Since few years, our group is developing a family of ASICs for space applications, named IDeF-X for Imaging Detector Front-end. IDeF-X HD is the new member of the IDeF-X family. It has been optimized ...for the readout of 16 x 16 pixels CdTe or CdZnTe pixelated detectors to build a new low power Caliste 256 module. This micro gamma-camera will be the elementary unit of the MAC SI (Modular Assembly of Caliste Spectro Imager) camera: A 2048-pixels 8 cm 2 gamma camera designed with 8 identical Caliste modules.
In this paper we report on the timing resolution obtained in a beam test with pions of 180 GeV/c momentum at CERN for the first production of 45 μm thick Ultra-Fast Silicon Detectors (UFSD). UFSD are ...based on the Low- Gain Avalanche Detector (LGAD) design, employing n-on-p silicon sensors with internal charge multiplication due to the presence of a thin, low-resistivity diffusion layer below the junction. The UFSD used in this test had a pad area of 1.7 mm2. The gain was measured to vary between 5 and 70 depending on the sensor bias voltage. The experimental setup included three UFSD and a fast trigger consisting of a quartz bar readout by a SiPM. The timing resolution was determined by doing Gaussian fits to the time-of-flight of the particles between one or more UFSD and the trigger counter. For a single UFSD the resolution was measured to be 34 ps for a bias voltage of 200 V, and 27 ps for a bias voltage of 230 V. For the combination of 3 UFSD the timing resolution was 20 ps for a bias voltage of 200 V, and 16 ps for a bias voltage of 230 V.
Ultra-fast silicon detectors (UFSD) Sadrozinski, H.F.-W.; Anker, A.; Chen, J. ...
Nuclear instruments & methods in physics research. Section A, Accelerators, spectrometers, detectors and associated equipment,
09/2016, Letnik:
831, Številka:
C
Journal Article
Recenzirano
Odprti dostop
We report on measurements on Ultra-Fast Silicon Detectors (UFSD) which are based on Low-Gain Avalanche Detectors (LGAD). They are n-on-p sensors with internal charge multiplication due to the ...presence of a thin, low-resistivity diffusion layer below the junction, obtained with a highly doped implant. We have performed several beam tests with LGAD of different gain and report the measured timing resolution, comparing it with laser injection and simulations. For the 300μm thick LGAD, the timing resolution measured at test beams is 120ps while it is 57ps for IR laser, in agreement with simulations using Weightfield2. For the development of thin sensors and their readout electronics, we focused on the understanding of the pulse shapes and point out the pivotal role the sensor capacitance plays.
The SAMpler for PICosecond time (SAMPIC) chip has been designed by a collaboration including CEA/IRFU/SEDI, Saclay and CNRS/LAL/SERDI, Orsay. It benefits from both the quick response of a time to ...digital converter and the versatility of a waveform digitizer to perform accurate timing measurements. Thanks to the sampled signals, smart algorithms making best use of the pulse shape can be used to improve time resolution. A software framework has been developed to analyse the SAMPIC output data and extract timing information by using either a constant fraction discriminator or a fast cross-correlation algorithm. SAMPIC timing capabilities together with the software framework have been tested using pulses generated by a signal generator or by a silicon detector illuminated by a pulsed infrared laser. Under these ideal experimental conditions, the SAMPIC chip has proven to be capable of timing resolutions down to 4ps with synthesized signals and 40ps with silicon detector signals.
Tracking in 4 dimensions Cartiglia, N.; Arcidiacono, R.; Baldassarri, B. ...
Nuclear instruments & methods in physics research. Section A, Accelerators, spectrometers, detectors and associated equipment,
02/2017, Letnik:
845, Številka:
C
Journal Article
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In this contribution we will review the progresses toward the construction of a tracking system able to measure the passage of charged particles with a combined precision of ∼10ps and ∼10μm, either ...using a single type of sensor, able to concurrently measure position and time, or a combination of position and time sensors.
RF strip-line anodes for Psec large-area MCP-based photodetectors Grabas, Hervé; Obaid, Razib; Oberla, Eric ...
