LaFeO 3 is a perovskite structure (ABO 3 ) catalytic and p-type semiconductor sensing material, its sensing property for toxic gases is seldom reported. The nanocomposites of LaFeO 3 and LaFe 1-x Mg ...x O 3 (x = 0.02, 0.04, 0.06) were prepared by solution based method and their crystal structures were characterized by X-ray diffraction (XRD). The sensing test results showed that the response of LaFeO 3 to NO 2 is greatly enhanced by surface modify of MgO from the former 11.90 increased to 891 at the optimum operating temperature of 350°C, and could be contributed to increase of surface active sites supplied by MgO for both oxygen and NO 2 adsorption and surface reaction. The effect of MgO loading and chemical state on gas sensing have been investigated by temperature-programmed desorption (TPD) and X-ray photoelectron spectroscopic (XPS) analysis.
To understand how the Wnt coreceptor LRP-5 is involved in transducing the canonical Wnt signals, we identified Axin as a protein that interacts with the intracellular domain of LRP-5. LRP-5, when ...expressed in fibroblast cells, showed no effect on the canonical Wnt signaling pathway by itself, but acted synergistically with Wnt. In contrast, LRP-5 mutants lacking the extracellular domain functioned as constitutively active forms that bind Axin and that induce LEF-1 activation by destabilizing Axin and stabilizing β-catenin. Addition of Wnt caused the translocation of Axin to the membrane and enhanced the interaction between Axin and LRP-5. In addition, the LRP-5 sequences involved in interactions with Axin are required for LEF-1 activation. Thus, we conclude that the binding of Axin to LRP-5 is an important part of the Wnt signal transduction pathway.
Numerical simulation using SST k-w turbulence model was carried out, to predict pressure fluctuation transfer law in turbine mode. Three operating points with different mass flow rates are simulated. ...The results of numerical simulation show that, the amplitude and frequency of pressure fluctuations in different positions are very different. The transfer law of amplitude and frequency of pressure fluctuations change with different position and different mass flow rate. Blade passing frequency (BPF) is the first dominant frequency in vaneless space, while component in this frequency got smaller in the upstream and downstream of vaneless space when the mass flow is set. Furthermore triple blade passing frequency (3BPF) component obtained a different transfer law through the whole flow passage. The amplitude and frequency of pressure fluctuations is also different in different circumference position of vaneless space. When the mass flow is different, the distribution of pressure fluctuations in circumference is different. The frequency component of pressure fluctuations in all the positions is different too.
In current work, effects of rapid thermal annealing on the interface chemical bonding states, band alignment, and electrical properties of atomic-layer-deposition-derived HfAlO/Al2O3 gate stack on Si ...substrates have been studied by X-ray photoemission spectroscopy (XPS), UV–Vis transmission spectroscopy, and electrical measurements. XPS analyses have shown that HfAlO alloy and mixed silicate (Hf-Al-O-Si) increase after post-deposition annealing process. By means of UV–Vis transmission spectroscopy measurements, reduction in band gap for 400oC-annealed sample has been observed. Accordingly, reduction in the valence band offset and increase in the conduction band offset have been detected for HfAlO/Al2O3/Si gate stack annealed at 400 °C. Various current conduction mechanisms, such as Poole-Frenkel emission, Fowler-Nordheim (FN) tunneling, and space-charge-limited (SCL) conduction, have been analyzed. Detailed electrical measurements reveal that current conduct mechanisms is SCL conduction at lower field region and FN tunneling and SCL conduction are dominant conduction mechanism at higher field region.
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•ALD-derived have been deposited on Si substrates.•Decrease in Eg and increase in ΔEc is observed for 400 °C-annealed sample.•HfAlO/Al2O3 gate stack annealed at 400 °C displays excellent performance.•The leakage current conduction mechanisms are also discussed for all samples.
To evaluate the clinical outcomes of thoracic endovascular aortic repair (TEVAR) in the treatment of Stanford type B aortic dissection (TBAD) in Marfan syndrome patients who had no history of aortic ...arch replacement.
This is a retrospective case-series study. From January 2009 to December 2019,the clinical data of Marfan syndrome patients who underwent TEVAR for TBAD at the Department of Vascular Surgery were collected. A total of 23 patients were enrolled,including 15 males and 8 females. The age was (38.0±11.0) years (range:24 to 56 years). Among them,12 patients had history of ascending aortic surgery. Details of TEVAR,perioperative complications and reintervention were recorded and survival rate was analyzed by Kaplan-Meier curve.
