We consider a nonlinear elliptic problem in divergence form, with nonstandard growth conditions, on a bounded domain. We obtain the global Calderón–Zygmund type gradient estimates for the weak ...solution of such a problem in the setting of Lebesgue and Sobolev spaces with variable
) exponents, in the case that the nonlinearity of the coefficients is allowed to be discontinuous and the domain goes beyond the Lipschitz category. We assume that the nonlinearity has small BMO semi-norms and the boundary of the domain satisfies the so-called δ-Reifenberg flatness condition. These conditions on the nonlinearity and the boundary are weaker than those reported in other studies in the literature.
•We derive the risk-adjusted valuation in a worker's decision problem.•The risk-adjusted valuation is consistently applied to any non-financial asset.•We predict capital returns under the demographic ...structure, consumption preference, and social security policy changes.
We suggest a risk-adjusted valuation approach for workers at retirement risk to make decisions in an overlapping generations economy. The risk-averse workers use greater weights than expected, so-called risk-adjusted probability, on their retirement cash flows to assess the residual lifetime income. This method can be consistently applied to value financial and non-financial assets, and on the risk-adjusted valuations, the workers will make optimal investments. To predict capital returns and economic variables, comparative statics will be numerically implemented via demographic structure, preference, and social security policy by aggregating workers’ decisions.
This study aimed to quantify both chloromethylisothiazolinone (CMIT) and methylisothiazolinone (MIT) dissolved in different product brands and to characterize the exposure to these chemicals among ...humidifier disinfectant-associated lung injury (HDLI) patients. Both CMIT and MIT dissolved in different humidifier disinfectant (HD) products were quantified using gas chromatography-mass spectrometry. The inhalation level of CMIT and MIT was estimated based on HD-associated factors as reported by HDLI patients. A total of eleven HD products marketed until the end of 2011 were found to contain CMIT and/or MIT. The level of combined CMIT and/or MIT dissolved in these HD products ranged from 12 to 353 ppm. The level varied among HD products and the year of manufacture. The average inhalation levels were estimated to be 7.5, 4.1, and 3.2 μg/m
for the definite, probable, and possible groups, respectively. If probable and possible groups were collapsed together, the inhalation level of the collapsed group was significantly different from that of the definite group (
< 0.001). All HDLI patients responded as having used HD not only while sleeping, but also as having a humidifier treated with HD within close proximity every day in insufficiently ventilated spaces. These HD use characteristics of patients may be directly/indirectly linked to the HDLI development.
We hypothesized that the association between BP and endovascular treatment (EVT) outcomes would differ by baseline perfusion and recanalization status. We identified 388 ICA or M1 occlusion patients ...who underwent EVT ≤ 24 h from onset with successful recanalization (TICI ≥ 2b). BP was measured at 5-min intervals from arrival and during the procedure. Systolic BPs (SBP) were summarized as dropmax (the maximal decrease over two consecutive measurements), incmax (the maximal increase), mean, coefficient of variation (cv), and standard deviation. Adequate baseline perfusion was defined as hypoperfusion intensity ratio (HIR) ≤ 0.5; infarct proportion as the volume ratio of final infarcts within the Tmax > 6 s region. In the adequate perfusion group, infarct proportion was closely associated with SBPdropmax (β ± SE (P-value); 1.22 ± 0.48, (< 0.01)), SBPincmax (1.12 ± 0.33, (< 0.01)), SBPcv (0.61 ± 0.15 (< 0.01)), SBPsd (0.66 ± 0.08 (< 0.01)), and SBPmean (0.71 ± 0.37 (0.053) before recanalization. The associations remained significant only in SBPdropmax, SBPincmax, and SBPmean after recanalization. SBPincmax, SBPcv and SBPsd showed significant associations with modified Rankin Scale score at 3 months in the pre-recanalization period. In the poor perfusion group, none of the SBP indices was associated with any stroke outcomes regardless of recanalization status. BP may show differential associations with stroke outcomes by the recanalization and baseline perfusion status.
Background
FLAIR (fluid attenuated inversion recovery) imaging via synthetic MRI methods leads to artifacts in the brain, which can cause diagnostic limitations. The main sources of the artifacts are ...attributed to the partial volume effect and flow, which are difficult to correct by analytical modeling. In this study, a deep learning (DL)‐based synthetic FLAIR method was developed, which does not require analytical modeling of the signal.
Purpose
To correct artifacts in synthetic FLAIR using a DL method.
Study Type
Retrospective.
Subjects
A total of 80 subjects with clinical indications (60.6 ± 16.7 years, 38 males, 42 females) were divided into three groups: a training set (56 subjects, 62.1 ± 14.8 years, 25 males, 31 females), a validation set (1 subject, 62 years, male), and the testing set (23 subjects, 57.3 ± 20.4 years, 13 males, 10 females).
Field Strength/Sequence
3 T MRI using a multiple‐dynamic multiple‐echo acquisition (MDME) sequence for synthetic MRI and a conventional FLAIR sequence.
