A phototransistor based on a chemical vapor deposited (CVD) MoS2 monolayer exhibits a high photoresponsivity (2200 A W−1) and an excellent photogain (5000). The presence of shallow traps contributes ...to the persistent photoconductivity. Ambient adsorbates act as p‐dopants to MoS2, decreasing the carrier mobility, photoresponsivity, and photogain.
Contact engineering is a prerequisite for achieving desirable functionality and performance of semiconductor electronics, which is particularly critical for organic–inorganic hybrid halide ...perovskites due to their ionic nature and highly reactive interfaces. Although the interfaces between perovskites and charge‐transporting layers have attracted lots of attention due to the photovoltaic and light‐emitting diode applications, achieving reliable perovskite/electrode contacts for electronic devices, such as transistors and memories, remains as a bottleneck. Herein, a critical review on the elusive nature of perovskite/electrode interfaces with a focus on the interfacial electrochemistry effects is presented. The basic guidelines of electrode selection are given for establishing non‐polarized interfaces and optimal energy level alignment for perovskite materials. Furthermore, state‐of‐the‐art strategies on interface‐related electrode engineering are reviewed and discussed, which aim at achieving ohmic transport and eliminating hysteresis in perovskite devices. The role and multiple functionalities of self‐assembled monolayers that offer a unique approach toward improving perovskite/electrode contacts are also discussed. The insights on electrode engineering pave the way to advancing stable and reliable perovskite devices in diverse electronic applications.
Rational selection of electrodes plays a critical role in perovskite‐based electronics due to the high reactivity of halide perovskite materials. A comprehensive review of perovskite/electrode interfaces, as well as, state‐of‐the‐art contact engineering, which assists the development of perovskite‐based devices with inhibited interfacial reactions, ohmic carrier transport, and non‐hysteric electronic characteristics, is presented.
Metal‐halide perovskites have drawn profuse attention during the past decade, owing to their excellent electrical and optical properties, facile synthesis, efficient energy conversion, and so on. ...Meanwhile, the development of information storage technologies and digital communications has fueled the demand for novel semiconductor materials. Low‐dimensional perovskites have offered a new force to propel the developments of the memory field due to the excellent physical and electrical properties associated with the reduced dimensionality. In this review, the mechanisms, properties, as well as stability and performance of low‐dimensional perovskite memories, involving both molecular‐level perovskites and structure‐level nanostructures, are comprehensively reviewed. The property–performance correlation is discussed in‐depth, aiming to present effective strategies for designing memory devices based on this new class of high‐performance materials. Finally, the existing challenges and future opportunities are presented.
Low‐dimensional halide perovskites are among the most rapidly emerging building blocks for optoelectronic applications. This review elucidates the advantages and the crucial role of molecular‐/structure‐level low‐dimensional halide perovskites in achieving high performance and enhanced stability in memory applications.
Integrating multiple semiconductors with distinct physical properties is a practical design strategy for realizing novel optoelectronic devices with unprecedented functionalities. In this work, a ...photonic resistive switching (RS) memory is demonstrated based on solution‐processed bilayers of strontium titanate (SrTiO3 or STO) quantum dots (QDs) and all‐inorganic halide perovskite CsPbBr3 (CPB) with an Ag/STO/CPB/Au architecture. Compared with the single‐layer STO or CPB RS device, the double‐layer device shows considerably improved RS performance with a high switching ratio over 105, an endurance of 3000 cycles, and a retention time longer than 2 × 104 s. The formation of heterojunction between STO and CPB significantly enhances the high resistance state, and the separation of the active silver electrode and the CPB layer contributes to the long‐term stability. More importantly, the photonic RS device exhibits UV–visible dual‐band response due to the photogating effect and the light‐induced modification of the heterojunction barrier. Last, tri‐mode operation, i.e., photodetector, memory, and photomemory, is demonstrated via tailoring the light and electric stimuli. This bilayer device architecture provides a unique approach toward enhancing the performance of photoresponsive data‐storage devices.
A solution‐processed photonic memory is fabricated using all‐perovskite SrTiO3/CsPbBr3 bilayers as the switching media. The resistive switching performance of the device is considerably improved compared to the single‐layer counterparts, exhibiting response to dual UV–visible bands, as well as tri‐mode operation of photodetector, memory, and photomemory.
Memristive devices have been extensively demonstrated for applications in nonvolatile memory, computer logic, and biological synapses. Precise control of the conducting paths associated with the ...resistance switching in memristive devices is critical for optimizing their performances including ON/OFF ratios. Here, gate tunability and multidirectional switching can be implemented in memristors for modulating the conducting paths using hexagonal α‐In2Se3, a semiconducting van der Waals ferroelectric material. The planar memristor based on in‐plane (IP) polarization of α‐In2Se3 exhibits a pronounced switchable photocurrent, as well as gate tunability of the channel conductance, ferroelectric polarization, and resistance‐switching ratio. The integration of vertical α‐In2Se3 memristors based on out‐of‐plane (OOP) polarization is demonstrated with a device density of 7.1 × 109 in.−2 and a resistance‐switching ratio of well over 103. A multidirectionally operated α‐In2Se3 memristor is also proposed, enabling the control of the OOP (or IP) resistance state directly by an IP (or OOP) programming pulse, which has not been achieved in other reported memristors. The remarkable behavior and diverse functionalities of these ferroelectric α‐In2Se3 memristors suggest opportunities for future logic circuits and complex neuromorphic computing.
