High-performance top-gated carbon nanotube field-effect transistors (CNT FETs) with a gate length of 5 nanometers can be fabricated that perform better than silicon complementary metal-oxide ...semiconductor (CMOS) FETs at the same scale. A scaling trend study revealed that the scaled CNT-based devices, which use graphene contacts, can operate much faster and at much lower supply voltage (0.4 versus 0.7 volts) and with much smaller subthreshold slope (typically 73 millivolts per decade). The 5-nanometer CNT FETs approached the quantum limit of FETs by using only one electron per switching operation. In addition, the contact length of the CNT CMOS devices was also scaled down to 25 nanometers, and a CMOS inverter with a total pitch size of 240 nanometers was also demonstrated.
An efficient way to reduce the power consumption of electronic devices is to lower the supply voltage, but this voltage is restricted by the thermionic limit of subthreshold swing (SS), 60 millivolts ...per decade, in field-effect transistors (FETs). We show that a graphene Dirac source (DS) with a much narrower electron density distribution around the Fermi level than that of conventional FETs can lower SS. A DS-FET with a carbon nanotube channel provided an average SS of 40 millivolts per decade over four decades of current at room temperature and high device current
of up to 40 microamperes per micrometer at 60 millivolts per decade. When compared with state-of-the-art silicon 14-nanometer node FETs, a similar on-state current
is realized but at a much lower supply voltage of 0.5 volts (versus 0.7 volts for silicon) and a much steeper SS below 35 millivolts per decade in the off-state.
Textile triboelectric nanogenerators for human respiratory monitoring with machine washability are developed through loom weaving of Cu‐PET and PI‐Cu‐PET yarns. Triboelectric charges are generated at ...the yarn crisscross intersections to achieve a maximum short circuit current density of 15.50 mA m–2. By integrating into a chest strap, human respiratory rate and depth can be monitored.
The selective detection and separation of target ions or molecules is an intriguing issue. Herein, a novel supramolecular organic framework (SOF‐THBP) was constructed by bis‐thioacetylhydrazine ...functionalized pillar5arenes. The SOF‐THBP shows a fluorescent response for Fe3+, Cr3+, Hg2+ and Cu2+ ions. The xerogel of SOF‐THBP shows excellent recyclable separation properties for these metal ions and the absorption rates were up to 99.29 %. More interestingly, by rationally introducing these metal ions into the SOF‐THBP, a series of metal‐ion‐coordinated SOFs (MSOFs) such as MSOF‐Fe, MSOF‐Hg and MSOF‐Cu were constructed. These metal ions coordinated MSOFs could selectively sense F−, Br−, and l‐Cys, respectively. The detection limits of these MSOFs for F−, Br− and l‐Cys were about 10−8 m.
Multi‐Functional SOFs: A novel supramolecular organic framework (SOF‐THBP) was constructed by functionalized pillar5arenes. By rationally introducing metal ions into the SOF‐THBP, a series of metal‐ion‐coordinated SOFs (MSOFs) were constructed. The SOF‐THBP shows excellent recyclable separation properties for Cr3+, Hg2+, etc. The MSOFs could selectively and sensitively sense F−, Br−, and l‐Cys, respectively.
Single-walled carbon nanotubes (CNTs) may enable the fabrication of integrated circuits smaller than 10 nanometers, but this would require scalable production of dense and electronically pure ...semiconducting nanotube arrays on wafers. We developed a multiple dispersion and sorting process that resulted in extremely high semiconducting purity and a dimension-limited self-alignment (DLSA) procedure for preparing well-aligned CNT arrays (within alignment of 9 degrees) with a tunable density of 100 to 200 CNTs per micrometer on a 10-centimeter silicon wafer. Top-gate field-effect transistors (FETs) fabricated on the CNT array show better performance than that of commercial silicon metal oxide-semiconductor FETs with similar gate length, in particular an on-state current of 1.3 milliamperes per micrometer and a recorded transconductance of 0.9 millisiemens per micrometer for a power supply of 1 volt, while maintaining a low room-temperature subthreshold swing of <90 millivolts per decade using an ionic-liquid gate. Batch-fabricated top-gate five-stage ring oscillators exhibited a highest maximum oscillating frequency of >8 gigahertz.
Carbon nanotube-based flexible electronics Xiang, Li; Zhang, Heng; Hu, Youfan ...
