Rezultati iskanja Lue, Hang-Ting

181.	A study of barrier engineered Al2O3 and HfO2 high-K charge trapping devices (BE-MAONOS and BE-MHONOS) with optimal high-K thickness Sheng-Chih Lai; Chih-Ping Chen; Pei-Ying Du ... 2010 IEEE International Memory Workshop Conference Proceeding The behavior of barrier engineered charge trapping devices incorporating Al 2 O 3 and HfO 2 high-K layers has been critically examined. We propose to use a thicker buffer oxide (≫ 6 nm) and thin ...	Celotno besedilo Dostopno za: IJS, NUK, UL, UM
182.	A novel p-channel NAND-type flash memory with 2-bit/cell operation and high programming throughput (> 20 MB/sec) Hang-Ting Lue; Szu-Yu Wang; Erh-Kun Lai ... IEEE InternationalElectron Devices Meeting, 2005. IEDM Technical Digest, 2005 Conference Proceeding A novel p-channel NAND-type non-volatile flash memory using nitride-trapping device is presented. The p-channel device is programmed by very efficient band-to-band tunneling hot electron (BBHE), and ...	Celotno besedilo Dostopno za: IJS, NUK, UL, UM
183.	A novel method to characterize the dielectric and interfacial properties of Ba0.5Sr0.5TiO3 (BST)/Si by microwave measurement LUE, Hang-Ting; TSENG, Tseung-Yuen; HUANG, Guo-Wei 2002 Conference Proceeding	Celotno besedilo Dostopno za: IJS, NUK, UL, UM
184.	The fabrication and study of NbN,Nb and Ti thin films by DC sputtering and microwave surface impedance measurement of superconducting thin films Hang-Tin Lue; 呂函庭 Dissertation 碩士國立清華大學物理學系 87	Preverite dostopnost

181.

A study of barrier engineered Al2O3 and HfO2 high-K charge trapping devices (BE-MAONOS and BE-MHONOS) with optimal high-K thickness
Sheng-Chih Lai; Chih-Ping Chen; Pei-Ying Du ... 2010 IEEE International Memory Workshop
Conference Proceeding

The behavior of barrier engineered charge trapping devices incorporating Al 2 O 3 and HfO 2 high-K layers has been critically examined. We propose to use a thicker buffer oxide (≫ 6 nm) and thin ...

Celotno besedilo

Dostopno za: IJS, NUK, UL, UM

182.

A novel p-channel NAND-type flash memory with 2-bit/cell operation and high programming throughput (> 20 MB/sec)
Hang-Ting Lue; Szu-Yu Wang; Erh-Kun Lai ... IEEE InternationalElectron Devices Meeting, 2005. IEDM Technical Digest, 2005
Conference Proceeding

A novel p-channel NAND-type non-volatile flash memory using nitride-trapping device is presented. The p-channel device is programmed by very efficient band-to-band tunneling hot electron (BBHE), and ...