The first batch of compensated LGAD sensors Sola, V.; Paternoster, G.; Morozzi, A. ...
Nuclear instruments & methods in physics research. Section A, Accelerators, spectrometers, detectors and associated equipment,
July 2024, 2024-07-00, Letnik:
1064
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A new development of radiation-resistant silicon sensors is presented. The new sensors exploit the Low-Gain Avalanche Diode (LGAD) technology, with internal multiplication of the charge carriers, in ...combination with thin substrates, intrinsically less affected by radiation. An innovative design of the gain implant typical of the LGADs has been developed and fabricated, employing the compensation of acceptor and donor dopants to reproduce the effective acceptor doping dose of standard LGAD sensors.
At the end of 2022, the Fondazione Bruno Kessler (Italy) delivered the first batch of compensated LGAD sensors on 30μm thick p-type epitaxial substrates. Electrical and transient characterisation of the sensors has been performed before and after irradiation up to 5 ⋅1015 1 MeV equivalent n/cm2.
The ultimate goal is to develop and produce compensated LGAD sensors that can efficiently operate above fluences of 1017 1 MeV equivalent n/cm2.
DC-coupled resistive silicon detectors for 4D tracking Menzio, L.; Arcidiacono, R.; Borghi, G. ...
Nuclear instruments & methods in physics research. Section A, Accelerators, spectrometers, detectors and associated equipment,
10/2022, Letnik:
1041
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In this work, we introduce a new design concept: the DC-coupled Resistive Silicon Detectors, based on the LGAD technology. This new design intends to address a few known drawbacks of the first ...generation of AC-coupled Resistive Silicon Detectors (RSD). The sensor behaviour is simulated using a fast hybrid approach based on a combination of two packages, Weightfield2 and LTSpice. The simulation demonstrates that the key features of the RSD design are maintained, yielding excellent space and time resolutions: a few tens of ps and a few microns. In this report, we will outline the optimization methodology and the results of the simulation. We will also present detailed studies on the effects induced by the choice of key design parameters on the space and time resolutions provided by this sensor.
3D sensors have already been proven as a viable and inherently radiation hard technology. While encouraging timing results have been obtained from small-pitch 3D test structure, new approaches are ...also being investigated to meet the challenges of the coming years.
One such approach, pursued in the framework of the INFN TIMESPOT project, is the development of 3D sensors with trenched electrodes. The trench geometry will provide more uniform electric and weighting fields than in current devices, allowing for good timing resolution, while also maintaining or improving upon the usual advantages of a 3D geometry.
We report the fabrication of the first batch of devices, consisting of TIMEPIX compatible pixel sensors, as well as a number of test devices that have been used to study the performance of different pixel geometries. Results highlighted good intrinsic properties, with leakage current of the order of 10 pA per pixel and opposite electrode pixel capacitance of approximately 70–75 fF per pixel, in good agreement with previous simulations of these devices.
State-of-the-art and evolution of UFSD sensors design at FBK Arcidiacono, R.; Borghi, G.; Boscardin, M. ...
Nuclear instruments & methods in physics research. Section A, Accelerators, spectrometers, detectors and associated equipment,
10/2020, Letnik:
978, Številka:
C
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In the past few years, there has been growing interest in the development of silicon sensors able to simultaneously measure accurately the time of passage and the position of impinging charged ...particles. In this contribution, a review of the progresses in the design of UFSD (Ultra-Fast Silicon Detectors) sensors, manufactured at the FBK (Fondazione Bruno Kessler) Foundry, aiming at tracking charged particles in 4 dimensions, is presented. The state-of-the-art UFSD sensors, with excellent timing capability, are planned to be used in both ATLAS and CMS experiments detector upgrade, in order to reduce the background due to the presence of overlapping events in the same bunch crossing.
