The characterization of Si-doped GaSb epitaxial layers, grown by metal-organic vapor-phase epitaxy at a constant SiH
4
flow with a TMSb/TEGa ratio ranging from 1 to 50, is presented. X-ray ...diffraction rocking curves, photoluminescence spectra, Raman scattering spectra, resistivity, concentration of free carriers, and their mobility in GaSb:Si layers are analyzed.
GaInPAs/InP heterostructures grown by metalorganic chemical vapor-phase deposition at a temperature of 600°C and pressure of 0.1 bar are investigated. The thicknesses of the grown GaInAsP layers ...amount to about 1 μm. For Ga
1 –
x
In
x
P
1 –
y
As
y
solid solutions with average compositions of
x
= 0.77–0.87 and
y
= 0.07–0.42, the variation in the content
y
of V-group atoms over the epitaxial-layer thickness by a value of Δ
y
up to 0.1 atomic fractions in the sublattice of the V-group elements is revealed by secondary ion mass spectrometry. In most cases, a change in
y
occurs in the GaInAsP layer over a length to 200 nm from the InP heterointerface. In certain cases,
y
varies throughout the entire GaInPAs-layer thickness. For the epitaxial layers with satisfactory crystalline perfection, the value of Δ
y
is less in the case of better lattice-matching between the GaInPAs epitaxial layer and the substrate. For GaInPAs layers strongly lattice-mismatched with the substrate and characterized by a low degree of crystalline perfection, the value of Δ
y
is close to zero. All these facts enable us to assume that it is elastic deformations arising in the forming monolayer lattice-mismatched with the growing surface that affect the incorporation of V-group atoms into the forming crystalline lattice.
Results are reported of using subcontact layers with energy gap width
E
g
of 0.35 to 0.8 eV for obtaining low-resistivity electrical contacts to
p
-InP. An experimental dependence of the contact ...resistance on
E
g
of the subcontact material In
x
Ga
1 –
x
As was obtained.
This paper reports the structural and photoluminescent study results of heterostructure with short-period InAs/GaSb superlattice grown by MOCVD with 8/10 ML period thickness. The photoluminescence ...spectra was observed in the range of 3–5 μm with intensity peak at 3.8 μm. SL minibands theoretical calculation with a high accuracy confirmed the experimental data obtained. This indicates that the specified structural parameters match the chosen growth conditions.
The results of studies of nominally undoped epitaxial
p
-GaSb layers grown by metal–organic vapor-phase epitaxy at a ratio TMSb/TEGa in the range from 1 to 50 are reported. At the ratio TMSb/TEGa = ...50, GaSb epitaxial layers, whose resistivity is 400 Ω cm, are produced. It is shown that, for such layers, the crystal quality assessed by several methods remains comparable to the quality of
n
-GaSb substrates used for the growth of nominally undoped GaSb layers.
The results of investigations by the method of Electron beam-induced current of
p–n
-junctions based on InP with GaP crystallites in the space charge region are presented. It is shown that the ...introduction of crystallites into the space charge region leads to short-circuiting of the
p–n
-junction. The quality of the material grown on top of the crystallites allows to create of photoactive regions, as evidenced by measurements of the photoluminescence spectra.
Photovoltaic laser-power converters with irradiation of the substrate side are developed based on lattice-matched GaInAs/InP heterostructures formed by metal-organic vapor-phase epitaxy. Variants of ...antireflection coatings with a reflection minimum at a wavelength of λ = 1064 nm as well as features of chip bonding using soldering pastes with different melting points are considered. The efficiency of 34.5% (1.2 W, λ =1064 nm) is achieved for the converters with the area of 3.5 × 3.5 mm
2
at uniform radiation conditions.
In this work, we studied the surface quality dependence of GaSb and InP substrates prepared by various methods of pre-epitaxial preparation, specifically, etching, annealing, and growing a buffer ...layer. Our main goal was to obtain the most efficient method of pre-epitaxial treatment, which allows preparing substrates with the best surface quality. The experimental results were evaluated by the parameter of the average roughness of the substrate. As a result a combination of the methods of pre-epithelial preparation of GaSb and InP substrates was selected, which made it possible to obtain a root-mean-square surface roughness about 0.6-0.8nm.
The first results showing the possibility of manufacturing InAs/GaSb superlattices by the metal-organic chemical vapor deposition (MOCVD) method are presented. The possibility of manufacturing ...heterostructures with an InAs/GaSb strained superlattice with layer thicknesses of 2–4 nm is experimentally demonstrated. The 77-K electroluminescence spectra of the structures show a long-wavelength peak at around 5
.
0 μm (0
.
25 eV). This peak is probably associated with the strained superlattice because solid solutions that could form on the basis of composite compounds do not provide this carrier-recombination energy.
In this article, we investigated the effect of technological growth parameters by metal-organic chemical vapor deposition (MOCVD) method on the thickness of the transition layers, which affect the ...value of tensile strain in the structure, in the InAs/GaSb superlattice. We consider that the thickness of transition layers depends on the roughness of the growth surface and the technological conditions of growing single layers in the superlattice. At the first stage, we have determined the optimal annealing parameters for the minimization of the substrate roughness as T = 650 °C and t = 8 min, with a minimum value of 1.1 nm. At the second stage, studies were carried out on the effect of the sequence of elements and the delay time of reagent supply during the growth of InAs and GaSb layers on the quality of heterointerface. The stress analysis of the obtained structures was performed by reflectance anisotropy spectroscopy. It was shown that a superlattice becomes less tense with the increase in the number of pairs of alternating layers.
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