The unique properties of CVD diamond make it a compelling choice for high power electronics. In order to achieve industrial use of CVD diamond, one must simultaneously obtain an excellent control of ...the film purity, very low defect content and a sufficiently rapid growth rate. Currently, only microwave plasma-assisted chemical vapour deposition (MPACVD) processes making use of resonant cavity systems provide enough atomic hydrogen to satisfy these requirements. We show in this paper that the use of high microwave power density (MWPD) plasmas is necessary to promote atomic hydrogen concentrations that are high enough to ensure the deposition of high purity diamond films at large growth rates. Moreover, the deposition of homogeneous films on large surfaces calls for the production of plasma with appropriate shapes and large volumes. The production of such plasmas needs generating a fairly high electric field over extended regions and requires a careful design of the MW coupling system, especially the cavity. As far as MW coupling efficiency is concerned, the presence of a plasma load represents a mismatching perturbation to the cavity. This perturbation is especially important at high MWPD where the reflected fraction of the input power may be quite high. This mismatch can lead to a pronounced heating of the reactor walls. It must therefore be taken into account from the very beginning of the reactor design. This requires the implementation of plasma modelling tools coupled to detailed electromagnetic simulations. This is discussed in section 3. We also briefly discuss the operating principles of the main commercial plasma reactors before introducing the reactor design methodology we have developed. Modelling results for a new generation of reactors developed at LIMHP, working at very high power density, will be presented. Lastly, we show that scaling up this type of reactor to lower frequencies (915 MHz) can result in high density plasmas allowing for fast and homogeneous diamond deposition on up to 160 mm diameter surfaces.
This work focuses on the production of negative-ions on graphite and diamond surfaces bombarded by positive ions in a low pressure (2 Pa) low power (20 W) capacitively coupled deuterium plasma. A ...sample is placed opposite a mass spectrometer and negatively biased so that surface produced negative ions can be self-extracted from the plasma and measured by the mass spectrometer. The ratio between negative-ion counts at mass spectrometer and positive ion current at sample surface defines a relative negative-ion yield. Changes in negative-ion production yields versus positive ion energy in the range 10-60 eV are analysed. While the negative-ion production yield is decreasing for diamond surfaces when increasing the positive ion impact energy, it is strongly increasing for graphite. This increase is attributed to the onset of the sputtering mechanisms between 20 and 40 eV which creates negative ions at rather low energy that are efficiently collected by the mass spectrometer. The same mechanism occurs for diamond but is mitigated by a strong decrease of the ionization probability due to defect creation and loss of diamond electronic properties.
H2/O2 plasma treatments offer advantages over other etching processes of diamond as a technique to prepare the substrate surface prior to chemical vapor deposition (CVD) diamond growth. It allows ...removing defects induced on the surface by polishing, thus leading to an improved morphology and limiting the stress within the grown crystal. Moreover, they present the advantage to be performed in situ just before the CVD diamond growth. In this work, H2/O2 plasma treatments were performed so that threading dislocations and other defects are etched preferentially, thus leaving typical etch‐pits. The defect densities in several high pressure high temperature (HPHT) and CVD diamond crystals were then quantified and compared; in particular defects originating from polishing could be distinguished from extended defects inside the crystal. Furthermore, the defect density was found to be of the order of 105/cm2 for HPHT crystals, which was approximately one order of magnitude lower than that measured in low cost commercial CVD monocrystals. The use of laser microscopy also allowed observing the morphology, size and depth of different etch‐pits of 〈001〉‐oriented and misoriented crystals and their evolution with etching time in order to get a better understanding of defect density and formation during CVD growth.
The growth of monocrystalline diamond films of electronic quality and large thickness ( > few hundreds of microns) is an important issue in particular for high-power electronics. In this paper, we ...will describe the different key parameters necessary to reach this objective. First, we will examine the deposition process and establish that only microwave assisted diamond deposition plasma reactors can achieve the optimal growth conditions for the efficient generation of the precursor species to diamond growth. Next, we will consider the influence of the monocrystalline diamond substrate orientation and quality on the growth of the epitaxial layer, especially when the deposited material thickness exceeds 100 mum. The need to use a specific pre-treatment procedure of the substrate before the growth and its impact will also be discussed. Finally we will look at the growth conditions themselves and assess the influence of the process parameters, such as the substrate temperature, the methane concentration, the microwave power density and the eventual presence of nitrogen in the gas phase, on both the morphology and quality of the films on the one hand and the growth rate on the other hand. For this, we will introduce the concept of supersaturation and comment on its evolution as a function of the process parameters.
