Severe and unexpected yield loss (~26% in avg.) is found in the early development stage of the advanced flash memory. The major failure mode, array bridging contact, is revealed as the root cause and ...mainly induced by undercutting photo-resist (PR) profile. In this work, a novel scheme, anti-etch bottom anti-reflective coating (anti-etch BARC), is used instead of the conventional dual ARC (BARC/dielectric ARC, DARC) stacks on amorphous carbon layer (ACL) for contact hole patterning. Herein, we successfully demonstrate to eliminate the failure issue, greatly improve the yield and provide a promising solution with manufacturing feasibility.
Background: Areca nut chewing is associated with an increase in the incidence of oral neoplastic or inflammatory diseases. Aberrations in matrix metalloprotease (MMP) expression are associated with ...the pathogenesis of oral diseases. This study investigated the potential effects of areca nut extract (ANE) on human gingival fibroblasts and the consequential impacts on inflammatory pathogenesis.
Methods: Analyses of senescence marker, cell viability, changes of the cell cycle, and cell granularity in gingival fibroblasts together with an assessment of the invasiveness of polymorphonuclear (PMN) leukocytes after treatment with the supernatant of ANE‐treated gingival fibroblasts were performed to characterize the phenotypic impacts. Western blotting and gelatin zymography were used to assay the expression and activity of MMP‐2.
Results: Chronic subtoxic (<10 μg/ml) ANE treatment resulted in premature growth arrest, appearance of senescence‐associated β‐galactosidase activity and various other senescence‐associated phenotypes in gingival fibroblasts. Gingival fibroblasts established from older individuals had a higher propensity to become ANE‐induced senescent gingival fibroblasts. An activation of MMP‐2 was identified in senescent cells. PMN leukocytes treated with the supernatant of ANE‐induced senescent cells exhibited a significant increase in invasiveness, which was abrogated by both a MMP‐2 blocker and a MMP‐2 nullifying antibody.
Conclusions: This study provides evidence whereby MMP‐2 secreted from ANE‐induced senescent gingival fibroblasts would facilitate the invasiveness of PMN leukocytes, which could be associated with the oral inflammatory process in areca chewers.
Abstract Background/purpose The human leukocyte antigen (HLA) system, which plays a vital role in immunity, is the most polymorphic gene complex found in the human genome. This study investigated ...HLA-related alleles and haplotypes in Taiwanese patients with oral squamous cell carcinoma (OSCC). Materials and methods HLA class I (HLA-A and HLA-B) antigens and class II (HLA-DRB1) alleles were determined in 105 patients with OSCC and compared with those in 190 healthy controls. The antigens were measured serologically and the alleles by sequencing-based typing. Results Compared with the control group, patients with OSCC had higher frequencies of HLA-A24, HLA-B54, HLA-DRB1*0405, and HLA-DRB1*1201, while they had lower frequencies of HLA-B58 and HLA-DRB1*1302. Haplotype frequencies also varied significantly in individuals with OSCC, with certain haplotypes associated with lymph node metastases or a particular tumor stage. Conclusion These results suggest that HLA genetic factors influence susceptibility to OSCC and perhaps to lymph node metastasis and tumor progression.
Down-flow plasma etching is mentioned instead of high-density capacitively coupled plasma (CCP) etching to prevent the control gate (CG) against physical damage during the intra-level dielectric ...(ILD) etch back, which is the process prior to form cobalt silicide word lines. However, owning to lack of ion bombardment, it is hard to achieve good etch uniformity. This paper presents the design of experiments (DOE) in varied the parameters of RF power and the chemistry ratio of NH 3 /NF 3 to achieve the optimal condition on the etch uniformity improvement. As a result, the cobalt silicide gate Rs distribution is improved ca. 150% at dense region and ca. 40% at periphery region, respectively.
