A complementary metal oxide semiconductor (CMOS)-compatible WO x based resistive memory has been developed. The WO x memory layer is made from rapid thermal oxidation of W plugs. The device performs ...excellent electrical properties. The switching speed is extremely fast (${\sim}2$ ns) and the programming voltage (${<}1.4$ V) is low. For single-level cell (SLC) operation, the device shows a large resistance window, and $10^{8}$-cycle endurance. For multi-level cell (MLC) operation, it demonstrates 2-bit/cell storage with the endurance up to 10000 times. The rapid thermal oxidation (RTO) WO x resistance random access memory (RRAM) is very promising for both high-density and embedded memory applications.
A TiOx/TiOxNy resistive random access memory (ReRAM) with a sidewall bottom electrode (BE) is demonstrated for the first time. Several interesting characteristics that are very desirable for high ...reliability memory applications are observed: (1) a stable RESET and SET resistance switching window even without write verification, (2) good 250 °C data retention, (3) ReRAM switching instability after cycling is monitored and corrected, resulting in good reliability, and (4) using only complementary metal oxide semiconductor (CMOS) familiar materials and processes, thus very manufacture-friendly. The thickness and quality of TiOx and TiOxNy are well controlled by plasma oxidation, and a large resistance switching window (>10×), a low operation voltage, and good reliability are realized.
The erase characteristics and mechanism of metal- Al 2 O 3 -nitride-oxide-silicon (MANOS) devices are extensively studied. We use transient analysis to transform the erase curve (V FB - time) into a ...J-E curve (J = transient current, E = field in the tunnel oxide) in order to understand the underlying physics. The measured erase current of MANOS is three orders of magnitude higher than that can be theoretically provided by substrate hole current. In addition, the erase current is very sensitive to the Al 2 O 3 processing condition - also inconsistent with substrate hole injection model. Thus, we propose that MANOS erase occurs through an electron detrapping mechanism. We have further carried out a refill test and its results support the detrapping model. Our results suggest that the interfacial layer between Al 2 O 3 and nitride is a key process that dominates the erase mechanism of MANOS.
Background:
Nilotinib, a second-generation tyrosine kinase inhibitor (TKI), is approved for the treatment of patients with chronic myeloid leukemia (CML) in many countries, including Taiwan. Though a ...number of controlled clinical trials have demonstrated the safety and efficacy of nilotinib, studies assessing the safety and efficacy of nilotinib in routine clinical practice are limited.
Methods:
The current study was an open-label, single-arm study conducted across 12 centers in Taiwan in adult patients with CML in chronic or accelerated phase with confirmed Ph+ chromosome (or BCR-ABL) and resistant or intolerant to one or more previous TKIs. The primary objective was to collect the long-term safety data in patients treated with nilotinib 400 mg, twice daily for up to 2 years.
Results:
The study enrolled 85 patients with CML, including 76 in the chronic phase (CML-CP) and 9 in the accelerated phase (CML-AP). Overall, 1166 adverse events (AEs) were reported in 80 patients (94.1%), of which 70 AEs (6%) in 28 patients (32.9%) were serious and 336 AEs (28.8%) reported in 60 patients (70.6%) were drug-related. Common drug-related AEs were thrombocytopenia (21.2%), increased alanine aminotransferase (21.2%) and pruritus (17.7%). Of the 85 patients, 19 switched from imatinib due to intolerance – AEs were resolved in 16 of these 19 patients (84.2%). By 24 months, the cumulative rates of complete cytogenetic response (CCyR), major molecular response (MMR), MR4.0 (BCR-ABL1IS ⩽0.01%) and MR4.5 (BCR-ABL1IS ⩽0.0032%) were 75.3, 56.8, 16.2 and 7.4%, respectively. Patients with CML-CP at baseline had higher overall survival (OS) and progression-free survival (PFS) than those with CML-AP.
Conclusion:
This is the first study that demonstrated that nilotinib is effective and well-tolerated in patients resistant or intolerant to imatinib in the real-world setting in Taiwan, reflecting effective management of CML by physicians under routine clinical practice in Taiwan.
