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1 2 3 4 5
zadetkov: 67
1.
  • Physical Origin of the Gate... Physical Origin of the Gate Current Surge During Short-Circuit Operation of SiC MOSFET
    Boige, F.; Tremouilles, D.; Richardeau, F. IEEE electron device letters, 05/2019, Letnik: 40, Številka: 5
    Journal Article
    Recenzirano
    Odprti dostop

    During the short circuit of a vertical 4H-SiC power MOSFET, a high gate current starts to flow through the gate dielectric. We demonstrate that the Schottky emission is the main physical mechanisms.
Celotno besedilo
Dostopno za: IJS, NUK, UL

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2.
  • Multicell converters: deriv... Multicell converters: derived topologies
    Meynard, T.A.; Foch, H.; Forest, F. ... IEEE transactions on industrial electronics (1982), 10/2002, Letnik: 49, Številka: 5
    Journal Article
    Recenzirano

    Multicell converters were introduced ten years ago and, over this period, their properties have been thoroughly analyzed. Since then, this concept has lead to some other innovative topologies which ...
Celotno besedilo
Dostopno za: IJS, NUK, UL
3.
  • Failures-tolerance and reme... Failures-tolerance and remedial strategies of a PWM multicell inverter
    Richardeau, F.; Baudesson, P.; Meynard, T.A. IEEE transactions on power electronics, 11/2002, Letnik: 17, Številka: 6
    Journal Article
    Recenzirano

    The aim of this paper is to explain the intrinsic short-circuit tolerance of an IGBT multicell inverter when a commutation failure occurs. Such a failure may either be a wrong gate voltage ...
Celotno besedilo
Dostopno za: IJS, NUK, UL
4.
  • Use of opposition method in... Use of opposition method in the test of high-power electronic converters
    Forest, F.; Huselstein, J.-J.; Faucher, S. ... IEEE transactions on industrial electronics (1982), 04/2006, Letnik: 53, Številka: 2
    Journal Article
    Recenzirano

    The test and the characterization of medium or high-power electronic converters, under nominal operating conditions, are made difficult by the requirement of high-power electrical source and load. In ...
Celotno besedilo
Dostopno za: IJS, NUK, UL
5.
  • Reliability Calculation of ... Reliability Calculation of Multilevel Converters: Theory and Applications
    Richardeau, F.; Pham, T. T. L. IEEE transactions on industrial electronics (1982), 10/2013, Letnik: 60, Številka: 10
    Journal Article
    Recenzirano

    Multilevel converters have many power devices and drivers. Thus, a direct reliability calculation based only on the first failure occurrence on one of the components clearly leads them to be devalued ...
Celotno besedilo
Dostopno za: IJS, NUK, UL
6.
  • Architecture Complexity and... Architecture Complexity and Energy Efficiency of Small Wind Turbines
    Mirecki, A.; Roboam, X.; Richardeau, F. IEEE transactions on industrial electronics (1982), 02/2007, Letnik: 54, Številka: 1
    Journal Article
    Recenzirano

    The power characteristics of wind turbines are nonlinear. It is particularly true for vertical-axis turbines whose provided power is very sensitive to the load. Thus, controlling the operating point ...
Celotno besedilo
Dostopno za: IJS, NUK, UL
7.
  • Predictive gate ageing-laws... Predictive gate ageing-laws of SiC MOSFET under repetitive short-circuit stress
    Richardeau, F.; Barazi, Y. Microelectronics and reliability, 11/2022, Letnik: 138
    Journal Article
    Recenzirano
    Odprti dostop

    This paper proposes SiC MOSFET gate ageing-laws under repetitive short-circuit stress. Based on analytical studies, physical forms and preconditioning data, numerical fitting based on stress ...
Celotno besedilo
Dostopno za: GEOZS, IJS, IMTLJ, KILJ, KISLJ, NLZOH, NUK, OILJ, PNG, SAZU, SBCE, SBJE, UILJ, UL, UM, UPCLJ, UPUK, ZAGLJ, ZRSKP
8.
  • Ageing and Failure Modes of... Ageing and Failure Modes of IGBT Modules in High-Temperature Power Cycling
    Smet, V.; Forest, F.; Huselstein, J. ... IEEE transactions on industrial electronics (1982), 10/2011, Letnik: 58, Številka: 10
    Journal Article
    Recenzirano

    This paper presents an experimental study on the ageing of insulated-gate bipolar transistor (IGBT) power modules. The aim is to identify the effects of power cycling on these devices with high ...
Celotno besedilo
Dostopno za: IJS, NUK, UL
9.
  • Fault management of multice... Fault management of multicell converters
    Turpin, C.; Baudesson, P.; Richardeau, F. ... IEEE transactions on industrial electronics (1982), 10/2002, Letnik: 49, Številka: 5
    Journal Article
    Recenzirano

    Component counts and oversimplified reliability rules may lead to the conclusion that multilevel converters are less safe than two-level converters, just because they use more components. A better ...
Celotno besedilo
Dostopno za: IJS, NUK, UL
10.
  • Gate leakage-current analys... Gate leakage-current analysis and modelling of planar and trench power SiC MOSFET devices in extreme short-circuit operation
    Boige, F.; Richardeau, F. Microelectronics and reliability, September 2017, 2017-09-00, 2017-09, Letnik: 76-77
    Journal Article
    Recenzirano
    Odprti dostop

    The purpose of this paper is to present a complete analysis of the gate leakage-current behaviour during short-circuit (SC) fault operation of 1200V SiC MOSFETs from five different manufacturers ...
Celotno besedilo
Dostopno za: GEOZS, IJS, IMTLJ, KILJ, KISLJ, NLZOH, NUK, OILJ, PNG, SAZU, SBCE, SBJE, UILJ, UL, UM, UPCLJ, UPUK, ZAGLJ, ZRSKP

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zadetkov: 67

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