Abstract
When electric conductors differ from their mirror image, unusual chiral transport coefficients appear that are forbidden in achiral metals, such as a non-linear electric response known as ...electronic magnetochiral anisotropy (eMChA)
1–6
. Although chiral transport signatures are allowed by symmetry in many conductors without a centre of inversion, they reach appreciable levels only in rare cases in which an exceptionally strong chiral coupling to the itinerant electrons is present. So far, observations of chiral transport have been limited to materials in which the atomic positions strongly break mirror symmetries. Here, we report chiral transport in the centrosymmetric layered kagome metal CsV
3
Sb
5
observed via second-harmonic generation under an in-plane magnetic field. The eMChA signal becomes significant only at temperatures below
$${T}^{{\prime} }\approx $$
T
′
≈
35 K, deep within the charge-ordered state of CsV
3
Sb
5
(
T
CDW
≈ 94 K). This temperature dependence reveals a direct correspondence between electronic chirality, unidirectional charge order
7
and spontaneous time-reversal symmetry breaking due to putative orbital loop currents
8–10
. We show that the chirality is set by the out-of-plane field component and that a transition from left- to right-handed transport can be induced by changing the field sign. CsV
3
Sb
5
is the first material in which strong chiral transport can be controlled and switched by small magnetic field changes, in stark contrast to structurally chiral materials, which is a prerequisite for applications in chiral electronics.
Previous band structure calculations predicted Ag3AuSe2 to be a semiconductor with a band gap of approximately 1 eV. Here, we report single crystal growth of Ag3AuSe2 and its transport and optical ...properties. Single crystals of Ag3AuSe2 were synthesized by slow‐cooling from the melt, and grain sizes were confirmed to be greater than 2 mm using electron backscatter diffraction. Optical and transport measurements reveal that Ag3AuSe2 is a highly resistive semiconductor with a band gap and activation energy around 0.3 eV. Our first‐principles calculations show that the experimentally determined band gap lies between the predicted band gaps from GGA and hybrid functionals. We predict band inversion to be possible by applying tensile strain. The sensitivity of the gap to Ag/Au ordering, chemical substitution, and heat treatment merit further investigation.
Abstract The kagome metals AV 3 Sb 5 (A = K, Rb, Cs) present an ideal sandbox to study the interrelation between multiple coexisting correlated phases such as charge order and superconductivity. So ...far, no consensus on the microscopic nature of these states has been reached as the proposals struggle to explain all their exotic physical properties. Among these, field-switchable electric magneto-chiral anisotropy (eMChA) in CsV 3 Sb 5 provides intriguing evidence for a rewindable electronic chirality, yet the other family members have not been likewise investigated. Here, we present a comparative study of magneto-chiral transport between CsV 3 Sb 5 and KV 3 Sb 5 . Despite their similar electronic structure, KV 3 Sb 5 displays negligible eMChA, if any, and with no field switchability. This is in stark contrast to the non-saturating eMChA in CsV 3 Sb 5 even in high fields up to 35 T. In light of their similar band structures, the stark difference in eMChA suggests its origin in the correlated states. Clearly, the V kagome nets alone are not sufficient to describe the physics and the interactions with their environment are crucial in determining the nature of their low-temperature state.
One-dimensional (1D) systems persist as some of the most interesting because of the rich physics that emerges from constrained degrees of freedom. A desirable route to harness the properties therein ...is to grow bulk single crystals of a physically three-dimensional (3D) but electronically 1D compound. Most bulk compounds which approach the electronic 1D limit still field interactions across the other two crystallographic directions and, consequently, deviate from the 1D models. In this paper, we lay out chemical concepts to realize the physics of 1D models in 3D crystals. These are based on both structural and electronic arguments. We present BiIr4Se8, a bulk crystal consisting of linear Bi2+ chains within a scaffolding of IrSe6 octahedra, as a prime example. Through crystal structure analysis, density functional theory calculations, X-ray diffraction, and physical property measurements, we demonstrate the unique 1D electronic configuration in BiIr4Se8. This configuration at ambient temperature is a gapped Su-Schriefer-Heeger system, generated by way of a canonical Peierls distortion involving Bi dimerization that relieves instabilities in a 1D metallic state. At 190 K, an additional 1D charge density wave distortion emerges, which affects the Peierls distortion. The experimental evidence validates our design principles and distinguishes BiIr4Se8 among other quasi-1D bulk compounds. We thus show that it is possible to realize unique electronically 1D materials applying chemical concepts.
One-dimensional (1D) systems persist as some of the most interesting because of the rich physics that emerges from constrained degrees of freedom. A desirable route to harness the properties therein ...is to grow bulk single crystals of a physically three-dimensional (3D) but electronically 1D compound. Most bulk compounds which approach the electronic 1D limit still field interactions across the other two crystallographic directions and, consequently, deviate from the 1D models. In this paper, we lay out chemical concepts to realize the physics of 1D models in 3D crystals. These are based on both structural and electronic arguments. We present BiIr
Se
, a bulk crystal consisting of linear Bi
chains within a scaffolding of IrSe
octahedra, as a prime example. Through crystal structure analysis, density functional theory calculations, X-ray diffraction, and physical property measurements, we demonstrate the unique 1D electronic configuration in BiIr
Se
. This configuration at ambient temperature is a gapped Su-Schriefer-Heeger system, generated by way of a canonical Peierls distortion involving Bi dimerization that relieves instabilities in a 1D metallic state. At 190 K, an additional 1D charge density wave distortion emerges, which affects the Peierls distortion. The experimental evidence validates our design principles and distinguishes BiIr
Se
among other quasi-1D bulk compounds. We thus show that it is possible to realize unique electronically 1D materials applying chemical concepts.
Abstract
Previous band structure calculations predicted Ag
3
AuSe
2
to be a semiconductor with a band gap of approximately 1 eV. Here, we report single crystal growth of Ag
3
AuSe
2
and its transport ...and optical properties. Single crystals of Ag
3
AuSe
2
were synthesized by slow‐cooling from the melt, and grain sizes were confirmed to be greater than 2 mm using electron backscatter diffraction. Optical and transport measurements reveal that Ag
3
AuSe
2
is a highly resistive semiconductor with a band gap and activation energy around 0.3 eV. Our first‐principles calculations show that the experimentally determined band gap lies between the predicted band gaps from GGA and hybrid functionals. We predict band inversion to be possible by applying tensile strain. The sensitivity of the gap to Ag/Au ordering, chemical substitution, and heat treatment merit further investigation.
