Wide-bandgap power devices such as those made from silicon carbide (SiC) and gallium nitride (GaN) realize fast switching and it helps to increase the efficiency of power conversion. This report ...experimentally compares static and dynamic characteristics of wide-bandgap power switching transistors; SiC MOSFET and cascode GaN transistor, and focuses on their characteristics of electromagnetic interference (EMI) noise in a DC-DC boost converter.
In recent years, power electronic converters have been downsized significantly by high-density packaging techniques. As a result, parasitic couplings between power electronic components have become ...larger. For the prediction of electromagnetic interference (EMI) noise considering such couplings, a 3-D electromagnetic simulation is more suitable than a circuit simulation using a huge number of parasitic models. The most-practical electromagnetic simulation method is the finite element method, which is based on a frequency domain. The switching noise must be modeled in the frequency domain for an EMI noise simulation. In this article, we propose a new noise-source model for a frequency-domain EMI noise simulation. We modeled a transistor and a freewheeling diode by voltage and current sources based on three model topologies: transistor- off -diode- on topology ( off -topology); transistor- on -diode- off topology ( on -topology); and transistor- on -diode- on topology (recovery topology). We also used off -topology to simulate the turn- off EMI noise as caused by the turning- off of a transistor. Meanwhile, we used a combination of on -topology and recovery topology to simulate the turn- on EMI noise including recovery noise as caused by the turning- on of a transistor. After introducing the details of the model, we compared the measured and simulated results so as to show the validity of the model.
The fast switching characteristics of silicon carbide (SiC) power devices can be expected to realize low losses, light weight, and compact power converters. However, high dv/dt and di/dt during ...switching transients raise the concerns of electromagnetic interference (EMI) for high-power converters. This report focuses on the switching characteristics of SiC power devices, and discusses the relationship between their transient characteristics and EMI noise sources for power conversion circuit.
Fast switching operation of Silicon carbide (SiC) power semiconductor devices could lead to cause electromagnetic interference (EMI) noise problem of high-voltage power converter. This report ...experimentally investigates dynamic characteristics of SiC MOSFET in a synchronous boost converter, and evaluates their characters as EMI noise source based on conducted noise measurement.
This report studies the visualization of dynamic noise current distribution in switching operation of Si and SiC power devices. The measurement system is developed to identify time-dependent near ...magnetic field distribution for periodic steady state circuit operation. The experimental results shown in this report demonstrate the usefulness of the developed system to identify the EMI noise generation and to visualize the time variation of noise current distribution in the power conversion circuit.
The technical committee on electromagnetic compatibility (EMC) was established under the Fundamentals and Materials Society (FMS), the Institute of Electrical Engineers in Japan (IEEJ) in 1999. Since ...then, research and investigation related to this field have been conducted actively in the committee. In this report, trend and current activity in the research field of electromagnetic compatibility are summarized.
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