The latest results on sensors characterization including time resolution, radiation resistance and uniformity of the response are here summarized, pointing out the interplay between the design of the gain layer and the UFSD performances. The research is now focusing on the maximization of the sensor fill factor, to be able to reduce the pixel size, exploring the implementation of shallow trenches for the pixel isolation and the development of resistive AC-coupled UFSD sensors. In conclusion, a brief review on research paths tailored for detection of low energy X-rays or for low material budget applications is given.
Optimization of the gain layer design of ultra-fast silicon detectors Siviero, F.; Arcidiacono, R.; Borghi, G. ...
Nuclear instruments & methods in physics research. Section A, Accelerators, spectrometers, detectors and associated equipment,
06/2022, Letnik:
1033
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In the past few years, the need of measuring accurately the spatial and temporal coordinates of the particles generated in high-energy physics experiments has spurred a strong R&D in the field of ...silicon sensors. Within these research activities, the so-called Ultra-Fast Silicon Detectors (UFSDs), silicon sensors optimized for timing based on the Low-Gain Avalanche Diode (LGAD) design, have been proposed and adopted by the CMS and ATLAS collaborations for their respective timing layers. The defining feature of the Ultra-Fast Silicon Detectors (UFSDs) is the internal multiplication mechanism, determined by the gain layer design. In this paper, the performances of several types of gain layers, measured with a telescope instrumented with a 90Sr β-source, are reported and compared. The measured sensors are produced by Fondazione Bruno Kessler (FBK) and Hamamatsu Photonics (HPK).
The sensor yielding the best performance, both when new and irradiated, is an FBK 45 μm-thick sensor with a carbonated deep gain implant, where the carbon and the boron implants are annealed concurrently with a low thermal load. This sensor is able to achieve a time resolution of 40 ps up to a radiation fluence of 2.5⋅1015 neq/cm2, delivering at least 5 fC of charge.
After the manufacture and delivery of a state-of-the-art detection system for the XRF-XAFS beamline of the synchrotron light source SESAME, a new and improved detection system was realized. This new ...multichannel modular detection system based on Silicon Drift Detectors consists of 8 monolithic multipixel arrays, each comprising 8 SDD cells with a total area of 570 mm2. As the previous one, this 64 channels integrated detection system includes ultra-low-noise front-end electronics, dedicated acquisition system, digital filtering, temperature control and stabilization. With respect to the SESAME version, the new instrument implements a tungsten collimation system yielding a total collimated sensitive area of 500 mm2. Optimized to work in an energy range of 3–30 keV, the system shows an overall energy resolution (sum of its 64 cells) below 180 eV FWHM at the 5.9 Mn Kα line at room temperature. We highlight the system performance and in particular the peak to background ratio, before and after the collimation of the sensors.
A fast 144-channel proton counter prototype, designed for monitoring the fluence rate of clinical proton beams, is based on a thin Low Gain Avalanche Detector (LGAD), segmented into 146 strips ...(114 μm width, 26214 μm length, 180 μm pitch). The layout of the sensor was designed in the framework of the Modeling and Verification for Ion beam Treatment planning (MoVe-IT) project in collaboration with Fondazione Bruno Kessler (FBK, Trento, Italy) and fourteen wafers were produced and delivered by FBK in 2020. In this paper, we present the laboratory characterization of the sensors performed on the entire wafer at FBK, right after production, and at the University of Turin after cutting the sensors using a probe station connected with a power device analyzer for static electrical tests and an infrared picosecond laser to study the dynamic properties. In addition, one sensor was tested with the clinical proton beam at National Center for Oncological Hadrontherapy (CNAO, Pavia, Italy).
The results obtained from the test at FBK and UNITO facilities demonstrated that the cut did not affect the yield production. The static electrical tests proved that the MoVe-IT-2020 sensors production was of very high quality. The width of the inter-strip dead region measured was 80.8 μm. 22% larger than the distance of the gain layers, and has a small dependence on laser intensities. A preliminary beam test at CNAO showed good separation between signal and noise in the LGAD strip, which allows counting properly the protons by selecting the optimal signal threshold.
