This paper presents new results on the deposition technique and the characterization of thin (ZrO2)x(Al2O3)1‐x layers on silicon. The layers were deposited using the chemical solution deposition ...method on silicon substrates, and they were then subjected to different temperature treatments. For comparison, pure ZrO2 layers were deposited, too. The chemical composition of (ZrO2)x(Al2O3)1‐x layers is determined by Rutherford Back Scattering. The morphology was studied by HRSEM. The addition of Al2O3 makes the layers structurally more homogeneous as compared to those of pure ZrO2. The electric properties of MIS structures were studied. A fixed negative charge and the high dielectric constants are characteristic for these layers. The experimental results are discussed in the context of using them as high‐k dielectrics.
Quasistatic Cq, pulse Ch and 1 MHz C‐V curves of a MIS structure with a (ZrO2)x(Al2O3)1‐x film deposited on a silicon wafer and Hg dots.
An interesting opportunity arises when two or more oxides are used as alloys in an attempt to combine the desirable properties of several materials. These systems are predominantly ...non‐stoichiometric, and in the case of two oxides, they are called pseudobinary alloys. Varying the ratio of the two oxides, thin films with certain preset characteristics can be obtained—refractive index, energy band gap, dielectric constants etc. Our investigations were focussed on spin‐coated (Al2O3)x(TiO2)1 − x films. The electrical properties of (Al2O3)x(TiO2)1 − x were studied forming MIS structures. For accurate determinations of the dielectric constant various measurement methods were used: classical C‐V, impedance spectroscopy and CV map B instrument. The effect of adding Al2O3 to TiO2 is to produce an amorphous dielectric film, which is thermodynamically stable on Si.
C‐V curves at 1 MHz of MIS structures with PBA (Al2O3)x(TiO2)1 − x and ALD Al2O3 film.
Ga-and In co-doped ZnO films have been successfully obtained by sol-gel approach. XRD analysis shows that Zn-In-Ga oxide films possess lower crystallinity compared with the undoped ZnO and ZnO:In ...films. The corresponding XRD lines are broader and less intense. FTIR detailed study of Zn-In-Ga oxides and ZnO shows that Ga and In codoping affects the shapes and the intensity of the absorption bands with no traces of Ga-O and In-O bonds. Optical study shows that the Zn-In-Ga oxide films have improved transparency compared to ZnO and ZnO:In films. The optical band gaps are estimated and discussed.
Morphological study of Sol-Gel derived ZnO:In thin films Ivanova, Tatyana; Harizanova, Antoaneta; Koutzarova, Tatyana ...
2017 40th International Spring Seminar on Electronics Technology (ISSE)
Conference Proceeding, Web Resource
This work presents morphological, structural and optical studies of ZnO and ZnO:In nanostructured thin films depending on In doping (four different concentrations). XRD study of 600°C annealed ZnO:In ...films reveals that crystallization strongly depends on indium concentration. The films are crystallized in wurtzite structure and only for the films with highest In addition, two crystal phases are detected wurtzite ZnO and cubic In 2 O 3 . The AFM investigation reveals that the lowest Root Mean Squared Roughness(RMS) is revealed for ZnO:In 0.5 film (15.96 nm) and the roughness increases up to 64.52 nm for ZnO:In 1. Columnar type structures can be observed in the AFM micrographs of the other two films - ZnO:In 2 and ZnO:In 3, as the columns vary in height and size. The effect of the indium doping into ZnO reveals changing of optical transmittance compared to ZnO film. The optical band gap of ZnO:In films, annealed at 600°C is in the range of 3.06-3.27 eV.
