Rezultati iskanja O'Driscoll, Luke J

zadetkov: 2

1.	High-performance nMOSFETs using a novel strained Si/SiGe CMOS architecture Olsen, S.H.; O'Neill, A.G.; Driscoll, L.S. ... IEEE transactions on electron devices, 09/2003, Letnik: 50, Številka: 9 Journal Article Recenzirano Odprti dostop Performance enhancements of up to 170% in drain current, maximum transconductance, and field-effect mobility are presented for nMOSFETs fabricated with strained-Si channels compared with identically ...	Celotno besedilo Dostopno za: IJS, NUK, UL PDF
2.	Study of single- and dual-channel designs for high-performance strained-Si-SiGe n-MOSFETs Olsen, S.H.; O'Neill, A.G.; Chattopadhyay, S. ... IEEE transactions on electron devices, 08/2004, Letnik: 51, Številka: 8 Journal Article Recenzirano Results comparing strained-Si-SiGe n-channel MOSFET performance of single-and dual-surface channel devices fabricated using 15% Ge content SiGe virtual substrates are presented. Device fabrication ...	Celotno besedilo Dostopno za: IJS, NUK, UL

Rezultati iskanja