Nuclear instruments & methods in physics research. Section A, Accelerators, spectrometers, detectors and associated equipment,
2013, Letnik:
711
Journal Article
Recenzirano
We have designed and tested economical large-area RF strip-line anodes made by silk-screening silver onto inexpensive plate glass, for use in microchannel plate photodetectors to provide measurements ...of time, position, integrated charge, and pulse waveform shapes. The 229-mm-long anodes are modular, and can be attached in series for economy in electronics channel-count. Measurements of the anode impedance, bandwidth and cross-talk due to inter-strip coupling are presented. The analog bandwidth, a key determinant of timing resolution, decreases from 1.6GHz to 0.4GHz as the anode length increases from 289mm to 916mm.
For the high luminosity upgrade of the LHC at CERN, ATLAS is considering the addition of a High Granularity Timing Detector (HGTD) in front of the end cap and forward calorimeters at |z|=3.5 m and ...covering the region 2.4<|η|<4 to help reducing the effect of pile-up. The chosen sensors are arrays of 50μm thin Low Gain Avalanche Detectors (LGAD). This paper presents results on single LGAD sensors with a surface area of 1.3×1.3 mm2 and arrays with 2×2 pads with a surface area of 2×2 mm2 or 3×3 mm2 each and different implant doses of the p+ multiplication layer. They are obtained from data collected during a beam test campaign in autumn 2016 with a pion beam of 120 GeV energy at the CERN SPS. In addition to several quantities measured inclusively for each pad, the gain, efficiency and time resolution have been estimated as a function of the position of the incident particle inside the pad by using a beam telescope with a position resolution of few μm. Different methods to measure the time resolution are compared, yielding consistent results. The sensors with a surface area of 1.3×1.3 mm2 have a time resolution of about 40 ps for a gain of 20 and of about 27 ps for a gain of 50 and fulfil the HGTD requirements. Larger sensors have, as expected, a degraded time resolution. All sensors show very good efficiency and time resolution uniformity.
Study of CMOS strip sensor for future silicon tracker Han, Y.; Zhu, H.; Affolder, A. ...
Nuclear instruments & methods in physics research. Section A, Accelerators, spectrometers, detectors and associated equipment,
08/2020, Letnik:
981
Journal Article
Recenzirano
Odprti dostop
Monolithic silicon sensors developed with High-Voltage CMOS (HV-CMOS) processes have become highly attractive for charged particle tracking. Compared with the standard CMOS sensors, HV-CMOS sensors ...can provide larger and deeper depletion regions that lead to larger signals and faster charge collection. They can provide high position resolution, low material budget, high radiation hardness and low cost that are desirable for high performance tracking in harsh collision environment. Various studies have been conducted to explore the technology feasibility for the large-area tracking systems at future collider experiments. CHESS (CMOS HV/HR Evaluation for Strip Sensor) sensor series have been developed as an alternative solution to the conventional silicon micro-strip detectors for the ATLAS inner tracker upgrade. The first prototype (named CHESS1) was to evaluate the diode geometry and the in-pixel analog electronics. Obtained test results were used to optimize the second prototype (named CHESS2). CHESS2 was implemented with a full digital readout architecture and realized as a full reticle sized monolithic sensor. Here, the basic characteristics of the CHESS2 prototype sensors and their performance in response to different input signals are presented.
Charge collection properties of particle detectors made in HV-CMOS technology were investigated before and after irradiation with reactor neutrons. Two different sensor types were designed and ...processed in 180 and 350 nm technology by AMS. Edge-TCT and charge collection measurements with electrons from super(90)Sr source were employed. Diffusion of generated carriers from undepleted substrate contributes significantly to the charge collection before irradiation, while after irradiation the drift contribution prevails as shown by charge measurements at different shaping times. The depleted region at a given bias voltage was found to grow with irradiation in the fluence range of interest for strip detectors at the HL-LHC. This leads to large gains in the measured charge with respect to the one before irradiation. The increase of the depleted region was attributed to removal of effective acceptors. The evolution of depleted region with fluence was investigated and modeled. Initial studies show a small effect of short term annealing on charge collection.
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