Journal of materials chemistry. C, Materials for optical and electronic devices,
2018, Letnik:
6, Številka:
29
Journal Article
Recenzirano
The simultaneous extraordinary electrical and mechanical properties of carbon nanotubes (CNTs) make them ideally suitable for flexible electronics, especially high-performance flexible integrated ...circuits (ICs), which are the core units of electronic systems for information processing. This paper reviews the recent progresses of high-performance flexible ICs based on CNTs, involving the performance boosting CNT-based thin-film transistors, the implementation of complementary metal-oxide-semiconductor (CMOS) circuits, and the realization of medium-to-large scale integrated circuits and monolithic three-dimension integration. Several examples of system-level applications are also presented, including active-matrix backplanes for flexible display and signal manipulating for sensing. The article ends with a perspective on CNT-based flexible electronics.
A review of CNT-based high-performance flexible ICs, including the recent progresses of this technology and emerging implementation of this technology in system-level applications.
Abstract
Intrinsic antiferromagnetism in van der Waals (vdW) monolayer (ML) crystals enriches our understanding of two-dimensional (2D) magnetic orders and presents several advantages over ...ferromagnetism in spintronic applications. However, studies of 2D intrinsic antiferromagnetism are sparse, owing to the lack of net magnetisation. Here, by combining spin-polarised scanning tunnelling microscopy and first-principles calculations, we investigate the magnetism of vdW ML CrTe
2
, which has been successfully grown through molecular-beam epitaxy. We observe a stable antiferromagnetic (AFM) order at the atomic scale in the ML crystal, whose bulk is ferromagnetic, and correlate its imaged zigzag spin texture with the atomic lattice structure. The AFM order exhibits an intriguing noncollinear spin reorientation under magnetic fields, consistent with its calculated moderate magnetic anisotropy. The findings of this study demonstrate the intricacy of 2D vdW magnetic materials and pave the way for their in-depth analysis.
Solution-derived carbon nanotube (CNT) network films with high semiconducting purity are suitable materials for the wafer-scale fabrication of field-effect transistors (FETs) and integrated circuits ...(ICs). However, it is challenging to realize high-performance complementary metal-oxide semiconductor (CMOS) FETs with high yield and stability on such CNT network films, and this difficulty hinders the development of CNT-film-based ICs. In this work, we developed a doping-free process for the fabrication of CMOS FETs based on solution-processed CNT network films, in which the polarity of the FETs was controlled using Sc or Pd as the source/drain contacts to selectively inject carriers into the channels. The fabricated top-gated CMOS FETs showed high symmetry between the characteristics of n- and p-type devices and exhibited high-performance uniformity and excellent scalability down to a gate length of 1 μm. Many common types of CMOS ICs, including typical logic gates, sequential circuits, and arithmetic units, were constructed based on CNT films, and the fabricated ICs exhibited rail-to-rail outputs because of the high noise margin of CMOS circuits. In particular, 4-bit full adders consisting of 132 CMOS FETs were realized with 100% yield, thereby demonstrating that this CMOS technology shows the potential to advance the development of medium-scale CNT-network-film-based ICs.
Disordered biostructures are ubiquitous in nature, usually generating white or black colours due to their broadband optical response and robustness to perturbations. Through judicious design, ...disordered nanostructures have been realised in artificial systems, with unique properties for light localisation, photon transportation and energy harvesting. On the other hand, the tunability of disordered systems with a broadband response has been scarcely explored. Here, we achieve the controlled manipulation of disordered plasmonic systems, realising the transition from broadband absorption to tunable reflection through deterministic control of the coupling to an external cavity. Starting from a generalised model, we realise disordered systems composed of plasmonic nanoclusters that either operate as a broadband absorber or with a reconfigurable reflection band throughout the visible. Not limited to its significance for the further understanding of the physics of disorder, our disordered plasmonic system provides a novel platform for various practical application such as structural colour patterning.
Large-area monolayer WS2 is a desirable material for applications in next-generation electronics and optoelectronics. However, the chemical vapour deposition (CVD) with rigid and inert substrates for ...large-area sample growth suffers from a non-uniform number of layers, small domain size and many defects, and is not compatible with the fabrication process of flexible devices. Here we report the self-limited catalytic surface growth of uniform monolayer WS2 single crystals of millimetre size and large-area films by ambient-pressure CVD on Au. The weak interaction between the WS2 and Au enables the intact transfer of the monolayers to arbitrary substrates using the electrochemical bubbling method without sacrificing Au. The WS2 shows high crystal quality and optical and electrical properties comparable or superior to mechanically exfoliated samples. We also demonstrate the roll-to-roll/bubbling production of large-area flexible films of uniform monolayer, double-layer WS2 and WS2/graphene heterostructures, and batch fabrication of large-area flexible monolayer WS2 film transistor arrays.
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