Short wavelength exchange-dominated propagating spin waves will enable magnonic devices to operate at higher frequencies and higher data transmission rates. While giant magnetoresistance (GMR)-based ...magnetic nanocontacts are efficient injectors of propagating spin waves, the generated wavelengths are 2.6 times the nano-contact diameter, and the electrical signal strength remains too weak for applications. Here we demonstrate nano-contact-based spin wave generation in magnetic tunnel junctions and observe large-frequency steps consistent with the hitherto ignored possibility of second- and third-order propagating spin waves with wavelengths of 120 and 74 nm, i.e., much smaller than the 150-nm nanocontact. Mutual synchronization is also observed on all three propagating modes. These higher-order propagating spin waves will enable magnonic devices to operate at much higher frequencies and greatly increase their transmission rates and spin wave propagating lengths, both proportional to the much higher group velocity.
Spin-orbit torque (SOT) can drive sustained spin wave (SW) auto-oscillations in a class of emerging microwave devices known as spin Hall nano-oscillators (SHNOs), which have highly nonlinear ...properties governing robust mutual synchronization at frequencies directly amenable to high-speed neuromorphic computing. However, all demonstrations have relied on localized SW modes interacting through dipolar coupling and/or direct exchange. As nanomagnonics requires propagating SWs for data transfer and additional computational functionality can be achieved using SW interference, SOT-driven propagating SWs would be highly advantageous. Here, we demonstrate how perpendicular magnetic anisotropy can raise the frequency of SOT-driven auto-oscillations in magnetic nanoconstrictions well above the SW gap, resulting in the efficient generation of field and current tunable propagating SWs. Our demonstration greatly extends the functionality and design freedom of SHNOs, enabling long-range SOT-driven SW propagation for nanomagnonics, SW logic, and neuromorphic computing, directly compatible with CMOS technology.
In spin Hall nano-oscillators (SHNOs), pure spin currents drive local regions of magnetic films and nanostructures into auto-oscillating precession. If such regions are placed in close proximity to ...each other they can interact and may mutually synchronize. Here, we demonstrate robust mutual synchronization of two-dimensional SHNO arrays ranging from 2 × 2 to 8 × 8 nano-constrictions, observed both electrically and using micro-Brillouin light scattering microscopy. On short time scales, where the auto-oscillation linewidth Formula: see text is governed by white noise, the signal quality factor, Formula: see text, increases linearly with the number of mutually synchronized nano-constrictions (N), reaching 170,000 in the largest arrays. We also show that SHNO arrays exposed to two independently tuned microwave frequencies exhibit the same synchronization maps as can be used for neuromorphic vowel recognition. Our demonstrations may hence enable the use of SHNO arrays in two-dimensional oscillator networks for high-quality microwave signal generation and ultra-fast neuromorphic computing.
Synchronization of large spin Hall nano-oscillator (SHNO) arrays is an appealing approach toward ultrafast non-conventional computing. However, interfacing to the array, tuning its individual ...oscillators and providing built-in memory units remain substantial challenges. Here, we address these challenges using memristive gating of W/CoFeB/MgO/AlO
-based SHNOs. In its high resistance state, the memristor modulates the perpendicular magnetic anisotropy at the CoFeB/MgO interface by the applied electric field. In its low resistance state the memristor adds or subtracts current to the SHNO drive. Both electric field and current control affect the SHNO auto-oscillation mode and frequency, allowing us to reversibly turn on/off mutual synchronization in chains of four SHNOs. We also demonstrate that two individually controlled memristors can be used to tune a four-SHNO chain into differently synchronized states. Memristor gating is therefore an efficient approach to input, tune and store the state of SHNO arrays for non-conventional computing models.
Mutual synchronization of N serially connected spintronic nano-oscillators boosts their coherence by N and peak power by N 2. Increasing the number of synchronized nano-oscillators in chains holds ...significance for improved signal quality and emerging applications such as oscillator based unconventional computing. We successfully fabricate spin Hall nano-oscillator chains with up to 50 serially connected nanoconstrictions using W/NiFe, W/CoFeB/MgO, and NiFe/Pt stacks. Our experiments demonstrate robust and complete mutual synchronization of 21 nanoconstrictions at an operating frequency of 10 GHz, achieving line widths <134 kHz and quality factors >79,000. As the number of mutually synchronized oscillators increases, we observe a quadratic increase in peak power, resulting in 400-fold higher peak power in long chains compared to individual nanoconstrictions. While chains longer than 21 nanoconstrictions also achieve complete mutual synchronization, it is less robust, and their signal quality does not improve significantly, as they tend to break into partially synchronized states.
Magnonics addresses the physical properties of spin waves and utilizes them for data processing. Scalability down to atomic dimensions, operation in the GHz-to-THz frequency range, utilization of ...nonlinear and nonreciprocal phenomena, and compatibility with CMOS are just a few of many advantages offered by magnons. Although magnonics is still primarily positioned in the academic domain, the scientific and technological challenges of the field are being extensively investigated, and many proof-of-concept prototypes have already been realized in laboratories. This roadmap is a product of the collective work of many authors, which covers versatile spin-wave computing approaches, conceptual building blocks, and underlying physical phenomena. In particular, the roadmap discusses the computation operations with the Boolean digital data, unconventional approaches, such as neuromorphic computing, and the progress toward magnon-based quantum computing. This article is organized as a collection of sub-sections grouped into seven large thematic sections. Each sub-section is prepared by one or a group of authors and concludes with a brief description of current challenges and the outlook of further development for each research direction.
We investigate a W-Ta alloying route to reduce the auto-oscillation threshold current densities and the power consumption of nanoconstriction based spin Hall nano-oscillators. Using spin-torque ...ferromagnetic resonance measurements on microbars of W100-xTax(5 nm)/Co-Fe-B(t)/MgO stacks with t=1.4, 1.8, and 2.0 nm, we measure a substantial improvement in both the spin-orbit torque efficiency and the spin Hall conductivity. We demonstrate a 34% reduction in auto-oscillation threshold current density, which translates into a 64% reduction in power consumption as compared with pure W-based spin Hall nano-oscillators. Our work demonstrates the promising aspects of W-Ta alloying for the energy-efficient operation of emerging spintronic devices.
Using surface x-ray diffraction and scanning tunneling microscopy in combination with first-principles calculations, we have studied the geometric and electronic structure of Cs-deposited ...Bi2Se3(0001) surface kept at room temperature. Two samples were investigated: a single Bi2Se3 crystal, whose surface was Ar sputtered and then annealed at ~500∘C for several minutes prior to Cs deposition, and a 13-nm-thick epitaxial Bi2Se3 film that was not subject to sputtering and was annealed only at ~350∘C. In the first case, a considerable fraction of Cs atoms occupy top layer Se atoms sites both on the terraces and along the upper step edges where they form one-dimensional-like structures parallel to the step. In the second case, Cs atoms occupy the fcc hollow site positions. First-principles calculations reveal that Cs atoms prefer to occupy Se positions on the Bi2Se3(0001) surface only if vacancies are present, which might be created during the crystal growth or during the surface preparation process. Otherwise, Cs atoms prefer to be located in fcc hollow sites in agreement with the experimental finding for the MBE-grown sample.
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