In this work we present new developments of Silicon Drift Detectors (SDDs) of different sizes in view of their use in future Siddharta-2 experiments. The SIDDHARTA experiment used X-ray spectroscopy ...of the kaonic atoms to determine the transition yields and the strong interaction induced shift and width at the lowest experimentally accessible level. In this work we report about the SDDs development for the apparatus upgrade, with particular emphasis of X-ray measurements at cryogenic temperatures. The SDDs presented are designed as single unit with square shaped of different areas 64 mm 2 (8 mm × 8 mm) or 144 mm 2 (12 mm × 12 mm) and also as monolithic array of 9 elements (8 mm × 8 mm each, total area 26 mm × 26 mm) in a 3×3 format. The read-out of the SDDs is based on a CMOS preamplifier (CUBE) both for the single unit both for the 3×3 array. The array required in addition the use of an Application Specific Integrated Circuit (ASIC) and of a custom Data Acquisition System for the acquisition of all the units. The CMOS technology is intrinsically more robust at lower temperatures than the more conventional JFET transistor used in SDDs readout and it allows the use of these devices at cryogenic temperatures. For instance an energy resolution lower than 125 eV at the MnKa line has been obtained with a 64 mm 2 at the temperature of 50 K and shaping time of 2 μs.
This work deals with the development of new Silicon Drift Detectors (SDDs) and readout electronics for the upgrade of the SIDDHARTA experiment. The detector is based on a SDDs array organized in a ...4×2 format with each SDD square shaped with 64mm2 (8×8) active area. The total active area of the array is therefore 32×16mm2 while the total area of the detector (including 1mm border dead area) is 34×18mm2. The SIDDHARTA apparatus requires 48 of these modules that are designed and manufactured by Fondazione Bruno Kessler (FBK). The readout electronics is composed by CMOS preamplifiers (CUBEs) and by the new SFERA (SDDs Front-End Readout ASIC) circuit. SFERA is a 16-channels readout ASIC designed in a 0.35μm CMOS technology, which features in each single readout channel a high order shaping amplifier (9th order Semi-Gaussian complex-conjugate poles) and a high efficiency pile-up rejection logic. The outputs of the channels are connected to an analog multiplexer for the external analog to digital conversion. An on-chip 12-bit SAR ADC is also included. Preliminary measurements of the detectors in the single SDD format are reported. Also measurements of low X-ray energies are reported in order to prove the possible extension to the soft X-ray range.
Radiation-induced effects on the RIGEL ASIC Ceraudo, F.; Dedolli, I.; Cirrincione, D. ...
Nuclear instruments & methods in physics research. Section A, Accelerators, spectrometers, detectors and associated equipment,
08/2022, Letnik:
1037
Journal Article
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This paper describes the radiation tests performed on the RIGEL, the Application-Specific Integrated Circuit (ASIC) designed within the scope of the PixDD project, whose goal is the production of a ...multi-pixel silicon-based detector system to be placed at the focal plane of X-ray optics on board space astronomy missions. Carried out at the RADiation Effects Facility of the University of Jyväskylä (Finland), the campaign aimed at studying the response of the ASIC to radiation damage, in the form of both Total Ionising Dose and Single Event Effects, especially latch-ups and bit upsets. Experimental results were then combined with simulations of the space environment for a low-inclination equatorial orbit and for a Sun-synchronous orbit. The analysis shows that the device under study may be safely operated on an equatorial orbit without any circuitry to protect it from transient radiation phenomena, whereas the need of such a precaution is necessary in the case of a Sun-synchronous orbit. According to the experimental results, the degradation due to Total Ionising Dose, measured in terms of Equivalent Noise Charge, stays below 10% up to 34krad, implying that it can be managed or neglected altogether for the simulated orbits.
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