A high-salt diet is one of the major risk factors in the development and maintenance of hypertension. Numerous experimental and observational studies have confirmed the association of sodium intake ...with blood pressure levels. The effects of a high-salt diet are related to the function of the renin-angiotensin system, which is normally suppressed by a high-salt diet. Endothelial dysfunction probably plays an important role in the influence of high sodium intake on blood pressure, although the exact mechanisms remain elusive. Genetic factors are known to be very important, and various consomic and congenic rat strains as animal models have proven to be very useful in bringing us a step closer to understanding the interaction between salt intake and hypertension. In this article, experimental data obtained in studies on animals and humans, as well as epidemiological data are reviewed.
High voltage CMOS pixel sensors will be or are proposed to be used in several particle physics experiments for particle tracking like Mu3e experiment. ATLASPIX3 is the first full reticle size ...monolithic HVCMOS sensor for construction of multi-chip modules. The specifications for the use case have been taken from ATLAS pixel upgrade in fifth layer where it was a candidate for. The size of the chip is 2.0×2.1 cm2 with periphery at one side which makes the chip 3-side buttable. ATLASPIX3 has been implemented in a standard 180 nm HVCMOS process. Each pixel has an area of 150×50μm2 and contains a large charge collecting electrode implemented as deep n-well. The depleted volume around the n-well is enlarged by a high voltage bias and the usage of higher resistivity substrate. The readout electronics supports both triggered and triggerless readout with zero-suppression. ATLASPIX3 could be used for the construction of CMOS modules for particle tracking in experiments where high time resolution, high radiation tolerance, low power and low material budget are required. In the design phase, special attention has been paid to decreasing timing differences between pixels and the rate capability of the readout.
In this work, we show the design and preliminary characterization of an image sensor with 64x64 pixels and its associated hardware and software needed to use the chip. The aim of the chip is to be ...used as a sensor for TEM electron microscopy. First measurements were done using X-Rays to characterize the chip and to test the whole system (ASIC, Software, and Hardware). The chip was tested with electrons inside an Electron Microscope at Thermo Fisher and it's functioning was checked. The chip was able to stand 50 Mrad of X-Ray and 3.6 Mrad of electrons total dose without decreasing considerably the performance.
Abstract Nowadays, cancer treatment with ion beam is well established and studied. This method allows to deposit the maximum dose to the tumor and minimize the damage to healthy tissue, due to the ...Bragg peak of the ion energy deposition near the end of the particle range. During the treatment, it is possible to provide volumetric dose delivery by changing the particle energy (penetration depth) and adjusting the beam position via a magnetic system. For the beam monitoring system, the precise measurement of the beam direction, shape and fluence in real time becomes crucial to provide effective and safe dose delivery to the tumor. Additionally, the system should work for beam intensities up to 10 10 s -1 for protons, be tolerant to 1 MeV neutron equivalent fluences up to 10 15 cm -2 per year and be to tolerant to magnetic fields (for MR-guided ion beam). The studies presented in this article are focused on the application of the HitPix sensor family with counting electronics and frame-based readout for such a beam monitoring system. The HitPix sensors are monolithic pixelated silicon sensors based on HV-CMOS technology and have been developed at the ASIC and Detector Lab (ADL, KIT). Recent measurements with ion beams and a multi-sensor readout as well as future developments are discussed.
Abstract
This contribution presents simulation results, implementation, and first tests of a
monolithic detector developed at KIT. It consists of a sensor diode tightly integrated with an
analogue ...front-end based on SiGe (Silicon-Germanium) SG13G2 130 nm BiCMOS technology produced at
the Leibniz Institute for High Performance Microelectronics (IHP). The pixel size is
100 μm × 100 μm, and the nwell charge collection node dimensions were reduced
to 10 μm × 10 μm. We investigate the influence of this approach on sensor
performance, spatial resolution via charge sharing and timing behaviour.
This paper describes the readout components for Belle II that have been designed as integrated circuits. The ICs are connected to DEPFET sensor by bump bonding. Three types of ICs have been ...developed: SWITCHER for pixel matrix control, DCD for readout and digitizing of sensor signals and DHP for digital data processing. The ICs are radiation tolerant and use several novel features, such as the multiple-input differential amplifiers and the fast and radiation hard high-voltage drivers. SWITCHER and DCD have been developed at University of Heidelberg, Karlsruhe Institute of Technology (KIT) and DHP at Bonn University. The IC-development started in 2009 and was accomplished in 2016 with the submissions of final designs. The final ICs for Belle II pixel detector and the related measurement results will be presented in this contribution.
