Using antiferromagnets as active elements in spintronics requires the ability to manipulate and read-out the Néel vector orientation. Here we demonstrate for Mn2Au, a good conductor with a high ...ordering temperature suitable for applications, reproducible switching using current pulse generated bulk spin-orbit torques and read-out by magnetoresistance measurements. Reversible and consistent changes of the longitudinal resistance and planar Hall voltage of star-patterned epitaxial Mn2Au(001) thin films were generated by pulse current densities of ≃107 A/cm2. The symmetry of the torques agrees with theoretical predictions and a large read-out magnetoresistance effect of more than ≃6% is reproduced by ab initio transport calculations.
Abstract
Antiferromagnets possess a number of intriguing and promising properties for electronic devices, which include a vanishing net magnetic moment and thus insensitivity to large magnetic fields ...and characteristic terahertz frequency dynamics. However, probing the antiferromagnetic ordering is challenging without synchrotron-based facilities. Here, we determine the material parameters of the insulating iron oxide hematite, α-Fe
2
O
3
, using the surface sensitive spin-Hall magnetoresistance (SMR). Combined with a simple analytical model, we extract the antiferromagnetic anisotropies and the bulk Dzyaloshinskii-Moriya field over a wide range of temperatures and magnetic fields. Across the Morin phase transition, we show that the electrical response is dominated by the antiferromagnetic Néel vector rather than by the emergent weak magnetic moment. Our results highlight that the surface sensitivity of SMR enables access to the magnetic anisotropies of antiferromagnetic crystals, and also of thin films, where other methods to determine anisotropies such as bulk-sensitive magnetic susceptibility measurements do not provide sufficient sensitivity.
Lateral spin valves are attractive device geometries where functional spin currents can be generated and detected by various mechanisms, such as spin injection and the direct and the inverse spin ...Hall effect. To understand the mechanisms behind these effects better, as well as their potential for application in devices, we combine multiple mechanisms in multi-terminal Pt-Py-Cu lateral spin valves: we generate pure spin currents in the copper spin conduit both via the spin Hall effect in platinum and electric spin injection from permalloy and detect signals both via conventional non-local detection and via the inverse spin Hall effect in the same device at variable temperatures. Differences are observed, which we explain by the different spin injection and detection mechanisms, revealing their importance for the temperature dependence, which is not just governed by the spin transport in the conduit as previously claimed. By determining a different sensitivity of the observed effects on the interfaces, we highlight the importance of the exact current path for the device operation.
Yttrium iron garnet (YIG, Y 3Fe5O12) films have been epitaxially grown on Gadolinium Gallium Garnet (GGG, Gd3Ga5O12) substrates with (100) orientation using pulsed laser deposition. The films were ...single-phase, epitaxial with the GGG substrate, and the root-mean-square surface roughness varied between 0.14 nm and 0.2 nm. Films with thicknesses ranging from 17 to 200 nm exhibited low coercivity (<2 Oe), near-bulk room temperature saturation moments (∼135 emu cm−3), in-plane easy axis, and damping parameters as low as 2.2 × 10−4. These high quality YIG thin films are useful in the investigation of the origins of novel magnetic phenomena and magnetization dynamics.
We probe the current-induced magnetic switching of insulating antiferromagnet–heavy-metal systems, by electrical spin Hall magnetoresistance measurements and direct imaging, identifying a reversal ...occurring by domain wall (DW) motion. We observe switching of more than one-third of the antiferromagnetic domains by the application of current pulses. Our data reveal two different magnetic switching mechanisms leading together to an efficient switching, namely, the spin-current induced effective magnetic anisotropy variation and the action of the spin torque on the DWs.
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