Gate‐tunable and multidirection‐switchable memristive phenomena in a van der Waals ferroelectric α‐In2Se3 are demonstrated. The planar memristor exhibits a pronounced switchable photocurrent, as well as gate tunability of the channel conductance, ferroelectric polarization, and resistance‐switching ratio. A multidirectionally operated α‐In2Se3 memristor is also proposed, enabling the control of the out‐of‐plane (OOP) (or in‐plane (IP)) resistance state directly by an IP (or OOP) programming pulse.
Monolayer molybdenum disulfide (MoS2) has become a promising building block in optoelectronics for its high photosensitivity. However, sulfur vacancies and other defects significantly affect the ...electrical and optoelectronic properties of monolayer MoS2 devices. Here, highly crystalline molybdenum diselenide (MoSe2) monolayers have been successfully synthesized by the chemical vapor deposition (CVD) method. Low-temperature photoluminescence comparison for MoS2 and MoSe2 monolayers reveals that the MoSe2 monolayer shows a much weaker bound exciton peak; hence, the phototransistor based on MoSe2 presents a much faster response time (<25 ms) than the corresponding 30 s for the CVD MoS2 monolayer at room temperature in ambient conditions. The images obtained from transmission electron microscopy indicate that the MoSe exhibits fewer defects than MoS2. This work provides the fundamental understanding for the differences in optoelectronic behaviors between MoSe2 and MoS2 and is useful for guiding future designs in 2D material-based optoelectronic devices.
The extraordinary electronic, optical, and mechanical characteristics of 2D materials make them promising candidates for optoelectronics, specifically in infrared (IR) detectors owing to their ...flexible composition and tunable optoelectronic properties. This review presents the recent progress in IR detectors composed of 2D materials and their hybrid structures, including graphene, black phosphorous, transition metal dichalcogenides, halide perovskite as well as other new layered materials and their heterostructures. The focus is on the short‐wave, mid‐wave, and long‐wave infrared regimes, which pose a grand challenge for rational materials and device designs. The dependence of the device performance on the optical and electronic properties of 2D materials is extensively discussed, aiming to present the general strategies for designing optoelectronic devices with optimal performance. Furthermore, the recent results on 2D material‐based heterostructures are presented with an emphasis on the relationship between band alignment, charge transfer, and IR photodetection. Finally, a summary is given as well as the discussion of existing challenges and future directions.
2D materials are among the most rapidly emerging building blocks for high‐performance infrared photodetection. This review elucidates the advantages and the crucial role of 2D materials in achieving high performance and enhanced stability in infrared photodetection, especially in short‐wave, mid‐wave, and long‐wave infrared regimes.
Abstract
Monolayer transition metal dichalcogenides, such as MoS
2
and WSe
2
, have been known as direct gap semiconductors and emerged as new optically active materials for novel device ...applications. Here we reexamine their direct gap properties by investigating the strain effects on the photoluminescence of monolayer MoS
2
and WSe
2
. Instead of applying stress, we investigate the strain effects by imaging the direct exciton populations in monolayer WSe
2
–MoS
2
and MoSe
2
–WSe
2
lateral heterojunctions with inherent strain inhomogeneity. We find that unstrained monolayer WSe
2
is actually an indirect gap material, as manifested in the observed photoluminescence intensity–energy correlation, from which the difference between the direct and indirect optical gaps can be extracted by analyzing the exciton thermal populations. Our findings combined with the estimated exciton binding energy further indicate that monolayer WSe
2
exhibits an indirect quasiparticle gap, which has to be reconsidered in further studies for its fundamental properties and device applications.
Due to its high carrier mobility, broadband absorption, and fast response time, the semi-metallic graphene is attractive for optoelectronics. Another two-dimensional semiconducting material ...molybdenum disulfide (MoS2) is also known as light- sensitive. Here we show that a large-area and continuous MoS2 monolayer is achievable using a CVD method and graphene is transferable onto MoS2. We demonstrate that a photodetector based on the graphene/MoS2 heterostructure is able to provide a high photogain greater than 10(8). Our experiments show that the electron-hole pairs are produced in the MoS2 layer after light absorption and subsequently separated across the layers. Contradictory to the expectation based on the conventional built-in electric field model for metal-semiconductor contacts, photoelectrons are injected into the graphene layer rather than trapped in MoS2 due to the presence of a perpendicular effective electric field caused by the combination of the built-in electric field, the applied electrostatic field, and charged impurities or adsorbates, resulting in a tuneable photoresponsivity.
The cross‐conjugated vinylogous 4+2 anionic annulation has been newly developed, the cascade process of which has a high preference for regiochemical control and chemoselectivity, giving rise to ...exclusively Michael‐type adducts in moderate to high yields (up to 94 %, 35 examples). By making use of this approach as a key operation, the first total synthesis of natural antibiotic ABX, in racemic form, has been successfully achieved in a concise 7‐step sequence with an overall yield of about 20 %.
Novel vinylogous donors have been developed to carry out a unique 4+2 cascade process in a completely regio‐ and chemoselective manner, by which the first total synthesis of natural antibiotic ABX, in racemic form, was accomplished in a rather concise fashion. This versatile methodology may have great potential in synthesizing polyaromatic compounds and heterocycles.
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