Assessment
Normalized root mean square (NRMSE) and structural similarity (SSIM) were computed for uncorrected synthetic FLAIR and DL‐corrected FLAIR. In addition, three neuroradiologists scored the three FLAIR datasets blindly, evaluating image quality and artifacts for sulci/periventricular and intraventricular/cistern space regions.
Statistical Tests
Pairwise Student's t‐tests and a Wilcoxon test were performed.
Results
For quantitative assessment, NRMSE improved from 4.2% to 2.9% (P < 0.0001) and SSIM improved from 0.85 to 0.93 (P < 0.0001). Additionally, NRMSE values significantly improved from 1.58% to 1.26% (P < 0.001), 3.1% to 1.5% (P < 0.0001), and 2.7% to 1.4% (P < 0.0001) in white matter, gray matter, and cerebral spinal fluid (CSF) regions, respectively, when using DL‐corrected FLAIR. For qualitative assessment, DL correction achieved improved overall quality, fewer artifacts in sulci and periventricular regions, and in intraventricular and cistern space regions.
Data Conclusion
The DL approach provides a promising method to correct artifacts in synthetic FLAIR.
Level of Evidence: 4
Technical Efficacy: Stage 1
J. Magn. Reson. Imaging 2019;50:1413–1423.
We establish the natural Calderón–Zygmund theory for a nonlinear parabolic equation of p-Laplacian type in divergence form,(0.1)ut−diva(Du,x,t)=div(|F|p−2F)in ΩT, by essentially proving ...that(0.2)|F|p∈Lq(ΩT)⇒|Du|p∈Lq(ΩT), for every q∈1,∞). The equation under consideration is of general type and not necessarily of variation form, the involved nonlinearity a=a(ξ,x,t) is assumed to have a small BMO semi-norm with respect to (x,t)-variables and the lateral boundary ∂Ω of the domain is assumed to be δ-Reifenberg flat. As a consequence, we are able to not only relax the known regularity requirements on the nonlinearity for such a regularity theory, but also extend local results to a global one in a nonsmooth domain whose boundary has a fractal property. We also find an optimal regularity estimate in Orlicz–Sobolev spaces for such nonlinear parabolic problems.
In the semiconductor etch process, as the critical dimension (CD) decreases and the difficulty of the process control increases, in-situ and real-time etch profile monitoring becomes important. It ...leads to the development of virtual metrology (VM) technology, one of the measurement and inspection (MI) technology that predicts the etch profile during the process. Recently, VM to predict the etch depth using plasma information (PI) variables and the etch process data based on the statistical regression method had been developed and demonstrated high performance. In this study, VM using PI variables, named PI-VM, was extended to monitor the etch profile and investigated the role of PI variables and features of PI-VM. PI variables are obtained through analysis on optical emission spectrum data. The features in PI-VM are investigated in terms of plasma physics and etch kinetics. The PI-VM is developed to monitor the etch depth, bowing CD, etch depth times bowing CD (rectangular model), and etch area model (non-rectangular model). PI-VM for etch depth and bowing CD showed high prediction accuracy of R-square value (R2) 0.8 or higher. The rectangular and non-rectangular etch area model PI-VM showed prediction accuracy R2 of 0.78 and 0.49, respectively. The first trial of virtual metrology to monitor the etch profile will contribute to the development of the etch profile control technology.
A model predictive controller (MPC) that controls the fluorine density to a constant level in the etching process plasma was developed. In SF6/O2/Ar etch plasma, an algorithm was developed to ...maintain the F radical density at a constant level by controlling the amount of oxygen inflow. In the development of the controller, the gain of control model was designed from the particle balance equation, and the time constants were designed in consideration of the dynamic characteristics of equipment parts. The performance of the controller algorithm is evaluated through a set-point tracking test. It is expected that this will be an element technology of an automated process controller that actively controls disturbances during the etching process.
In general, the electronic and optical properties of oxide films can significantly benefit from highly textured crystallinity. However, oxide films grown by atomic layer deposition (ALD), a powerful ...technique for the synthesis of high-quality, nanoscale thin films, usually exhibit amorphous or randomly oriented polycrystalline phases. Here, we demonstrate the growth of highly textured rutile phase ALD TiO2 films through rational substrate design. Both a- and c-axis preferentially oriented TiO2 films are obtained by varying the lattice parameters of the initial ALD growth surface. Under optimized conditions, we find that it is possible to deposit high-quality, c-axis preferentially aligned TiO2 films with a bulk dielectric constant approaching 185, rivaling the single crystal limit. These films display a remarkably high dielectric constant of 117 despite thin thickness of 5.2 nm. Moreover, the addition of a single doping sequence of Al2O3 successfully suppresses leakage currents to levels compatible with modern dynamic random access memory cells, all the while maintaining the high bulk dielectric constant of 137. These results clearly highlight the prospect of utilizing crystal orientation engineering in ALD thin films for emerging semiconductor devices.
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