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zadetkov: 504
491.
Celotno besedilo

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492.
Celotno besedilo
Dostopno za: IJS, NUK, UL, UM
493.
  • A study of smart town devel... A study of smart town development strategies
    Hsieh Hung Nien; Hou Chang Yu; Chia Ping Ching 2011 International Conference on Multimedia Technology, 2011-July
    Conference Proceeding

    Intelligent City is set up innovation environment by people's attendance not only model of technology development but also integrating the networks of communities and knowledge of improvement for ...
Celotno besedilo
Dostopno za: IJS, NUK, UL, UM
494.
  • 5nm-gate nanowire FinFET 5nm-gate nanowire FinFET
    Fu-Liang Yang; Di-Hong Lee; Hou-Yu Chen ... Digest of Technical Papers. 2004 Symposium on VLSI Technology, 2004, 2004
    Conference Proceeding

    A new nanowire FinFET structure is developed for CMOS device scaling into the sub-10 nm regime. Accumulation mode P-FET and inversion mode N-FET with 5 nm and 10 nm physical gate length, ...
Celotno besedilo
Dostopno za: IJS, NUK, UL, UM
495.
  • 3D vertical TaOx/TiO2 RRAM ... 3D vertical TaOx/TiO2 RRAM with over 103 self-rectifying ratio and sub-μA operating current
    Chung-Wei Hsu; Chia-Chen Wan; I-Ting Wang ... 2013 IEEE International Electron Devices Meeting, 2013-Dec.
    Conference Proceeding

    The 3D double-layer vertical RRAM with ultralow sub-μA operating current and high self-rectifying ratio over 10 3 has been demonstrated for the first time. This Ta/TaO x /TiO 2 /Ti interfacial ...
Celotno besedilo
Dostopno za: IJS, NUK, UL, UM
496.
  • 3D vertical TaO sub(x)/TiO sub(2) RRAM with over 10 super(3) self-rectifying ratio and sub- mu A operating current
    Hsu, Chung-Wei; Wan, Chia-Chen; Wang, I-Ting ... Technical digest - International Electron Devices Meeting, 12/2013
    Journal Article

    The 3D double-layer vertical RRAM with ultralow sub- mu A operating current and high self-rectifying ratio over 10 super(3) has been demonstrated for the first time. This Ta/TaO sub(x)/TiO sub(2)/Ti ...
Celotno besedilo
Dostopno za: IJS, NUK, UL, UM
497.
  • Modeling isolation-induced ... Modeling isolation-induced mechanical stress effect on SOI MOS devices
    Ke-Wei Su; Kuang-Hsin Chen; Tang-Xuan Chung ... 2003 IEEE International Conference on SOI, 2003
    Conference Proceeding
    Recenzirano

    In this paper, the mechanical stress effect of SOI MOS devices was analysed. The width dependence of stress effect and drain current shift were evaluated.
Celotno besedilo
Dostopno za: IJS, NUK, UL, UM
498.
  • Context discovery in sensor... Context discovery in sensor networks
    Chia-Hsing Hou; Hung-Chang Hsiao; Chung-Ta King ... ITRE 2005. 3rd International Conference on Information Technology: Research and Education, 2005, 2005
    Conference Proceeding

    Context discovery refers loosely to the operations of extraction, aggregation, storage and deduction of environmental information. Such information can be delivered to context-aware applications so ...
Celotno besedilo
Dostopno za: IJS, NUK, UL, UM
499.
  • A 10 nm Si-based bulk FinFE... A 10 nm Si-based bulk FinFETs 6T SRAM with multiple fin heights technology for 25% better static noise margin
    Min-Cheng Chen; Chang-Hsien Lin; Yun-Fang Hou ... 2013 Symposium on VLSI Circuits, 2013-June
    Conference Proceeding

    For the first time, 10nm Si-based bulk FinFETs 6T SRAM (beta ratio = 2) with novel multiple fin heights technology is successfully demonstrated with 25% better static noise margin at 0.6 V than ...
Celotno besedilo
Dostopno za: IJS, NUK, UL, UM
500.
  • Spontaneous Retro-Orbital S... Spontaneous Retro-Orbital Subperiosteal Hemorrhage with Complete Resolution Following Percutaneous Coronary Intervention for Acute Myocardial Infarction
    Wu, Hsu-Ping; Tsai, Chia-Jung; Tsai, Jui-Peng ... Acta Cardiologica Sinica, 03/2013, Letnik: 29, Številka: 2
    Report

    UNLABELLEDAmong the several treatment strategies available for acute myocardial infarction, primary percutaneous coronary intervention concomitant with antithrombotic agents is the primary treatment ...
Celotno besedilo
Dostopno za: NUK, UL, UM, UPUK

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