The upgrade of the ATLAS Inner Detector Ferrère, D.
Nuclear instruments & methods in physics research. Section A, Accelerators, spectrometers, detectors and associated equipment,
08/2013, Letnik:
718
Journal Article
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With the Large Hadron Collider (LHC) successfully collecting data at 7TeV and even at 8TeV since April 2012, plans are actively advancing for a series of upgrades in phase with the three long ...shutdown periods leading to detector improvement. The ATLAS collaboration will upgrade at the next shutdown in 2013–2014 its semiconductor pixel tracking detector with a new Insertable B-Layer (IBL) between the existing innermost pixel layer and the vacuum pipe of the LHC. The extreme operating conditions at this location led considering the development of new radiation hard pixel sensor technologies and a new front-end readout chip. The IBL community is currently working for producing modules with silicon planar and 3D technology towards the loading on 14 local stave structures as well as the integration around the beam pipe and in the ATLAS detector. The High-Luminosity LHC (HL-LHC) will eventually increase to about five times the LHC design-luminosity some 10-years from now requiring a complete Inner Detector replacement. With the increase luminosity, the cumulated radiation damages and the significant increase of the occupancy the current Inner Detector will not provide the required performances to fully exploit the discovery potential. An overview of the IBL features and construction will be described as well as some R&Ds investigations towards Phase-2 HL-LHC inner tracker upgrade.
Time projection chambers for the T2K near detectors Abgrall, N.; Andrieu, B.; Baron, P. ...
Nuclear instruments & methods in physics research. Section A, Accelerators, spectrometers, detectors and associated equipment,
05/2011, Letnik:
637, Številka:
1
Journal Article
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The T2K experiment is designed to study neutrino oscillation properties by directing a high intensity neutrino beam produced at J-PARC in Tokai, Japan, towards the large Super-Kamiokande detector ...located 295
km away, in Kamioka, Japan. The experiment includes a sophisticated near detector complex, 280
m downstream of the neutrino production target in order to measure the properties of the neutrino beam and to better understand neutrino interactions at the energy scale below a few GeV. A key element of the near detectors is the ND280 tracker, consisting of two active scintillator–bar target systems surrounded by three large time projection chambers (TPCs) for charged particle tracking. The data collected with the tracker are used to study charged current neutrino interaction rates and kinematics prior to oscillation, in order to reduce uncertainties in the oscillation measurements by the far detector. The tracker is surrounded by the former UA1/NOMAD dipole magnet and the TPCs measure the charges, momenta, and particle types of charged particles passing through them. Novel features of the TPC design include its rectangular box layout constructed from composite panels, the use of bulk micromegas detectors for gas amplification, electronics readout based on a new ASIC, and a photoelectron calibration system. This paper describes the design and construction of the TPCs, the micromegas modules, the readout electronics, the gas handling system, and shows the performance of the TPCs as deduced from measurements with particle beams, cosmic rays, and the calibration system.
► First large scale time projection chambers with micropattern gas detectors. ► Incorporates new ASIC for electronic readout. ► Includes a pressure equalizing gas system and a photoelectron calibration system. ► Specifications achieved as deduced from neutrino, cosmic, and calibration tests. ► Will play an important role in T2K to measure neutrino oscillations.
The Picosecond Avalanche Detector is a multi-junction silicon pixel detector devised to enable charged-particle tracking with high spatial resolution and picosecond time-stamping capability. A ...proof-of-concept prototype of the PicoAD sensor has been produced by IHP microelectronics. Measurements with a 55Fe X-ray radioactive source show that the prototype is functional with an avalanche gain up to a maximum electron gain of 23.
Abstract
A monolithic silicon pixel detector prototype has been
produced in the SiGe BiCMOS SG13G2 130 nm node technology by
IHP. The ASIC contains a matrix of hexagonal pixels with pitch of
...approximately 100 μm. Three analog pixels were calibrated in
laboratory with radioactive sources and tested in a 180 GeV/c pion
beamline at the CERN SPS. A detection efficiency of
(99.9
-0.2
+0.1
)% was measured together with a time
resolution of (36.4 ± 0.8) ps at the highest preamplifier bias
current working point of 150 μA and at a sensor bias voltage
of 160 V. The ASIC was also characterized at lower bias voltage and
preamplifier current.
Abstract The time resolution of the second monolithic silicon pixel prototype produced for the MONOLITH H2020 ERC Advanced project was studied using a femtosecond laser. The ASIC contains a matrix of ...hexagonal pixels with 100 μm pitch, readout by low-noise and very fast SiGe HBT frontend electronics. Silicon wafers with 50 μm thick epilayer with a resistivity of 350 Ωcm were used to produce a fully depleted sensor. At the highest frontend power density tested of 2.7 W/cm 2 , the time resolution with the femtosecond laser pulses was found to be 45 ps for signals generated by 1200 electrons, and 3 ps in the case of 11k electrons, which corresponds approximately to 0.4 and 3.5 times the most probable value of the charge generated by a minimum-ionizing particle. The results were compared with testbeam data taken with the same prototype to evaluate the time jitter produced by the fluctuations of the charge collection.
