From the process integration point of view, the introduction of new materials (e.g. copper conductors, high and low k dielectrics) will be the most difficult challenge for semiconductor manufacturing ...in 21st century. In a paradigm shift, understanding the role of defects and how they affect yield will be similarly important. Not all the defects are killer defects, and having the ability to detect the important yield-reducing defects in a particular step will be vital. In this paper, we have focused on the major issues related to defects and process integration (e.g. introduction of new materials, new processes, new tools etc.) for a new understanding of defects that can lead to the development of sub-100 nm silicon ICs. The defect reduction and yield improvement constraints require process control techniques capable of handling large amounts of defect data. In the deep sub-100 nm realm, this will force us to look for process simplification in order to reduce complex manufacturing operations.
n-type dopant diffusion during sub-millisecond (ms) non-melt laser annealing (NLA) is investigated through the experiments and atomistic KMC modeling. Laser-only annealing can improve the n-type ...dopant activation and achieve shallow junctions. KMC model with vacancy complexes indicates that laser-only annealing for nFET can achieve highly activated junctions and reduce dopant fluctuations in the channel region and that P is an attractive replacement for the As extension with laser-only anneal.
This paper presents the benefits of both co-implantation of diffusion-retarding species and ultra-fast annealing techniques as studied on blanket and device wafers. F and C co-implantation with B+ ...for PMOS and P+ for NMOS combined with conventional spike annealing produce reduced junction depths and improved dopant activation and profile abruptness, as measured on blanket wafers and compared to similar implants without the co-implanted species. Device wafers show that the overlap capacitance is reduced, consistent with the shallower junction depths and reduced lateral diffusion. The improved dopant activation manifests itself in reduced series resistance and improved Ion values. Depending on the implant conditions, either the gate/extension overlap capacitance or the series resistance can be improved when sub-melt laser annealing is used instead of conventional spike anneal. For both approaches, scanning spreading resistance microscopy (SSRM) measurements confirm the shallow junction depths and reduced lateral diffusion.
Class II malocclusion cases possess a constant challenge to orthodontists since time immemorial. Mandibular retrusion is the most common feature of class II malocclusion, rather than maxillary ...prognathism. Association of class II with asymmetry, a condition called asymmetric mandibular retrognathia (AMR), gives a tougher challenge to orthodontists for management. The following case presents effective management of AMR using differential loading technique. A young boy aged 12 years presented with mandibular retrognathia associated with facial asymmetry. He was treated with a differential force loading technique using a fixed functional appliance. RESULTSImproved facial profile with increased mandibular length achieved. A significant reduction in facial asymmetry was also appreciable. CONCLUSIONDifferential force loading technique using fixed functional appliance while being least troublesome for the patient may prove beneficial to harness excellent and satisfactory results with minimal efforts in such cases of mandibular retrusion with facial asymmetries and also decrease the need for surgical correction. HOW TO CITE THIS ARTICLEParihar AV, Angamuthu KP, Sahoo R, et al. Management of Asymmetric Mandibular Retrognathia with Differential Loading Technique: A Case Report. Int J Clin Pediatr Dent 2021;14(S-1):S107-S113.
We report a new surface accumulation layer transistor (SALTran) on SOI which uses the concept of surface accumulation of electrons near the emitter contact to improve the current gain significantly. ...Using two-dimensional process and device simulation, the performance of the proposed device has been evaluated in detail by comparing its characteristics with those of the previously published conventional bipolar transistor structure. From our simulation results, it is observed that depending on the choice of emitter doping and emitter length, the proposed SALTran exhibits a current gain enhancement of 10 to 70 times that of the compatible bipolar transistor. We also demonstrate that the presence of the surface accumulation layer does not deteriorate the cut-off frequency as observed in the high-low emitter junction bipolar transistors. Our simulations also indicate that when the emitter is lightly doped, the SALTran is immune to hot carrier injection problems due to the reduced electric field in the emitter. The effect of surface states at the emitter contact and temperature on current gain have been examined.
In order to improve driver performance of PNP transistor high current gain is required but PNP transistor exhibits low current gain due to poor hole mobility. In this paper a novel high current gain ...lateral PNP transistor on SOI for complementary bipolar technology is presented. The paper also presents the demonstration of a significant current gain enhancement in a PNP transistor using simple surface accumulation layer transistor that is compatible with standard BiCMOS technology.
In a model of relativistic heavy-ion collisions wherein the unconfined quark-gluon plasma is condensed into glass, we derive the Vogel-Fulcher-Tammann cooling law. This law is well known to hold true ...in condensed matter glasses. The high-energy plasma is initially created in a very hot negative temperature state and cools down to the Hagedorn glass temperature at an ever decreasing rate. The cooling rate is largely determined by the QCD string tension derived from hadronic Regge trajectories. The ultimately slow relaxation time is a defining characteristic of a color glass condensate.
Until recently, furnace processing had been one of the most popular methods for the manufacturing of the entire spectrum of semiconductor devices. As a result of shrinking device geometries and ...increasing wafer size, current trends are in the direction of single wafer processing. There is also a drive towards methods that address the long term requirements for reduced microscopic defects, lower processing temperatures, lower cost of ownership, reduced cycle times, smaller feature sizes and environmentally friendly processing of future generations of integrated circuits. The drive towards such an innovative process has stimulated higher heating and cooling rates along with the compatibility with single wafer technology make rapid thermal processing (RTP) as one of the most promising new thermal processing techniques. Recently introduced minifurnaces as well as RTP systems based on resistive heaters can also provide compatible heating and cooling rates. However, in terms of microscopic defeat reduction, thermal and residual stress reduction, as well as other processing needs, resistive heaters based RTP or minifurnaces do not offer any advantages over conventional furnace processing. Recently, we have shown that ultra violet (UV) and vacuum ultra violet (VUV) light sources when used in conjunction with tungsten halogen lamps based RTP can provide a process with lowest microscopic defects, lowest thermal and residual stress as well as built in green manufacturing feature. Rapid photothermal processing (RPP) also providing a platform for some of the fastest cycle times ever reported. This paper presents new results about the importance of RPP in achieved the desired performance of future semiconductor devices.
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