A TiO sub(x)/TiO sub(-x) N sub(y) resistive random access memory (ReRAM) with a sidewall bottom electrode (BE) is demonstrated for the first time. Several interesting characteristics that are very ...desirable for high reliability memory applications are observed: (1) a stable RESET and SET resistance switching window even without write verification, (2) good 250 degreesC data retention, (3) ReRAM switching instability after cycling is monitored and corrected, resulting in good reliability, and (4) using only complementary metal oxide semiconductor (CMOS) familiar materials and processes, thus very manufacture-friendly. The thickness and quality of TiO sub(x) and TiO sub(x) N sub(y) are well controlled by plasma oxidation, and a large resistance switching window (>10x), a low operation voltage, and good reliability are realized.
The behavior of WO X resistive random access memory (ReRAM) is a strong function of the top electrode material, which controls the conduction mechanism and the forming process. When using a top ...electrode with low work function, the current conduction is limited by space charges. On the other hand, the mechanism becomes thermionic emission for devices with a high work function top electrode. These (thermionic) devices are also found to have higher initial resistance, reduced forming current, and larger resistance window. Based on these insights and considering the compatibility to complementary metal--oxide--semiconductor (CMOS) process, we proposed to use Ni as the top electrode for high performance WO X ReRAM devices. The new Ni/WO X /W device can be switched at a low current density less than $8\times 10^{5}$ A/cm 2 , with RESET/SET resistance ratio greater than 100, and extremely good data retention of more than 300 years at 85 °C.
For Solid-State Drive (SSD) applications cycling endurance of NAND flash is a critical challenge. In this work the endurance reliability of BE-SONOS NAND is thoroughly examined. Using dual CV/IV ...tests the impact of interface state (Dit) generation/annealing and real charge trapping (Q) on the endurance degradation has been clearly identified. For BE-SONOS with pure thermal oxide O1, the endurance degradation mainly comes from Dit generation at Si/O1 interface, while charge trapping in the thin ONO barrier is negligible even after 100 K cycles of stressing. Meanwhile, the high-temperature V T loss mainly comes from interface state annealing, while the real charge loss due to electron de-trapping is much smaller. This indicates that our nitride-trapping device has "deep" traps that well retain charges even after the tunnel barrier is damaged. Based on this understanding, we have introduced nitrided O1 to strengthen the Si/O1 interface, and both the endurance and retention are greatly improved. We demonstrate high-endurance BE-SONOS NAND devices of P/E > 5K for MLC and P/E > 100K for SLC operations with excellent retention, promising for solid-state drive (SSD) applications.
Barrier engineered charge-trapping NAND flash (BE-CTNF) devices are extensively examined by theoretical modeling and experimental validation. A general analytical tunneling current equation for ...multi-layer barrier is derived using WKB approximation. The rigorously derived analytical form is valid for both electron and hole tunneling, as well as for any barrier composition. With this, the time evolution (Vt-time) of any BE-CTNF device during programming/erasing can be accurately simulated. The model is validated by experimental results from bandgap-engineered SONOS (BE-SONOS) and various structures using Al 2 O 3 top-capping layer. Using this model, various structures of BE-CTNF with high-K tunneling or blocking dielectric are investigated. Furthermore, the low-field tunneling current for various structures are simulated, providing theoretical foundations for retention and read disturb optimization.
The photoablation properties of two soluble polyimides DMDB/6FDA and OT/6FDA with thicknesses of over 300 mum, synthesized by the polycondensation of a hexafluoropropyl group contained in a ...dianhydride with two kinds of diamines, are investigated using a 248 nm krypton fluoride (KrF) laser. The incorporation of the hexafluoropropyl group into the chemical structure gives these two polyimides higher etching rates than Kapton (a commercial polyimide film which is difficult to dissolve). The etching rates of synthesized polyimides are about 0.1-0.5 mum/pulse over a fluence range of 0.25-2.25 J cm-2. The photothermal mechanism for DMDB/6FDA contributes about 19% of etching depth at a laser fluence of 0.82 J cm-2. Moreover, the number of laser pulses seriously affects the taper angle of microstructures, especially at low fluence. Near-vertical side-wall structures can be built at high fluence (~2 J cm-2). Fresnel patterns with a thickness of 300 mum and a linewidth of 10 mum were fabricated, with an attainable aspect ratio of around 30. After photoablation, the complementary metallic microstructures were also fabricated by a sequential electroplating procedure. Then, those two new polyimides could be dissolved easily in most common solvents (such as THF, DMSO, NMP and DMF). These results indicate that these two soluble polyimides are highly suitable for use in the KrF laser LIGA process.
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