The metallurgical properties of the Ni/n-InP system have been investigated. We report the formation of a compositionally nonuniform Ni-In-P amorphous layer during the DC sputtering metal deposition ...process which includes an Ar + cleaning. After RTP and long in situ annealing treatments the simultaneous appearance of the Ni 2 P and Ni 3 P binary phases and the Ni 2 InP ternary phase were observed. Kinetics and nucleation phenomena were highlighted by the precipitation of In during the RTP.
Opening the way to large bandwidths and high data rates Silicon Photonics is of great interest. In the scope of co-integrating III-V devices with CMOS very large scale integration (VLSI), innovative ...contacts to III-V materials have to be developed. In this paper we study the metallurgical and electrical properties of Ni-based metallizations to n-InP and p-InGaAs. It appears that the integration of both metallizations must be realized at temperatures lower than or equal to 340 °C starting with that on n-InP.
The Ni silicide formation was studied by in situ X-ray diffraction, APT and TEM through the use of either a thin layer of Ge (1 nm) deposited between the Ni film and a Si substrate or a Ni(10%Pt) ...film. The Ge was used as a marker for the diffusing species during Ni silicide formation and the Ni(10%Pt) allows revealing the lateral growth of NiSi.
Superconducting boron-doped silicon films prepared by gas immersion laser doping (GILD) technique are analyzed by atom probe tomography. The resulting three-dimensional chemical composition reveals ...that boron atoms are incorporated into crystalline silicon in the atomic percent concentration range, well above their solubility limit, without creating clusters or precipitates at the atomic scale. The boron spatial distribution is found to be compatible with local density of states measurements performed by scanning tunneling spectroscopy. These results, combined with the observations of very low impurity level and of a sharp two-dimensional interface between doped and undoped regions show, that the Si:B material obtained by GILD is a well-defined random substitutional alloy endowed with promising superconducting properties.
Laser atom probe tomography was used to investigate the inter-diffusive reactions at the silicon-nickel interface. The early stages of formation of a NiSi silicide was studied. The addition of Pt was ...shown to increase the temperature of formation of the high resistivity NiSi 2 phase by approximately 150 degC
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