Candida spp. are responsible for severe infections in immunocompromised patients and those undergoing invasive procedures. The accurate identification of Candida species is important because emerging ...species can be associated with various antifungal susceptibility spectra. Conventional methods have been developed to identify the most common pathogens, but have often failed to identify uncommon species. Several studies have reported the efficiency of matrix-assisted laser desorption ionization-time of flight mass spectrometry (MALDI-TOF MS) for the identification of clinically relevant Candida species. In this study, we evaluated two commercially available MALDI-TOF systems, Andromas™ and Bruker Biotyper™, for Candida identification in routine diagnosis. For this purpose, we investigated 1383 Candida isolates prospectively collected in eight hospital laboratories during routine practice. MALDI-TOF MS results were compared with those obtained using conventional phenotypic methods. Analysis of rDNA gene sequences with internal transcribed regions or D1-D2 regions is considered the reference standard for identification. Both MALDI-TOF MS systems could accurately identify 98.3% of the isolates at the species level (1359/1383 for Andromas™; 1360/1383 for Bruker Biotyper™) vs. 96.5% for conventional techniques. Furthermore, whereas conventional methods failed to identify rare or emerging species, these were correctly identified by MALDI-TOF MS. Both MALDI-TOF MS systems are accurate and cost-effective alternatives to conventional methods for mycological identification of clinically relevant Candida species and should improve the diagnosis of fungal infections as well as patient management.
We present OSIRIS/NAC observations of decimetre-sized, likely ice-containing aggregates ejected from a confined region on the surface of comet 67P/Churyumov-Gerasimenko. The images were obtained in ...January 2016 when the comet was at 2 AU from the Sun out-bound from perihelion. We measure the acceleration of individual aggregates through a two-hour image series. Approximately 50% of the aggregates are accelerated away from the nucleus, and 50% towards it, and likewise towards either horizontal direction. The accelerations are up to one order of magnitude stronger than local gravity, and are most simply explained by the combined effect of gas drag accelerating all aggregates upwards, and the recoil force from asymmetric outgassing, either from rotating aggregates with randomly oriented spin axes and sufficient thermal inertia to shift the temperature maximum away from an aggregate's subsolar region, or from aggregates with variable ice content. At least 10% of the aggregates will escape the gravity field of the nucleus and feed the comet's debris trail, while others may fall back to the surface and contribute to the deposits covering parts of the northern hemisphere. The rocket force plays a crucial role in pushing these aggregates back towards the surface. Our observations show the future back fall material in the process of ejection, and provide the first direct measurement of the acceleration of aggregates in the innermost coma (<2km) of a comet, where gas drag is still significant.
The development of diamond power electronic devices based on p–n junctions strongly relies on the ability to achieve efficient n-type doping which has so far been the limiting step. (111)-oriented ...diamond films offer the advantage of a higher activity and incorporation of dopants. In this respect, growing high-quality films by Plasma Assisted Chemical Vapour Deposition (PACVD) on this orientation is critical. Other applications such as those based on nitrogen-vacancy (NV) centres could also benefit from the availability of high-quality (111)-oriented substrates. Due to the preferential orientation of the NV bond along the direction, higher emission intensity and easier alignment of the magnetic field are expected. However (111) CVD films are plagued by twinning and defects that are easily formed on this orientation. Good quality (111) CVD films have been obtained but only for low thicknesses (<1μm) and at extremely low growth rates.
In this paper, diamond growth was carried out by high power PACVD on (111)-oriented high pressure high temperature substrates prepared from octahedral-shape crystals. It was found that under conditions of high temperature and low methane concentration, the growth rate in the direction is almost completely inhibited which ensures that penetration twins cannot develop. In this case smooth films with a thickness over 100μm were successfully obtained at 6μm/h. Although the crystalline quality is still below that of conventional (100) CVD films, the growth of such thick (111) CVD films opens the way to their integration into electronics applications.
Low defect thick (111) CVD diamond film obtained under low α value (microscope and luminescence images). Display omitted
•High-power PACVD growth was carried out on (111) HPHT substrates prepared form octahedral-shape crystals.•Smooth films up to 100μm thick were successfully obtained at 6μm/h for the first time.•Under high temperature and low methane concentration (low alpha) twinning is efficiently inhibited.•Thick (111) CVD films showed low impurity concentration by photoluminescence.•Cathodoluminescence showed a reduced crystalline quality compared to films grown on conventional (100) orientation.
ABSTRACT The Wide Angle Camera of the OSIRIS instrument on board the Rosetta spacecraft is equipped with several narrow-band filters that are centered on the emission lines and bands of various ...fragment species. These are used to determine the evolution of the production and spatial distribution of the gas in the inner coma of comet 67P with time and heliocentric distance, here between 2.6 and 1.3 au pre-perihelion. Our observations indicate that the emission observed in the OH, O i, CN, NH, and NH2 filters is mostly produced by dissociative electron impact excitation of different parent species. We conclude that CO2 rather than H2O is a significant source of the O i 630 nm emission. A strong plume-like feature observed in the CN and O i filters is present throughout our observations. This plume is not present in OH emission and indicates a local enhancement of the CO2/H2O ratio by as much as a factor of 3. We observed a sudden decrease in intensity levels after 2015 March, which we attribute to decreased electron temperatures in the first few kilometers above the surface of the nucleus.