluated the charge collection in silicon microstrip sensors irradiated up to a fluence of 1×1016neq/cm2, exceeding the maximum of 1.6×1015neq/cm2 expected for the strip tracker ...during the high luminosity LHC (HL-LHC) period including a safety factor of 2. The ATLAS12, n+-on-p type sensor, which is fabricated by Hamamatsu Photonics (HPK) on float zone (FZ) substrates, is the latest barrel sensor prototype. The charge collection from the irradiated 1×1cm2 barrel test sensors has been evaluated systematically using penetrating β-rays and an Alibava readout system. The data obtained at different measurement sites are compared with each other and with the results obtained from the previous ATLAS07 design. The results are very consistent, in particular, when the deposit charge is normalized by the sensor's active thickness derived from the edge transient current technique (edge-TCT) measurements. The measurements obtained using β-rays are verified to be consistent with the measurements using an electron beam. The edge-TCT is also effective for evaluating the field profiles across the depth. The differences between the irradiated ATLAS07 and ATLAS12 samples have been examined along with the differences among the samples irradiated with different radiation sources: neutrons, protons, and pions. The studies of the bulk properties of the devices show that the devices can yield a sufficiently large signal for the expected fluence range in the HL-LHC, thereby acting as precision tracking sensors.
Effects of Single Event Upsets (SEU) and Single Event Transients (SET) are studied in the FE-I4B chip of the innermost layer of the ATLAS pixel system. SEU/SET affect the FE-I4B Global Registers as ...well as the settings for the individual pixels, causing, among other things, occupancy losses, drops in the low voltage currents, noisy pixels, and silent pixels. Quantitative data analysis and simulations indicate that SET dominate over SEU on the load line of the memory. Operational issues and mitigation techniques are presented.
Detailed studies of full-size ATLAS12 sensors Hommels, L.B.A.; Baca, M.; Broughton, J. ...
Nuclear instruments & methods in physics research. Section A, Accelerators, spectrometers, detectors and associated equipment,
09/2016, Letnik:
831
Journal Article
Recenzirano
Odprti dostop
The “ATLAS ITk Strip Sensor Collaboration” R&D group has developed a second iteration of single-sided n+-in-p type micro-strip sensors for use in the tracker upgrade of the ATLAS experiment at the ...High-Luminosity (HL) LHC. The full size sensors measure approximately 97×97mm2 and are designed for tolerance against the 1.1×1015neq/cm2 fluence expected at the HL-LHC. Each sensor has 4 columns of 1280 individual 23.9mm long channels, arranged at 74.5μm pitch. Four batches comprising 120 sensors produced by Hamamatsu Photonics were evaluated for their mechanical, and electrical bulk and strip characteristics. Optical microscopy measurements were performed to obtain the sensor surface profile. Leakage current and bulk capacitance properties were measured for each individual sensor. For sample strips across the sensor batches, the inter-strip capacitance and resistance as well as properties of the punch-through protection structure were measured. A multi-channel probecard was used to measure leakage current, coupling capacitance and bias resistance for each individual channel of 100 sensors in three batches. The compiled results for 120 unirradiated sensors are presented in this paper, including summary results for almost 500,000 strips probed. Results on the reverse bias voltage dependence of various parameters and frequency dependence of tested capacitances are included for validation of the experimental methods used. Comparing results with specified values, almost all sensors fall well within specification.
The ATLAS Semiconductor Tracker (SCT) will be a central part of the tracking system of the ATLAS experiment. The SCT consists of four concentric barrels of silicon detectors as well as two silicon ...endcap detectors formed by nine disks each. The layout of the forward silicon detector module presented in this paper is based on the approved layout of the silicon detectors of the SCT, their geometry and arrangement in disks, but uses otherwise components identical to the barrel modules of the SCT. The module layout is optimized for excellent thermal management and electrical performance, while keeping the assembly simple and adequate for a large scale module production. This paper summarizes the design and layout of the module and present results of a limited prototype production, which has been extensively tested in the laboratory and testbeam. The module design was not finally adopted for series production because a dedicated forward hybrid layout was pursued.
A radiation hard n+-in-p micro-strip sensor for the use in the Upgrade of the strip tracker of the ATLAS experiment at the High Luminosity Large Hadron Collider (HL-LHC) has been developed by the ...“ATLAS ITk Strip Sensor collaboration” and produced by Hamamatsu Photonics.
Surface properties of different types of end-cap and barrel miniature sensors of the latest sensor design ATLAS12 have been studied before and after irradiation. The tested barrel sensors vary in “punch-through protection” (PTP) structure, and the end-cap sensors, whose stereo-strips differ in fan geometry, in strip pitch and in edge strip ganging options. Sensors have been irradiated with proton fluences of up to 1×1016 neq/cm2, by reactor neutron fluence of 1×1015 neq/cm2 and by gamma rays from 60Co up to dose of 1MGy. The main goal of the present study is to characterize the leakage current for micro-discharge breakdown voltage estimation, the inter-strip resistance and capacitance, the bias resistance and the effectiveness of PTP structures as a function of bias voltage and fluence. It has been verified that the ATLAS12 sensors have high breakdown voltage well above the operational voltage which implies that different geometries of sensors do not influence their stability. The inter-strip isolation is a strong function of irradiation fluence, however the sensor performance is acceptable in the expected range for HL-LHC. New gated PTP structure exhibits low PTP onset voltage and sharp cut-off of effective resistance even at the highest tested radiation fluence. The inter-strip capacitance complies with the technical specification required before irradiation and no radiation-induced degradation was observed. A summary of ATLAS12 sensors tests is presented including a comparison of results from different irradiation sites. The measured characteristics are compared with the previous prototype of the sensor design, ATLAS07.
•Surface study verified high radiation resistance of developed n-in-p strip sensors.•Sensors have high breakdown voltage before and after irradiation.•Inter-strip capacitance is sufficiently low and does not change with irradiation.•Primary factor of inter-strip resistance decrease is total ionizing dose.•New gated PTP doubles current flowing into bias rail without onset voltage increase.
The upgrade to the High-Luminosity LHC foreseen in about ten years represents a great challenge for the ATLAS inner tracker and the silicon strip sensors in the forward region. Several strip sensor ...designs were developed by the ATLAS collaboration and fabricated by Hamamatsu in order to maintain enough performance in terms of charge collection efficiency and its uniformity throughout the active region. Of particular attention, in the case of a stereo-strip sensor, is the area near the sensor edge where shorter strips were ganged to the complete ones. In this work the electrical and charge collection test results on irradiated miniature sensors with forward geometry are presented. Results from charge collection efficiency measurements show that at the maximum expected fluence, the collected charge is roughly halved with respect to the one obtained prior to irradiation. Laser measurements show a good signal uniformity over the sensor. Ganged strips have a similar efficiency as standard strips.
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