Thin pixel development for the SuperB silicon vertex tracker Rizzo, G.; Avanzini, C.; Batignani, G. ...
Nuclear instruments & methods in physics research. Section A, Accelerators, spectrometers, detectors and associated equipment,
09/2011, Letnik:
650, Številka:
1
Journal Article
Recenzirano
The high luminosity SuperB asymmetric
e
+
e
−
collider, to be built near the INFN National Frascati Laboratory in Italy, has been designed to deliver a luminosity greater than 10
36
cm
−2
s
−1 with ...moderate beam currents and a reduced center of mass boost with respect to earlier B-Factories. An improved vertex resolution is required for precise time-dependent measurements and the SuperB Silicon Vertex Tracker will be equipped with an innermost layer of small radius (about 1.5
cm), resolution of
10
–
15
μ
m
in both coordinates, low material budget (
<
1
%
X0), and able to withstand a background rate of several tens of MHz/cm
2. The ambitious goal of designing a thin pixel device with these stringent requirements is being pursued with specific R&D programs on different technologies: hybrid pixels, CMOS MAPS and pixel sensors developed with vertical integration technology. The latest results on the various pixel options for the SuperB SVT will be presented.
Physics and high background conditions set very challenging requirements on readout speed, material budget and resolution for the innermost layer of the SuperB Silicon Vertex Tracker operated at the ...full luminosity. Monolithic Active Pixel Sensors (MAPS) are very appealing in this application since the thin sensitive region allows grinding the substrate to tens of microns. Deep N-Well MAPS, developed in the ST 130nm CMOS technology, achieved in-pixel sparsification and fast time stamping. Further improvements are being explored with an intense R&D program, including both vertical integration and 2D MAPS with the INMAPS quadruple well. We present the results of the characterization with IR laser, radioactive sources and beam of several chips produced with the 3D (Chartered/Tezzaron) process. We have also studied prototypes exploiting the features of the quadruple well and the high resistivity epitaxial layer of the INMAPS 180nm process. Promising results from an irradiation campaign with neutrons on small matrices and other test-structures, as well as the response of the sensors to high energy charged tracks are presented.
The latest advances in the design and characterization of several pixel sensors developed to satisfy the very demanding requirements of the innermost layer of the SuperB Silicon Vertex Tracker will ...be presented in this paper. The SuperB machine is an electron positron collider operating at the ϒ(4S) peak to be built in the very near future by the Cabibbo Lab consortium. A pixel detector based on extremely thin, radiation hard devices able to cope with rate in the tens of MHz/cm2 range will be the optimal solution for the upgrade of the inner layer of the SuperB tracking system. At present several options with different levels of maturity are being investigated to understand advantages and potential issues of the different technologies: thin hybrid pixels, Deep N-Well CMOS MAPS, INMAPS CMOS MAPS featuring a quadruple well and high resistivity substrates and CMOS MAPS realized with Vertical Integration technology. The newest results from beam test, the outcomes of the radiation damage studies and the laboratory characterization of the latest prototypes will be reported.
The superB silicon vertex tracker Rizzo, G.; Avanzini, C.; Batignani, G. ...
Nuclear instruments & methods in physics research. Section A, Accelerators, spectrometers, detectors and associated equipment,
05/2010, Letnik:
617, Številka:
1
Journal Article
Recenzirano
Odprti dostop
The SuperB asymmetric
e
+
–
e
-
collider has been designed to deliver a luminosity greater than
10
36
cm
-
2
s
-
1
with moderate beam currents. Comparing to current B-Factories, the reduced center of ...mass boost of the SuperB machine requires improved vertex resolution to allow precision measurements sensitive to New Physics. We present the conceptual design of the silicon vertex tracker (SVT) for the SuperB detector with the present status of the R&D on the different options under study for its innermost Layer0.
In September 2008 the SLIM5 collaboration submitted a low material budget silicon demonstrator to test with 12
GeV/
c protons, at the PS-T9 test-beam at CERN. Two different detectors were placed as ...DUTs inside a high-resolution and fast-readout beam telescope. The first DUT was a high resistivity double sided silicon detector, with short strips (“striplets”) and with reduced thickness, at
45
∘
angle to the detector's edge, readout by the data-driven FSSR2 chip. The other one was a 4k-Pixel Matrix of Deep N Well MAPS, developed in a 130
nm CMOS Technology, providing digital sparsified readout. In the following, I present the striplets and also the beam telescope characteristics, with some details about the frontend readout (based on the FSSR2 chip) and some preliminary results of the data-analysis.
While the successful launch and operation in space of the Gas Pixel Detectors onboard the PolarLight cubesat and the Imaging X-ray Polarimetry Explorer demonstrate the viability and the technical ...soundness of this class of detectors for astronomical X-ray polarimetry, it is clear that the current state of the art is not ready to meet the challenges of the next generation of experiments, such as the enhanced X-ray Timing and Polarimetry mission, designed to allow for a significantly larger data throughput.
In this paper we describe the design and test of a new custom, self-triggering readout ASIC, dubbed XPOL-III, specifically conceived to address and overcome these limitations. While building upon the overall architecture of the previous generations, the new chip improves over its predecessors in several, different key areas: the sensitivity of the trigger electronics, the flexibility in the definition of the readout window, as well as the maximum speed for the serial event readout. These design improvements, when combined, allow for almost an order of magnitude smaller dead time per event with no measurable degradation of the polarimetric, spectral, imaging or timing capability of the detector, providing a good match for the next generation of X-ray missions.
We report on further developments of our proposed design approach for a full in-pixel signal processing chain of deep N-well monolithic active pixel sensor, by exploiting the triple well option of a ...CMOS 130
nm process. Two different geometries of the collecting electrode (namely “Apsel 3
T
1
M
1” and “Apsel 3
T
1
M
2”) was implemented to compare their charge collection efficiency. The results of the characterization of the various versions of pixel matrices with a pion beam of 120
GeV/
c at the SPS H6 CERN facility will be presented. The performances of an “Apsel 3
T
1” chip irradiated with a dose up to 10
Mrad (Co
60) was also measured. Comparison will be presented among the irradiated and the new chip showing the impact of radiation damages on tracking efficiencies.
The high rate data acquisition system for the SLIM5 beam test Fabbri, L.; Bruschi, M.; Di Sipio, R. ...
Nuclear instruments & methods in physics research. Section A, Accelerators, spectrometers, detectors and associated equipment,
05/2010, Letnik:
617, Številka:
1
Journal Article
Recenzirano
In September 2008 the Slim5 collaboration submitted a low material budget silicon demonstrator to test with protons at the PS beam at CERN. The beam test setup was composed of a four double sided ...microstrip reference telescope and different detectors (DUTs) placed inside: a 4k-Pixel Matrix of Deep N Well MAPS, developed in a 130
nm CMOS Technology and a high resistivity double sided silicon detector, with short strips at
45
∘
angle to the detectors edge, read out by the FSSR2 chip. All the systems were self-triggered and read out by a fast DAQ system. In the poster the beam test setup as the data acquisition and the trigger system are explained and the data acquisition performances are shown.
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