Abstract
Summary:
Thin films of cerium dioxide were deposited on silicon (100) substrates using e‐beam evaporation. The influence of different technological parameters, such as the substrate ...temperature, the oxygen pressure and the beam power on the crystallographic orientation of the films was explored. By optimizing these parameters, CeO
2
thin films with a strongly preferred (200) orientation could be deposited on Si(100) substrates.
XRD patterns of the CeO
2
thin films deposited at various temperatures.
image
XRD patterns of the CeO
2
thin films deposited at various temperatures.
Thin films of cerium dioxide were deposited on silicon (100) substrates using e‐beam evaporation. The influence of different technological parameters, such as the substrate temperature, the oxygen ...pressure and the beam power on the crystallographic orientation of the films was explored. By optimizing these parameters, CeO2 thin films with a strongly preferred (200) orientation could be deposited on Si(100) substrates.
XRD patterns of the CeO2 thin films deposited at various temperatures.
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