Towards the large area HVCMOS demonstrator for ATLAS ITk Prathapan, M.; Benoit, M.; Casanova, R. ...
Nuclear instruments & methods in physics research. Section A, Accelerators, spectrometers, detectors and associated equipment,
08/2019, Letnik:
936
Journal Article
Recenzirano
High Voltage CMOS (HVCMOS) sensor is a proposed cost effective alternative to the existing hybrid sensors in ATLAS ITk pixel barrel for outer layers. To prove the feasibility of HVCMOS sensors in ...ATLAS experiment, a large area demonstrator chip is being designed. This work presents the design details of three HVCMOS sensor chips with an overview of the measurement results of ATLASpix1 which is the first large area (1 cm × 2 cm) prototype in 0.18μm process.
•Architecture overview of three monolithic CMOS detector prototypes.•A novel readout scheme called Content Addressable Buffer readout is proposed.•The proposed readout scheme is proven to be working under laboratory tests.
HV-CMOS pixel sensors are a promising option for the tracker upgrade of the ATLAS experiment at the LHC, as well as for other future tracking applications in which large areas are to be instrumented ...with radiation-tolerant silicon pixel sensors. We present results of testbeam characterisations of the 4th generation of Capacitively Coupled Pixel Detectors (CCPDv4) produced with the ams H18 HV-CMOS process that have been irradiated with different particles (reactor neutrons and 18 MeV protons) to fluences between 1×1014 and 5×10151−MeV−neq. The sensors were glued to ATLAS FE-I4 pixel readout chips and measured at the CERN SPS H8 beamline using the FE-I4 beam telescope. Results for all fluences are very encouraging with all hit efficiencies being better than 97% for bias voltages of 85V. The sample irradiated to a fluence of 1×1015neq—a relevant value for a large volume of the upgraded tracker—exhibited 99.7% average hit efficiency. The results give strong evidence for the radiation tolerance of HV-CMOS sensors and their suitability as sensors for the experimental HL-LHC upgrades and future large-area silicon-based tracking detectors in high-radiation environments.
High-voltage pixel sensors for ATLAS upgrade Perić, I.; Kreidl, C.; Fischer, P. ...
Nuclear instruments & methods in physics research. Section A, Accelerators, spectrometers, detectors and associated equipment,
11/2014, Letnik:
765
Journal Article
Recenzirano
Odprti dostop
The high-voltage (HV-) CMOS pixel sensors offer several good properties: a fast charge collection by drift, the possibility to implement relatively complex CMOS in-pixel electronics and the ...compatibility with commercial processes. The sensor element is a deep n-well diode in a p-type substrate. The n-well contains CMOS pixel electronics. The main charge collection mechanism is drift in a shallow, high field region, which leads to a fast charge collection and a high radiation tolerance. We are currently evaluating the use of the high-voltage detectors implemented in 180nm HV-CMOS technology for the high-luminosity ATLAS upgrade. Our approach is replacing the existing pixel and strip sensors with the CMOS sensors while keeping the presently used readout ASICs. By intelligence we mean the ability of the sensor to recognize a particle hit and generate the address information. In this way we could benefit from the advantages of the HV sensor technology such as lower cost, lower mass, lower operating voltage, smaller pitch, smaller clusters at high incidence angles. Additionally we expect to achieve a radiation hardness necessary for ATLAS upgrade. In order to test the concept, we have designed two HV-CMOS prototypes that can be readout in two ways: using pixel and strip readout chips. In the case of the pixel readout, the connection between HV-CMOS sensor and the readout ASIC can be established capacitively.
In order to achieve the challenging requirements on the CLIC vertex detector, a range of technology options have been considered in recent years. One prominent idea is the use of active sensors ...implemented in a commercial high-voltage CMOS process, capacitively coupled to hybrid pixel readout chips. Recent results have shown the approach to be feasible, though more detailed studies of the performance of such devices, including simulation, are required. The CLICdp collaboration has developed a number of ASICs as part of its vertex detector R&D programme, and here we present results on the performance of a CCPDv3 active sensor glued to a CLICpix readout chip. Charge collection characteristics and tracking performance have been measured over the full expected angular range of incident particles using 120 GeV/c secondary hadron beams from the CERN SPS. Single hit efficiencies have been observed above 99% in the full range of track incidence angles, down to shallow angles. The single hit resolution has also been observed to be stable over this range, with a resolution around 6µm. The measured charge collection characteristics have been compared to simulations carried out using the Sentaurus TCAD finite-element simulation package combined with circuit simulations and parametrisations of the readout chip response. The simulations have also been successfully used to reproduce electric fields, depletion depths and the current–voltage characteristics of the device, and have been further used to make predictions about future device designs.
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