Technical success was 91.3% (21/23). Two patients with technical failure were as follows:one patient had type Ⅰa endoleak at the completion angiography,which healed spontaneously during the follow-up,and the other patient suffered aortic intimal intussusception after the deploym
Three new 2,2'-dipyridylamino functionalized pyrene derivatives, 1-pyrenyl-2,2'-dipyridylamine (1), 4-(1pyrenyl)phenyl-2,2'-dipyridylamine (2), and 4-4'-(1-pyrenyl)biphenyl-2,2'-dipyridylamine (3) ...have been synthesized and fully characterized. For comparison of electronic properties, a diphenylamino functionalized molecule 4-4'-(1-pyrenyl)biphenyldiphenylamine (4) has also been synthesized. Compounds 1-4 are bright blue emitters in solution and in the solid state with lambda max at ~420-460 nm and a high emission efficiency in solution. All four compounds form amorphous glasses with Tg values of 66 DGC, 79 DGC, 165 DGC, and 98 DGC, respectively. The electronic properties of the four compounds were examined by spectroscopic methods, cyclic voltammetry and Gaussian 98 molecular orbital calculations. The utilities of this class of molecules in OLEDs have been demonstrated by EL devices of compounds 3 and 4, which showed that 3 can function as a bright blue emitter and an electron transport material in a double-layer device while 4 can function as a bright blue emitter and a hole transport molecule in a triple-layer device. The dipyridylamino functional group in molecules 1-3 are capable of chelating to metal ions such as Zn(II) as demonstrated by the synthesis and structure of the complex 2(Zn(O2CCF3)22 (5). The binding of Zn(II) ions to the dipyridyl group causes a reduction of the emission efficiency of the ligand 2.
Four monodisperse starburst oligomers bearing a 4,4′,4″‐tris(carbazol‐9‐yl)‐triphenylamine (TCTA) core and six oligofluorene arms are synthesized and characterized. The lengths of oligofluorene arms ...vary from one to four fluorene units, giving the starburst oligomers molecular weights ranging from 3072 to 10 068 Da (1 Da = 1.66 × 10–27 kg). All of the starburst oligomers have good film‐forming capabilities, and display bright, deep‐blue fluorescence (λmax = 395–416 nm) both in solution and in the solid state, with the quantum efficiencies of the films (ΦPL) varying between 27 and 88 %. Electrochemical studies demonstrate that these materials have large energy gaps, and are stable for both p‐doping and n‐doping processes. Electroluminescent devices are successfully fabricated using these materials as hole‐transporting emitters, and emit deep‐blue light. Devices with luminance values up to 1025 cd m–2 at 11 V and luminous efficiencies of 0.47 cd A–1 at 100 cd m–2 have been produced, which translates to an external quantum efficiency of 1.4 %. In addition, these large‐energy‐gap starburst oligomers are good host materials for red electrophosphorescence. The luminance of the red electrophosphorescent devices is as high as 4452 cd m–2, with a luminous efficiency of 4.31 cd A–1 at 15 mA cm–2: This value is much higher than those obtained from the commonly used hole‐transporting materials, such as poly(vinyl carbazole) (PVK) (1.10 cd A–1 at 16 mA cm–2).
Four monodisperse starburst oligomers bearing a 4,4′,4″‐tris(carbazol‐9‐yl)‐triphenylamine core and six uniform oligofluorene arms are synthesized (see figure). They display excellent photoluminescence and electroluminescence properties as hole‐transporting materials and deep‐blue‐light emitters; they also perform well as the host material for red‐electrophosphorescence emitters.
This study aims to compare the efficacy and adverse reactions of bortezomib for treating newly diagnosed multiple myeloma (MM) through two different administration methods: intravenous (IV) injection ...and subcutaneous (SC) injection.
A retrospective analysis was performed in 205 patients with newly diagnosed MM, who were treated by the Department of Hematopathology, Henan Cancer Hospital, from June 2009 to December 2017. These patients were divided into two groups according to the treatment methods: IV injection group, IV injection of bortezomib; SC injection group, SC injection of bortezomib.
After the first course of treatment, the effect of very good partial remission (VGPR) or above (≥VGPR) in the IV injection group (IV group) and SC injection group (SC group) was 31.0% and 14.3%, respectively (
=0.004), while the overall response rate (ORR) was 72.0% and 49.5%, respectively (
=0.001). From the 2nd course to the 6th course of treatment, the ORR was not statistically different between these two groups. No significant difference was found in median progression-free survival (37 vs 45 months) and overall survival (63 vs 59 months). A lower frequency of adverse events, especially Grade 3 peripheral neuropathy, was observed in SC group compared with the IV group.
Compared with IV administration, SC bortezomib can provide a better balance between efficacy and toxicity.
Current conduction mechanisms of Hf1−xTixO2-gated metal–oxide–semiconductor (MOS) capacitors depending on various post-annealing temperature (PDA) have been investigated. The sample subjected to ...400 °C annealing exhibits superior performance with negligible hysteresis memory window shift (ΔVfb = 0.005 V) and lowest gate leakage current density (5.4 × 10−5 A/cm−2 at Vg = 2 V). In addition, evolution of density of interface traps (Dit), border charger density (Not) and oxide charge density (Qox) as a function of annealing temperature were investigated in details. Detailed electrical measurements reveal that the dominant current conduction behaviors are Poole–Frankel (P–F) emission in the region of low electric fields and Schottky Emission (SE) in the region of high electric fields for gate injection. For substrate injection, however, is mainly via Ohm's conduction, Schottky emission (SE) conduction mechanism serves in low applied field in the samples, respectively.
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•TiO2-doped HfO2 gate dielectrics have been deposited on Si substrates by sputtering.•Current-conduction mechanisms based on sputtered Hf1−xTixO2 as gate dielectric have been investigated.•Different current mechanisms at different field region have been determined precisely.
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