The TiN was conventionally used as barrier layers for both tungsten plug and AlCu metal lines. This paper reveals a novel back end of line (BEOL) self-aligned double patterning (SADP) technology, ...which applied TiN as a spacer material. The relative processes are introduced and discussed in detail. The new SADP approach was further applied for Cu damascene structure constructions in the advanced non-volatile memory (NVM).
In this article, we have demonstrated the utilization of innovative atomic-layer-deposited (ALD) ultrathin (~1.8 nm) amorphous InSnZnO (<inline-formula> <tex-math notation="LaTeX">\alpha ...</tex-math></inline-formula>-ITZO) channel material in the development of a back-end-of-line (BEOL) compatible thin film transistor (TFT). Through the optimization of the indium/tin/zinc (In/Sn/Zn) ratio, the bottom gate (BG) TFT with In0.83Sn0.11Zn0.06O channel and the channel length (<inline-formula> <tex-math notation="LaTeX">{L}_{\text {ch}} </tex-math></inline-formula>) of 40 nm demonstrates remarkable performances, including positive threshold voltage (<inline-formula> <tex-math notation="LaTeX">{V}_{\text {th}} </tex-math></inline-formula>) of 0.38 V, excellent subthreshold swing (SS) value of 66.4 mV/dec, high field-effect mobility (<inline-formula> <tex-math notation="LaTeX">\mu _{\text {FE}} </tex-math></inline-formula>) of 48 cm2/V-s, maximum ON-state current density (<inline-formula> <tex-math notation="LaTeX">{I}_{\text {ON}} </tex-math></inline-formula>) of <inline-formula> <tex-math notation="LaTeX">686~\mu \text{A}/\mu \text{m} </tex-math></inline-formula> at <inline-formula> <tex-math notation="LaTeX">{V}_{\text {DS}} </tex-math></inline-formula> = 2 V (@<inline-formula> <tex-math notation="LaTeX">{V}_{G} </tex-math></inline-formula> = 4 V), and extremely low drain-induced barrier lowering (DIBL) performance of 22 mV/V. Furthermore, the excellent stabilities of the <inline-formula> <tex-math notation="LaTeX">\alpha </tex-math></inline-formula>-ITZO TFT were shown by negative bias stress (NBS) and positive bias stress (PBS) under <inline-formula> <tex-math notation="LaTeX">{V}_{G} </tex-math></inline-formula> of (<inline-formula> <tex-math notation="LaTeX">{V}_{\text {th}}~\pm </tex-math></inline-formula> 3 V), and <inline-formula> <tex-math notation="LaTeX">{V}_{\text {th}} </tex-math></inline-formula> shift (<inline-formula> <tex-math notation="LaTeX">\Delta {V}_{\text {th}} </tex-math></inline-formula>) of −40 and 60 mV (<inline-formula> <tex-math notation="LaTeX">{L}_{\text {ch}} </tex-math></inline-formula> = 700 nm) after 3600 s was exhibited. We also simulated the current gain cutoff frequency (<inline-formula> <tex-math notation="LaTeX">{f}_{T} </tex-math></inline-formula>) by technology computer-aided design (TCAD) simulation to further investigate the potential of radio frequency (RF) applications. These results establish a competitive standard for TFTs based on quaternary ultrathin (<inline-formula> <tex-math notation="LaTeX">{T}_{\text {ch}} < 5 </tex-math></inline-formula> nm) amorphous oxide semiconductors (AOSs).
Abstract Skin manifestations due to intra-abdominal infection are uncommon but could be a warning sign of severe infection. We report a 58-year-old uremic female who had acute cholecystitis and ...pneumatosis intestinalis. She developed periumbilical hemorrhagic bullae and finally had a fatal outcome with medical therapy. Severe intra-abdominal infection such as pneumatosis intestinalis should be suspected when periumbilical bullae increase in size.