Abstract
A monolithic silicon pixel prototype produced for the
MONOLITH ERC Advanced project was irradiated with 70 MeV protons up
to a fluence of 1 × 10
16
1 MeV
n
eq
/cm
2
. The ASIC contains a ...matrix of
hexagonal pixels with 100 μm pitch, readout by low-noise and
very fast SiGe HBT frontend electronics. Wafers with 50 μm
thick epilayer with a resistivity of 350 Ωcm were used to
produce a fully depleted sensor. Laboratory tests conducted with a
90
Sr source show that the detector works satisfactorily after
irradiation. The signal-to-noise ratio is not seen to change up to
fluence of 6 × 10
14
n
eq
/cm
2
. The signal
time jitter was estimated as the ratio between the voltage noise and
the signal slope at threshold. At -35°C, sensor bias voltage
of 200 V and frontend power consumption of 0.9 W/cm
2
, the time
jitter of the most-probable signal amplitude was estimated to be
σ
t
90
Sr = 21 ps for proton fluence up to
6 × 10
14
n
eq
/cm
2
and 57 ps at
1 × 10
16
n
eq
/cm
2
. Increasing the sensor
bias to 250 V and the analog voltage of the preamplifier from 1.8
to 2.0 V provides a time jitter of 40 ps at
1 × 10
16
n
eq
/cm
2
.
Abstract
The proof-of-concept prototype of the Picosecond Avalanche
Detector, a multi-PN junction monolithic silicon detector with
continuous gain layer deep in the sensor depleted region, was tested
...with a beam of 180 GeV pions at the CERN SPS. The prototype
features low noise and fast SiGe BiCMOS frontend electronics and
hexagonal pixels with 100 μm pitch. At a sensor bias voltage
of 125 V, the detector provides full efficiency and average time
resolution of 30, 25 and 17 ps in the overall pixel area for a
power consumption of 0.4, 0.9 and 2.7 W/cm
2
, respectively. In
this first prototype the time resolution depends significantly on
the distance from the center of the pixel, varying at the highest
power consumption measured between 13 ps at the center of the pixel
and 25 ps in the inter-pixel region.
Abstract
A second monolithic silicon pixel prototype was produced for
the MONOLITH project. The ASIC contains a matrix of hexagonal pixels
with 100 μm pitch, readout by a low-noise and very fast SiGe ...HBT
frontend electronics. Wafers with 50 μm thick epilayer of
350 Ωcm resistivity were used to produce a fully depleted
sensor. Laboratory and testbeam measurements of the analog channels
present in the pixel matrix show that the sensor has a 130 V wide
bias-voltage operation plateau at which the efficiency is 99.8%.
Although this prototype does not include an internal gain layer, the
design optimised for timing of the sensor and the front-end
electronics provides a time resolutions of 20 ps.
We report on the experimental study made on a successive prototype of High-Voltage Complementary Metal-Oxide-Semiconductor ATLASPix2 sensor for the tracking detector application, developed with 180 ...nm feature size. These sensors are to qualify mainly the peripheral data processing blocks (e.g. Command Decoder, Trigger Buffer, etc.). Over a decade, the monolithic pixelated sensors for a foreseen application to the ATLAS High-Luminosity LHC upgrade are being investigated as a viable option and a significant R&D progress made. It is a smaller version of 24×36 pixelated sensor in comparison to the earlier generation of ATLASPix1 fabricated in both ams AG, Austria, and TSI Semiconductors, U.S.A. . While ams produced ATLASPix2 showed breakdown voltage ∼50 V in nonirradiated condition as it was seen on its predecessors ATLASpix1, TSI produced prototypes reported breakdown voltage greater than 100 V . The chosen wafer of MCz 20 Ωċ cm P-type substrate resistivity can deplete a few tenths of μm, where the process-driven surface damage can have a greater impact on device operating conditions before and after irradiation. In an aim to understand device intrinsic performance at the irradiated case, a dedicated neutron irradiation campaign has been made at Jožef Stefan Institute in Slovenia for different fluences. Characterizations have been performed at different temperatures after irradiation to analyze the leakage current and breakdown voltage before and after irradiation. TSI prototypes showed a breakdown voltage decrease (∼90 V) due to impact ionization and enhanced effective doping concentration. Results demonstrated for the neutron-irradiated devices up to the fluence of 2×1015neq/cm2 can still safely be operated at a voltage high enough to allow for high efficiency. Accelerated annealing steps were also made on selective irradiated ATLASPix2 samples, equivalent to more than two years of room-temperature annealing (at 20 °C), and they showed the reassuring expected breakdown voltage increase and damage constant rate α* (geometry dependent) decrease, driven by the beneficial annealing.
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