High-voltage particle detectors in commercial CMOS technologies are a detector family that allow implementation of low-cost, thin and radiation-tolerant detectors with a high time resolution. Their ...unique property is that the pixel electronic is embedded inside the sensor diodes. For this reason, we refer to this detector type as the "smart diode" array -- SDA. In the proof-of-principle phase of the development, we have demonstrated a radiation tolerance of 10 super(15) n sub(eq)/cm super(2), nearly 100% detection efficiency and a spatial resolution of about 3 mu m. Thanks to its high radiation tolerance, the SDA technology represents an interesting option for sLHC upgrades or CLIC detector readout. In order to test the concept, within ATLAS-upgrade R&D, we are currently studying an active pixel detector demonstrator HV2FEI4, implemented in AMS 180 nm high-voltage process. The contacts between the detector- and readout chip can be established either capacitively or by bump-bonding.
Abstract
A monolithic pixel sensor with small collection electrode and partially depleted sensor diode named HVMAPS25 has been implemented in the 180 nm technology of TSI semiconductors. The pixel ...size is 25 µm × 35 µm. The pixel electronics contains a fast and low power charge sensitive amplifier, a comparator, a threshold tuning DAC and a digital block that measures the arrival time of the hit with 10 bit resolution and the signal amplitude (time over threshold) with 6 bit resolution. A deep p-well has been used for isolation of the pixel electronics from the sensor substrate. The building blocks of the chip, simulations and the measurement results will be presented.
Abstract A monolithic pixel sensor test chip for the PANDA micro-vertex detector has been implemented in a 180 nm HVCMOS technology on a high resistivity substrate. The sensor should have very high ...time resolution (1 ns sigma) and high dynamic range (up to 1000). The pixel electronics contains a charge sensitive amplifier, a feedback circuit and two comparators. One comparator receives the fast signal and enables accurate time measurement. The other comparator receives the low pass filtered signal and is used for precise amplitude measurement. This publication presents several novel features of the PANDA ASIC, its characterization and several measurement results.
The Compact Linear Collider (CLIC) is an option for a future
e
+
e
-
collider operating at centre-of-mass energies up to
3
TeV
, providing sensitivity to a wide range of new physics phenomena and ...precision physics measurements at the energy frontier. This paper is the first comprehensive presentation of the Higgs physics reach of CLIC operating at three energy stages:
s
=
350
GeV
, 1.4 and
3
TeV
. The initial stage of operation allows the study of Higgs boson production in Higgsstrahlung (
e
+
e
-
→
Z
H
) and
W
W
-fusion (
e
+
e
-
→
H
ν
e
ν
¯
e
), resulting in precise measurements of the production cross sections, the Higgs total decay width
Γ
H
, and model-independent determinations of the Higgs couplings. Operation at
s
>
1
TeV
provides high-statistics samples of Higgs bosons produced through
W
W
-fusion, enabling tight constraints on the Higgs boson couplings. Studies of the rarer processes
e
+
e
-
→
t
t
¯
H
and
e
+
e
-
→
H
H
ν
e
ν
¯
e
allow measurements of the top Yukawa coupling and the Higgs boson self-coupling. This paper presents detailed studies of the precision achievable with Higgs measurements at CLIC and describes the interpretation of these measurements in a global fit.
Celotno besedilo
Dostopno za:
DOBA, IZUM, KILJ, NUK, PILJ, PNG, SAZU, SIK, UILJ, UKNU, UL, UM, UPUK
We present a High Voltage (HV) CMOS particle pixel sensor with pixel electronics based on a high dynamic range integrator. The application is beam monitoring at an ion beam therapy facility. The test ...sensor chip has been implemented in an180 nm HV-CMOS technology with a high resistivity substrate. Readout electronics are implemented on-chip and sensing elements formed by n in p substrate. Beam test and lab measurements are presented.
Particle pixel detectors in standard high-voltage CMOS technology are a new detector family that allows implementation of low-cost radiation-tolerant detectors with good time resolution. In order to ...test the concept we have implemented three detector variants. The first variant uses simple four-transistor pixel electronics that allows the rolling-shutter readout. The second variant implements complex CMOS pixel electronics with particle hit detection on pixel level and binary readout. The third variant uses the readout based on the capacitive chip-to-chip signal transmission.
In this paper we will present the recent experimental results.
