Plasmonics provides a possible route to overcome both the speed limitations of electronics and the critical dimensions of photonics. We present an all-plasmonic 116–gigabits per second ...electro-optical modulator in which all the elements—the vertical grating couplers, splitters, polarization rotators, and active section with phase shifters—are included in a single metal layer. The device can be realized on any smooth substrate surface and operates with low energy consumption. Our results show that plasmonics is indeed a viable path to an ultracompact, highest-speed, and low-cost technology that might find many applications in a wide range of fields of sensing and communications because it is compatible with and can be placed on a wide variety of materials.
For nearly two decades, researchers in the field of plasmonics
-which studies the coupling of electromagnetic waves to the motion of free electrons near the surface of a metal
-have sought to realize ...subwavelength optical devices for information technology
, sensing
, nonlinear optics
, optical nanotweezers
and biomedical applications
. However, the electron motion generates heat through ohmic losses. Although this heat is desirable for some applications such as photo-thermal therapy, it is a disadvantage in plasmonic devices for sensing and information technology
and has led to a widespread view that plasmonics is too lossy to be practical. Here we demonstrate that the ohmic losses can be bypassed by using 'resonant switching'. In the proposed approach, light is coupled to the lossy surface plasmon polaritons only in the device's off state (in resonance) in which attenuation is desired, to ensure large extinction ratios between the on and off states and allow subpicosecond switching. In the on state (out of resonance), destructive interference prevents the light from coupling to the lossy plasmonic section of a device. To validate the approach, we fabricated a plasmonic electro-optic ring modulator. The experiments confirm that low on-chip optical losses, operation at over 100 gigahertz, good energy efficiency, low thermal drift and a compact footprint can be combined in a single device. Our result illustrates that plasmonics has the potential to enable fast, compact on-chip sensing and communications technologies.
Coherent optical communications provides the largest data transmission capacity with the highest spectral efficiency and therefore has a remarkable potential to satisfy today's ever-growing bandwidth ...demands. It relies on so-called in-phase/quadrature (IQ) electro-optic modulators that encode information on both the amplitude and the phase of light. Ideally, such IQ modulators should offer energy-efficient operation and a most compact footprint, which would allow high-density integration and high spatial parallelism. Here, we present compact IQ modulators with an active section occupying a footprint of 4 × 25 µm × 3 µm, fabricated on the silicon platform and operated with sub-1-V driving electronics. The devices exhibit low electrical energy consumptions of only 0.07 fJ bit
at 50 Gbit s
, 0.3 fJ bit
at 200 Gbit s
, and 2 fJ bit
at 400 Gbit s
. Such IQ modulators may pave the way for application of IQ modulators in long-haul and short-haul communications alike.
The performance of highly nonlinear organic electro-optic (EO) materials incorporated into nanoscale slots is examined. It is shown that EO coefficients as large as 190 pm/V can be obtained in 150 nm ...wide plasmonic slot waveguides but that the coefficients decrease for narrower slots. Possible mechanism that lead to such a decrease are discussed. Monte-Carlo computer simulations are performed, confirming that chromophore-surface interactions are one important factor influencing the EO coefficient in narrow plasmonic slots. These highly nonlinear materials are of particular interest for applications in optical modulators. However, in modulators the key parameters are the voltage-length product U
L and the insertion loss rather than the linear EO coefficients. We show record-low voltage-length products of 70 Vµm and 50 Vµm for slot widths in the order of 50 nm for the materials JRD1 and DLD164, respectively. This is because the nonlinear interaction is enhanced in narrow slot and thereby compensates for the reduced EO coefficient. Likewise, it is found that lowest insertion losses are observed for slot widths in the range 60 to 100 nm.
A scheme for the direct conversion of millimeter and THz waves to optical signals is introduced. The compact device consists of a plasmonic phase modulator that is seamlessly cointegrated with an ...antenna. Neither high-speed electronics nor electronic amplification is required to drive the modulator. A built-in enhancement of the electric field by a factor of 35 000 enables the direct conversion of millimeter-wave signals to the optical domain. This high enhancement is obtained via a resonant antenna that is directly coupled to an optical field by means of a plasmonic modulator. The suggested concept provides a simple and cost-efficient alternative solution to conventional schemes where millimeter-wave signals are first converted to the electrical domain before being up-converted to the optical domain.
Electrically Controlled Plasmonic Switches and Modulators Emboras, Alexandros; Hoessbacher, Claudia; Haffner, Christian ...
