The characteristics of acoustic-gravity waves (waveforms, time durations, amplitudes, azimuths and horizontal phase speeds) from the eruption of the Hunga-Tonga-Hunga-Hapai volcano detected at ...different infrasound stations of the Infrasound Monitoring System and at a network of low-frequency microbarographs in the Moscow region are studied. Using the correlation analysis of the signals at different locations, six arrivals of signals from the volcano, which made up to two revolutions around the Earth, were detected. The Lamb mode of acoustic gravity waves from the volcano eruption is identified and the effect of this mode on generation of tsunami waves and variation of aerosol concentration is studied. The energy released from an underwater volcano into the atmosphere is estimated from the parameters of the Lamb wave and compared with the energy released from the most powerful nuclear bomb of 58 Mt TNT.
Solid state memory and switching devices aimed at replacing the flash memory technology operate by switching from the high to low resistance when conductive filaments are created in response to the ...electric pulse. The filaments are identified with either structurally different protrusions or purely electronic conductive pathways. The former can appear via the field induced nucleation (FIN), while the latter do not require phase transformations and are attributed to certain types of temperature and bias dependent conductivity. The existing understanding of those processes ignores features related to extremely small linear sizes of nano-structures. Such are, for example, the device sizes smaller than critical nucleation radii, and/or the electron energy relaxation lengths exceeding the structure dimensions. This paper develops a theory of switching under nano-size conditions. We show how the structure thinness can make FIN a truly threshold phenomenon possible only for voltage (not the field) exceeding a certain critical value. We predict the possibility of threshold switching without memory for certain thickness dependent voltages. The thermal runaway mechanism of electronic switching is described analytically leading to results consistent with the published numerical modeling. Our predictions offer possible experimental verifications deciding between FIN and thermal runaway switching.
•The patient with an SLC6A1 mutation, typically linked to disorders like epilepsy and autism, exhibited symptoms consistent with schizophrenia and bipolar disorder.•The patient's polygenic risk score ...was aligned with both schizophrenia and bipolar disorder, despite no family history of psychiatric disorders.•The study contributed to ongoing discussion of the importance of GABAergic processes in schizophrenia's etiology.
In spite of extensive research, the physics of electric transport in the OFF (high resistance) state of resistive random access memory remains poorly understood. Here, we propose a theory that ...explains the observed activation nature of that transport, its exponential non-ohmicity, variations between nominally identical structures, and failure trends. Our theory proceeds from the finding that the diffusion transport mechanisms must be ruled out as leading to nonphysically high temperatures (T ~ 4000 - 5000 K) well above melting. The Schottky emission remains acceptable due to its underlying ballistic transport by ~1 eV electrons spreading the Joule heat over much larger distances without melting. Taking into account, the random fields of charged defects the Schottky emission enables one to describe the device variability and failures.