Merkel cell carcinoma (MCC) is a rare, clinically aggressive neuroendocrine carcinoma of the skin; MCC is 40 times less common as compared to melanoma. The most frequently reported sites have been ...the head and neck, extremities, and trunk. Potential mimics include malignant melanoma, lymphoma, or metastatic small cell (neuroendocrine) carcinomas. Histopathology of MCC resembles small cell carcinoma both morphologically and on IHC. The possible cell of origin was proposed as the Merkel cell, which functions as a mechanoreceptor. It has a high chance of local recurrence, regional and distant spread. In recent times, Merkel cell polyomavirus has been implicated as the causative agent for this tumor. The same agent has a reported etiologic association with other skin lesions, including seborrheic keratosis.
Celotno besedilo
Dostopno za:
DOBA, IZUM, KILJ, NUK, PILJ, PNG, SAZU, SIK, UILJ, UKNU, UL, UM, UPUK
The unique features of graphene materials make them excellent catalysts for photodegradation and energy applications. In the present work, CeO2/reduced graphene oxide (rGO) nanocomposites were ...prepared by a simple one-pot hydrothermal method. The nanocomposite is found to have a mesoporous structure with a surface area of 100.129 m2g−1. With the preferentially small surface area of the nanocomposite and the ability of the rGO to act as electron acceptor, the CeO2/rGO photocatalyst supresses the electron-pair recombination during photodegradation, thereby achieving a quick and efficient degradation of Direct Green dye. Under the influence of UV light, the CeO2/rGO degrades 84.1% of the dye which is 1.5 times more efficient than blank CeO2. Further, due to the conducting nature of rGO, the nanocomposites have also been evaluated for their electrochemical performance. It has been found that the addition of rGO results in a high capacitance (410.8 Fg−1 at current density of 1.0 Ag−1) and stability (94% after 500 cycles) of the CeO2/rGO electrode. The present work projects the excellent charge transport capability of rGO based CeO2 nanomaterials for dual applications in the areas of photocatalysis and electrocatalysis.
This paper discusses the historical role that SiGe has played in driving the CMOS scaling roadmap, including discussion of NMOS biaxial strain and PMOS uniaxial strain. The paper also discusses the ...potential future role that Ge or SiGe may play in CMOS scaling as a high mobility replacement for the Si channel. Challenges such as poor quality germanium oxide and the small Ge bandgap are reviewed in light of recent developments (high-k metal gate, and ultra-thin body devices) in MOSFET scaling.
A 21 year old female presented with amenorrhea, hirsutism and change in voice along with an elevated serum β-HCG (human chorionic gonadotrophin) level and normal CA-125 level. Laparotomy revealed an ...enlarged right ovary measuring 6 × 5 × 1 cms with presence of an ovarian hemangioma along with stromal luteinization and HCG producing mononucleate as well as multinucleate cells of uncertain histogenesis on histopathological examination. Immunohistochemistry for inhibin and calretinin were positive in the luteinized component whereas β-HCG and Ki-67 were positive in the multinucleate cell component. The diagnostic rarity and therapeutic dilemma of such a rare mixed tumor within a single ovary has proven to be an exceptional case and an excellent investigative opportunity.
Celotno besedilo
Dostopno za:
DOBA, IZUM, KILJ, NUK, PILJ, PNG, SAZU, SIK, UILJ, UKNU, UL, UM, UPUK
A leading-edge 90-nm technology with 1.2-nm physical gate oxide, 45-nm gate length, strained silicon, NiSi, seven layers of Cu interconnects, and low-/spl kappa/ CDO for high-performance dense logic ...is presented. Strained silicon is used to increase saturated n-type and p-type metal-oxide-semiconductor field-effect transistors (MOSFETs) drive currents by 10% and 25%, respectively. Using selective epitaxial Si/sub 1-x/Ge/sub x/ in the source and drain regions, longitudinal uniaxial compressive stress is introduced into the p-type MOSEFT to increase hole mobility by >50%. A tensile silicon nitride-capping layer is used to introduce tensile strain into the n-type MOSFET and enhance electron mobility by 20%. Unlike all past strained-Si work, the hole mobility enhancement in this paper is present at large vertical electric fields in nanoscale transistors making this strain technique useful for advanced logic technologies. Furthermore, using piezoresistance coefficients it is shown that significantly less strain (/spl sim/5 /spl times/) is needed for a given PMOS mobility enhancement when applied via longitudinal uniaxial compression versus in-plane biaxial tension using the conventional Si/sub 1-x/Ge/sub x/ substrate approach.
Introduction
Persistent EBV DNAemia (PEBV) is associated with late‐onset PTLD. The efficacy of rituximab in PEBV is not conclusive. We monitored PEBV and DSA in pediatric kidney transplant patients ...with or without rituximab.
Methods
13 PEBV patients received standard treatment with immunosuppression reduction and valganciclovir, with or without IVIG; 5/13 were further treated with rituximab.
Results
All Rituximab‐treated and 6/7 No‐Rituximab patients were EBV seronegative at transplant and seroconverted post‐transplant. Peak EBV PCR levels were lower in No‐Rituximab than Rituximab patients and all No‐Rituximab patients cleared PEBV after standard treatment. Additional 1‐2 doses of rituximab reduced EBV PCR levels in all 5 Rituximab patients, 3 cleared PEBV. One No‐Rituximab patient developed localized PLTD. None of Rituximab patients developed de novo DSA, while 4/8 No‐Rituximab patients did: 2/4 had ABMR. 1/5 Rituximab and 5/8 No‐Rituximab patients had acute rejection. There was no change in eGFR between pre‐EBV DNAemia and follow‐up in Rituximab patients, while reduction in No‐Rituximab patients was found. There was no difference in graft and patient survival.
Conclusions
While early intervention with rituximab in pediatric patients with PEBV may reduce viral load and PTLD, we observed a slower development of de novo DSA, and rejection and maintenance of eGFR.
Strained-silicon (Si) is incorporated into a leading edge 90-nm logic technology . Strained-Si increases saturated n-type and p-type metal-oxide-semiconductor field-effect transistors (MOSFETs) drive ...currents by 10 and 25%, respectively. The process flow consists of selective epitaxial Si/sub 1-x/Ge/sub x/ in the source/drain regions to create longitudinal uniaxial compressive strain in the p-type MOSFET. A tensile Si nitride-capping layer is used to introduce tensile uniaxial strain into the n-type MOSFET and enhance electron mobility. Unlike past strained-Si work: 1) the amount of strain for the n-type and p-type MOSFET can be controlled independently on the same wafer and 2) the hole mobility enhancement in this letter is present at large vertical electric fields, thus, making this flow useful for nanoscale transistors in advanced logic technologies.
The first paper describes Ge-Channel MOSFETs with S/D formed by metal-induced dopant activation. The second paper describes interface engineering and characterization of Hi-K in Ge MOSFET with 1nm ...EOT. The third paper relates to fabrication of ultra-thin GeOI MOSFETs. The fourth paper describes InGaAs MOSFETs with in-situ PH3 surface plasma passivated HfAlO/TaN and HfO 2 /TaN gate stacks. The fifth paper in this session describes Fluorinated HfO2 gate stacks for CMOS for improved reliability. The last paper relates to control of threshold voltage variability in Hi-k-metal Gate stacks through control of grain size and crystallinity in metal gates.
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