Monolithic pixel detector implemented in 200 nm silicon-on-insulator technology for x-ray imaging applications will be presented. The detection is based on a fully-depleted high-resistance substrate, ...isolated by the buried silicon dioxide from the electronics layer. The pixel electronics contains a wide dynamic range integrator that is able to measure and to digitize the number of photons in a wide signal range. The detector is a simple and cheap alternative for the hybrid pixel imaging detectors. The experimental results obtained with the second prototype will be presented. The aimed application is the free electron laser.
Abstract MightyPix is a high voltage complementary metal-oxide-semiconductor (HV-CMOS) active pixel sensor, currently being developed for the Mighty Tracker, an upgrade proposed for LHCb in ...anticipation of the High Luminosity LHC. To ensure that MightyPix will be able to handle the particle hit rates at the Mighty Tracker, which are expected to reach 17 MHz/cm 2 , simulations of the chip's digital readout mechanism were performed. Using simulated particle hits the chip's performance within the LHCb environment is characterised. For this, a behavioural model of the first prototype, MightyPix1, representing the analogue pixel matrix, together with the synthesised digital logic is used. Simulation results show the MightyPix1 readout mechanism having an efficiency over 99 % up to 20 MHz/cm 2 . The bottleneck was found to be the speed at which the hits are read out. This yielded new design ideas to improve the readout for MightyPix2, leading to an efficiency of over 99 % up to 30 MHz/cm 2 .
A large monolithic particle pixel-detector implemented as system on a chip in a high-voltage
0.35
μ
m
CMOS technology will be presented. The detector uses high-voltage n-well/p-substrate diodes as ...pixel-sensors. The diodes can be reversely biased with more than 60
V. In this way, depleted zones of about
10
μ
m
thickness are formed, where the signal charges can be collected by drift. Due to fast charge collection in the strong electric-field zones, a higher radiation tolerance of the sensor is expected than in the case of the standard MAPS detectors. Simple pixel-readout electronics are implemented inside the n-wells. The readout is based on a source follower with one select- and two reset-transistors. Due to embedding of the pixel-readout electronics inside the collecting electrodes (n-wells) there are no insensitive zones within the pixel matrix. The detector chip contains a 128×128 matrix consisting of pixels of
21
×
21
μ
m
2
-size. The diode voltages of one selected pixel-row are received at the bottom of the matrix by 128 eight-bit single-slope ADCs. All ADCs operate in parallel. The ADC codes are read out using eight LVDS 500
MBit/s output links. The readout electronics are designed to allow the readout of the whole pixel matrix in less than
50
μ
s
. The total DC power consumption of the chip is 50
mW. All analog parts of the chip are implemented using radiation-hard layout techniques. Experimental results will be presented.
Golden standard of acute stroke treatment is recanalisation therapy. However, opening the occluded blood vessel sometimes does not show the expected clinical result or leads to haemorrhagic ...complications. As neuroinflammation and neurotoxicity play an important role in the pathophysiology of stroke, neuroprotective agents might preserve brain tissue after futile recanalisation.
After recanalisation therapy and not later than 24 h after symptoms onset, patients with initial NIHSS of ≥ 8 were assigned to the investigational and control group. The investigational group received intravenous Cerebrolysin as add-on therapy. The primary objective was to assess the clinical efficacy of Cerebrolysin. The secondary objective was to investigate its effect on haemorrhagic transition and to confirm its safety profile.
Baseline characteristics of patients showed no significant differences between the two groups. No difference could be detected between the two groups in the mRS scale though the Cerebrolysin group showed descriptive superiority over the control group. We found a statistically significant difference considering haemorrhagic transition and mortality rate in favour of the Cerebrolysin group.
The multimodal neurotrophic agent Cerebrolysin holds promise to impact on the late consequences of a reperfusion syndrome. Its influence on reducing neuroinflammation, promoting neuronal cell viability and neurogenesis as well as the stabilising effect on the blood-brain barrier suggests a protective effect on the neurovascular unit even when no recanalisation occurs. We confirmed the excellent safety profile of Cerebrolysin.
Cerebrolysin as add-on therapy might be beneficial and safe for patients with acute stroke in terms of lowering risk for haemorrhagic complications after recanalisation therapy.
•Recanalisation therapy is golden standard of acute stroke treatment.•Neuroprotective agents might preserve brain tissue after futile recanalization.•Cerebrolysine as a multimodal neurotrophic agent can impact the late consequences of a reperfusion injury.•Cerebrolysin may reduce the risk for haemorrhagic complications after recanalisation therapy.
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