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zadetkov: 5
1.
  • Asteroids’ physical models ... Asteroids’ physical models from combined dense and sparse photometry and scaling of the YORP effect by the observed obliquity distribution
    Hanuš, J.; Marciniak, A.; Warner, B. D. ... Astronomy and astrophysics (Berlin), 03/2013, Letnik: 551, Številka: A67
    Journal Article
    Recenzirano
    Odprti dostop

    Context. The larger number of models of asteroid shapes and their rotational states derived by the lightcurve inversion give us better insight into both the nature of individual objects and the whole ...
Celotno besedilo
Dostopno za: FMFMET, NUK, UL, UM, UPUK

PDF
2.
  • Asteroids' physical models from combined dense and sparse photometry and scaling of the YORP effect by the observed obliquity distribution
    Ďurech, J; Brož, M; Marciniak, A ... arXiv.org, 01/2013
    Paper, Journal Article
    Odprti dostop

    The larger number of models of asteroid shapes and their rotational states derived by the lightcurve inversion give us better insight into both the nature of individual objects and the whole asteroid ...
Celotno besedilo
Dostopno za: NUK, UL, UM, UPUK
3.
Celotno besedilo

PDF
4.
  • 1.62\mu \mathrm Global Shutter Quantum Dot Image Sensor Optimized for Near and Shortwave Infrared
    Steckel, J. S.; Josse, E.; Pattantyus-Abraham, A. G. ... 2021 IEEE International Electron Devices Meeting (IEDM), 2021-Dec.-11
    Conference Proceeding

    We have developed a 1.62\mu \mathrm{m} pixel pitch global shutter sensor optimized for imaging in the near infrared (NIR) and shortwave infrared (SWIR) regions of the light spectrum. This ...
Celotno besedilo
Dostopno za: IJS, NUK, UL, UM
5.
  • An investigation of the sta... An investigation of the static and dynamic characteristics of high speed SiGe:C HBTs using a poly-SiGe emitter
    Martinet, B.; Romagna, F.; Kermarrec, O. ... Proceedings of the Bipolar/BiCMOS Circuits and Technology Meeting, 2002
    Conference Proceeding

    We describe the fabrication and characterization of high speed SiGe:C HBTs using a poly-SiGe emitter. The effects of Ge incorporation into the emitter on the static (gain, BV/sub CEO/) and dynamic ...
Celotno besedilo
Dostopno za: IJS, NUK, UL, UM

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