In this study, we reported the employment of atomic-layer-deposited (ALD) ultrathin (~1.8 nm) amorphous InSnZnO (a-ITZO) as an innovative channel material to develop the back-end-of-line (BEOL) ...compatible thin film transistor (TFT) for monolithic 3D integration for the first time. By carefully adjusting the In/Sn/Zn ratio through ALD cycles, the bottom gate (BG) TFT with ALD In0.83Sn 0.11 Zn 0.06 O channel and channel length (L ch ) of 40 nm demonstrates remarkably optimized performance characteristics, including positive threshold voltage (V th ) of 0.38 V, excellent subthreshold swings (SS) value of 66.4 mV/dec, and high electron mobility (μEE) of 48 cm2/V-s. Moreover, the maximum on-state current density (ION) of 686 μA/μm at VDS=2V and impressively low drain-induced barrier lowering (DIBL) performance of 22 mV/V were exhibited. These results are among the most competitive values reported for TFTs based on quaternary ultrathin (Tch < 5 nm) amorphous oxide semiconductors. Furthermore, the TFT demonstrates highly stable device characteristics, as evidenced by threshold voltage shift (ΔV th ) of -40 mV and 60 mV (L ch = 700 nm) after 3600 seconds of negative gate bias stress (NBS) and positive gate bias stress (PBS) with |VG-V th | of 3 V.
Prior Helicobacter pylori (H pylori) infection has often been underestimated. These underestimations have misled physicians attempting to determine the significance between H pylori and certain ...gastrointestinal lesions such as intestinal metaplasia, atrophic gastritis, and gastric cancer. Our study endeavored to detect past H pylori infections accurately, easily, and rapidly with the newly developed immunoblot kit, Helico Blot 2.1.
Thirty-three patients, including 25 H pylori infected and 8 uninfected cases, were enrolled in our study. All patients received consecutive gastroendoscopic examinations and (13)C-urea breath test (UBT) tests at 6- or 12-mo intervals for up to 4 years. Serum samples were obtained from each patient at the same time. Intragastric H pylori infection was confirmed in accordance with the gold standard. Twenty-five H pylori-infected patients received triple therapies after initial bacterial confirmation, and were successful in eradicating their infections. Serially obtained sera were tested by means of Helico Blot 2.1.
Current infection marker detected by Helico Blot 2.1 was unreliable for representing ongoing H pylori infection. Only 35 and 37 ku antibodies of H pylori had significant seroconversion rates 1 year after having been cured. The seropositive rates of 116 ku (cytotoxin-associated antigen (CagA)) and Helico Blot 2.1 were nearly 100% during 4-year follow-up period. Both CagA antigen and Helico blot 2.1 could serve as indicators of long-term H pylori infection.
Helico Blot 2.1 can detect past H pylori infections for up to 4 years, and is the best method to date for detecting previous long-term H pylori infection.
In this work, we reported aggressively scaled amorphous InZnO x (\alpha-IZO) thin film transistor (TFT) in channel length (L ch =8 nm) and thickness (2 nm) as a promising candidate for monolithic ...three-dimensional (M3D) integrations at back-end-of-line (BEOL). The bottom gate TFT with ultra-short L ch of 8 nm exhibited excellent sub-threshold swings (SS) value of 69 mV/dec, high filed-effect mobility (\mu_{F}E) of 41 cm^{2}/V-s and on-current density (I ON ) up to 575 \mu A\ \mu m (V_{DS} = 1V, V_{G}|= 2V) with outstanding maximum transconductance (Gm) value of 521 \mu S \mu m (V_{D}S = 1 V) . In particular, the maximum Gm reaches 802 \mu S \mu m at V_{DS}= 2V and very low drain induce barrier lowering (DIBL) performance of 27.8 mV/V represent the best Gm and DIBL values reported for ternary amorphous oxide-semiconductor based TFTs. Furthermore, the highly stable device characteristics of the TFT was demonstrated with positive gate bias stress (PBS), the threshold voltage shift \left(\Delta \mathrm{V}_{t h}\right) of 26.5 mV (L ch =50 nm) after 3000 s stress with VG-Vth of 3 V was observed
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