IEEE journal of selected topics in quantum electronics,
2015-July-Aug., 2015-7-00, Letnik:
21, Številka:
4
Journal Article
Recenzirano
Plasmonic modulators and switches have recently attracted considerable attention because they offer ultracompact size, high bandwidths, and potentially low-power consumption. In this paper, we review ...and compare the current state of the art of plasmonic switches and discuss the various physical phenomena that are used to perform efficient switching. More precisely, we discuss plasmonic devices based on the thermal effect, the free carrier dispersion effect, the Pockels effect, phase change materials and switching caused by electrochemical metallization.
Broadband electro-optic intensity modulators are essential to convert electrical signals to the optical domain. The growing interest in terahertz wireless applications demands modulators with ...frequency responses to the sub-terahertz range, high power handling, and very low nonlinear distortions, simultaneously. However, a modulator with all those characteristics has not been demonstrated to date. Here, we experimentally demonstrate that plasmonic modulators do not trade-off any performance parameter, featuring—at the same time—a short length of tens of micrometers, record-high flat frequency response beyond 500 GHz, high power handling, and high linearity, and we use them to create a sub-terahertz radio-over-fiber analog optical link. These devices have the potential to become a new tool in the general field of microwave photonics, making the sub-terahertz range accessible to, e.g., 5G wireless communications, antenna remoting, Internet of Things, sensing, and more.
Complementing plasmonic slot waveguides with highly nonlinear organic materials has rendered a new generation of ultracompact active nanophotonic components that are redefining the state of the art. ...In this paper, we review the fundamentals of this so-called plasmonic- organic-hybrid (POH) platform. Starting from simple phase shifters to the most compact IQ modulators, we introduce key devices of high-speed data communications. For instance, all-plasmonic Mach-Zehnder modulators (MZMs) are reviewed and long-term prospects are discussed. This kind of modulator already features unique properties such as a small footprint (<; 20 μm 2 ), a large electro-optic bandwidth (> 110 GHz), a small energy consumption (~25 fJ/b), a large extinction ratio (> 25 dB) in combination with a record small voltage-length product of 40 Vμm. Finally, as an example for seamless integration we introduce novel plasmonic IQ modulators. With such modulators we show the generation of advanced modulation formats (QPSK, 16-QAM) on footprints as small as 10 μm × 75 μm. This demonstration ultimately shows how plasmonics can be used to control both phase and amplitude of an optical carrier on the microscale with reasonably low losses.
Chip-scale integration of electronics and photonics is recognized as important to the future of information technology, as is the exploitation of the best properties of electronics, photonics, and ...plasmonics to achieve this objective. However, significant challenges exist including matching the sizes of electronic and photonic circuits; achieving low-loss transition between electronics, photonics, and plasmonics; and developing and integrating new materials. This review focuses on a hybrid material approach illustrating the importance of both chemical and engineering concepts. Silicon–organic hybrid (SOH) and plasmonic–organic hybrid (POH) technologies have permitted dramatic improvements in electro-optic (EO) performance relevant to both digital and analog signal processing. For example, the voltage–length product of devices has been reduced to less than 40 Vμm, facilitating device footprints of <20 μm2 operating with digital voltage levels to frequencies above 170 GHz. Energy efficiency has been improved to around a femtojoule/bit. This improvement has been realized through exploitation of field enhancements permitted by new device architectures and through theory-guided improvements in organic electro-optic (OEO) materials. Multiscale theory efforts have permitted quantitative simulation of the dependence of OEO activity on chromophore structure and associated intermolecular interactions. This has led to new classes of OEO materials, including materials of reduced dimensionality and neat (pure) chromophore materials that can be electrically poled. Theoretical simulations have helped elucidate the observed dependence of device performance on nanoscopic waveguide dimensions, reflecting the importance of material interfaces. The demonstration and explanation of the dependence of in-device electro-optic activity, voltage–length product, and optical insertion loss on device architecture (e.g., slot width) suggest new paradigms for further dramatic improvement of performance.
In this study, we investigate the changes in the crystalline structure of MBE-deposited SrTiO3 layers on Si with different deviations from Sr/Ti stoichiometry as deposited but also after annealing at ...high temperatures (>600 °C). We show that as-grown 15 nm thick non-stochiometric SrTiO3 layers present surprisingly lower FWHM values of the (002) omega diffraction peak compared to fully stoichiometric layers of similar thickness. This can misleadingly point to superior crystalline quality of such non-stochiometric layers. However, thermal post-deposition anneals of these layers at temperatures up to 850 °C in oxygen show strong detrimental effects on the crystalline structure, surface and interface with the Si (001) substrate. On the contrary, the post-deposition anneals applied to the stoichiometric samples strongly improve the physical, optical and electrical properties of the epitaxial SrTiO3 thin films.
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