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Trenutno NISTE avtorizirani za dostop do e-virov konzorcija SI. Za polni dostop se PRIJAVITE.

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zadetkov: 812
21.
Celotno besedilo
Dostopno za: GEOZS, IJS, IMTLJ, KILJ, KISLJ, NLZOH, NUK, OILJ, PNG, SAZU, SBCE, SBJE, UILJ, UL, UM, UPCLJ, UPUK, ZAGLJ, ZRSKP
22.
  • GaAs MESFETs fabricated on ... GaAs MESFETs fabricated on Si substrates using a SrTiO3 buffer layer
    Eisenbeiser, K.; Emrick, R.; Droopad, R. ... IEEE electron device letters, 2002-June, 20020601, Letnik: 23, Številka: 6
    Journal Article
    Recenzirano

    Heteroepitaxial growth of GaAs on an Si substrate has been achieved through the use of crystalline SrTiO 3 (STO) and amorphous SiO 2 buffer layers. The buffer layers serve to accommodate some of the ...
Celotno besedilo
Dostopno za: IJS, NUK, UL
23.
Celotno besedilo

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24.
Celotno besedilo
Dostopno za: GEOZS, IJS, IMTLJ, KILJ, KISLJ, NLZOH, NUK, OILJ, PNG, SAZU, SBCE, SBJE, UILJ, UL, UM, UPCLJ, UPUK, ZAGLJ, ZRSKP
25.
Celotno besedilo
Dostopno za: GEOZS, IJS, IMTLJ, KILJ, KISLJ, NLZOH, NUK, OILJ, PNG, SAZU, SBCE, SBJE, UILJ, UL, UM, UPCLJ, UPUK, ZAGLJ, ZRSKP

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26.
Celotno besedilo
Dostopno za: GEOZS, IJS, IMTLJ, KILJ, KISLJ, NLZOH, NUK, OILJ, PNG, SAZU, SBCE, SBJE, UILJ, UL, UM, UPCLJ, UPUK, ZAGLJ, ZRSKP
27.
  • Advances in heteroepitaxy o... Advances in heteroepitaxy of oxides on silicon
    Yu, Z.; Liang, Y.; Overgaard, C. ... Thin solid films, 09/2004, Letnik: 462, Številka: Complete
    Journal Article
    Recenzirano

    Direct epitaxy of high-quality perovskite oxides on silicon paves the way for their integration with Si microelectronics. At Motorola Labs, we have achieved heteroepitaxy of high-quality perovskite ...
Celotno besedilo
Dostopno za: GEOZS, IJS, IMTLJ, KILJ, KISLJ, NUK, OILJ, PNG, SAZU, SBCE, SBJE, UL, UM, UPCLJ, UPUK
28.
  • Self-aligned GaAs p-channel... Self-aligned GaAs p-channel enhancement mode MOS heterostructure field-effect transistor
    Passlack, M.; Abrokwah, J.K.; Droopad, R. ... IEEE electron device letters, 09/2002, Letnik: 23, Številka: 9
    Journal Article
    Recenzirano

    Self-aligned GaAs enhancement mode MOS heterostructure field-effect transistors (MOS-HFET) have been successfully fabricated for the first time. The MOS devices employ a Ga 2 O 3 gate oxide, an ...
Celotno besedilo
Dostopno za: IJS, NUK, UL
29.
  • User involvement in develop... User involvement in developing community-based public health services: a scoping review of methods
    Petersen, K S; Pedersen, J F; Egilstroed, B ... European journal of public health, 09/2020, Letnik: 30, Številka: Supplement_5
    Journal Article
    Recenzirano
    Odprti dostop

    Abstract Background User involvement in developing community-based public health services has been on the agenda for decades. User involvement refers to the variety of ways in which service users or ...
Celotno besedilo
Dostopno za: NUK, OILJ, UL, UM, UPUK, VSZLJ

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30.
  • Impact of maternal mental h... Impact of maternal mental health problems on perinatal outcomes for the infant
    Christensen, L F; Heuckendorff, S; Fonager, K ... European journal of public health, 09/2020, Letnik: 30, Številka: Supplement_5
    Journal Article
    Recenzirano
    Odprti dostop

    Abstract Background Mounting evidence suggests that mental health problems in pregnant women may negatively affect the intra- and extrauterine health and development of the child. This is especially ...
Celotno besedilo
Dostopno za: NUK, OILJ, UL, UM, UPUK, VSZLJ

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zadetkov: 812

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