Organic solar cells are composed of electron donating and accepting organic semiconductors. Whilst a significant palette of donors has been developed over three decades, until recently only a small ...number of acceptors have proven capable of delivering high power conversion efficiencies. In particular the fullerenes have dominated the landscape. In this perspective, the emergence of a family of materials–the non‐fullerene acceptors (NFAs) is described. These have delivered a discontinuous advance in cell efficiencies, with the significant milestone of 20% now in sight. Intensive international efforts in synthetic chemistry have established clear design rules for molecular engineering enabling an ever‐expanding number of high efficiency candidates. However, these materials challenge the accepted wisdom of how organic solar cells work and force new thinking in areas such as morphology, charge generation and recombination. This perspective provides a historical context for the development of NFAs, and also addresses current thinking in these areas plus considers important manufacturability criteria. There is no doubt that the NFAs have propelled organic solar cell technology to the efficiencies necessary for a viable commercial technology–but how far can they be pushed, and will they also deliver on equally important metrics such as stability?
Organic photovoltaics have long promised low embodied energy, low cost solar power but have yet to make the commercial transition. Recent advances in efficiencies are potentially about to change this status‐quo, driven by a new class of semiconductors called the non‐fullerene electron acceptors. The emergence of these materials is reviewed, and perspectives provided as to future challenges and performance.
In crystalline semiconductors, absorption onset sharpness is characterized by temperature-dependent Urbach energies. These energies quantify the static, structural disorder causing localized ...exponential-tail states, and dynamic disorder from electron-phonon scattering. Applicability of this exponential-tail model to disordered solids has been long debated. Nonetheless, exponential fittings are routinely applied to sub-gap absorption analysis of organic semiconductors. Herein, we elucidate the sub-gap spectral line-shapes of organic semiconductors and their blends by temperature-dependent quantum efficiency measurements. We find that sub-gap absorption due to singlet excitons is universally dominated by thermal broadening at low photon energies and the associated Urbach energy equals the thermal energy, regardless of static disorder. This is consistent with absorptions obtained from a convolution of Gaussian density of excitonic states weighted by Boltzmann-like thermally activated optical transitions. A simple model is presented that explains absorption line-shapes of disordered systems, and we also provide a strategy to determine the excitonic disorder energy. Our findings elaborate the meaning of the Urbach energy in molecular solids and relate the photo-physics to static disorder, crucial for optimizing organic solar cells for which we present a revisited radiative open-circuit voltage limit.
The thermodynamic limit for the efficiency of solar cells is predominantly defined by the energy band gap of the used semiconductor. In the case of organic solar cells, both energetics and kinetics ...of three different species play a role: excitons, charge transfer (CT) states, and charge-separated states. In this work, we clarify the effect of the relative energetics and kinetics of these species. Making use of detailed balance, we develop an analytical framework describing how the intricate interplay between the different species influences the photocurrent generation, recombination, and open-circuit voltage in organic solar cells. We clarify the essential requirements for equilibrium among excitons, CT states, and charge carriers to occur. Furthermore, we find that the photovoltaic parameters are determined not only by the relative energetics between the different states but also by the kinetic rate constants, highlighting the importance of slow exciton recombination at low energetic offsets. Finally, depending on the kinetic parameters, we find an optimal power conversion efficiency exceeding 20% at energetic offsets around 0.1 eV. These findings provide vital insights into the operation of state-of-art non-fullerene organic solar cells with low offsets.
The measurement of the ideality factor (nid) is a popular tool to infer the dominant recombination type in perovskite solar cells (PSC). However, the true meaning of its values is often ...misinterpreted in complex multilayered devices such as PSC. In this work, the effects of bulk and interface recombination on the nid are investigated experimentally and theoretically. By coupling intensity‐dependent quasi‐Fermi level splitting measurements with drift diffusion simulations of complete devices and partial cell stacks, it is shown that interfacial recombination leads to a lower nid compared to Shockley–Read–Hall (SRH) recombination in the bulk. As such, the strongest recombination channel determines the nid of the complete cell. An analytical approach is used to rationalize that nid values between 1 and 2 can originate exclusively from a single recombination process. By expanding the study over a wide range of the interfacial energy offsets and interfacial recombination velocities, it is shown that an ideality factor of nearly 1 is usually indicative of strong first‐order non‐radiative interface recombination and that it correlates with a lower device performance. It is only when interface recombination is largely suppressed and bulk SRH recombination dominates that a small nid is again desirable.
Intensity‐dependent absolute photoluminescence studies on perovskite neat materials and partial cell stacks highlight how interface recombination can account for ideality factors between 1 and 2, commonly observed in perovskite devices. The findings are rationalized via a recombination model which details how interface recombination can lead to ideality factors of unity, in this case, not representative of a better device.
Trap-assisted recombination caused by localised sub-gap states is one of the most important first-order loss mechanism limiting the power-conversion efficiency of all solar cells. The presence and ...relevance of trap-assisted recombination in organic photovoltaic devices is still a matter of some considerable ambiguity and debate, hindering the field as it seeks to deliver ever higher efficiencies and ultimately a viable new solar photovoltaic technology. In this work, we show that trap-assisted recombination loss of photocurrent is universally present under operational conditions in a wide variety of organic solar cell materials including the new non-fullerene electron acceptor systems currently breaking all efficiency records. The trap-assisted recombination is found to be induced by states lying 0.35-0.6 eV below the transport edge, acting as deep trap states at light intensities equivalent to 1 sun. Apart from limiting the photocurrent, we show that the associated trap-assisted recombination via these comparatively deep traps is also responsible for ideality factors between 1 and 2, shedding further light on another open and important question as to the fundamental working principles of organic solar cells. Our results also provide insights for avoiding trap-induced losses in related indoor photovoltaic and photodetector applications.
Transient photovoltage (TPV) is a technique frequently used to determine charge carrier lifetimes in thin-film solar cells such as organic, dye-sensitized, and perovskite solar cells. As this ...lifetime is often incident light intensity-dependent, its relevance to understanding the intrinsic properties of a photoactive material system as a material or device figure of merit has been questioned. To extract complete information on recombination dynamics, TPV measurements are often performed in conjunction with charge extraction (CE) measurements, to determine the photogenerated charge carrier density and thereby the recombination rate constant and its order. In this communication, the underlying theory of TPV and CE is reviewed and expanded. Our theoretical findings are further solidified by numerical simulations and experiments on organic solar cells. We identify regimes of the open-circuit voltage within which accurate lifetimes and carrier densities can be determined with TPV and CE experiments. A wide range of steady-state light intensities is required in performing these experiments in order to identify their “working dynamic range” from which the recombination kinetics in thin-film solar cells can be determined.
Detailed balance is a cornerstone of our understanding of artificial light-harvesting systems. For next generation organic solar cells, this involves intermolecular charge-transfer (CT) states whose ...energies set the maximum open circuit voltage V
. We have directly observed sub-gap states significantly lower in energy than the CT states in the external quantum efficiency spectra of a significant number of organic semiconductor blends. Taking these states into account and using the principle of reciprocity between emission and absorption results in non-physical radiative limits for the V
. We propose and provide compelling evidence for these states being non-equilibrium mid-gap traps which contribute to photocurrent by a non-linear process of optical release, upconverting them to the CT state. This motivates the implementation of a two-diode model which is often used in emissive inorganic semiconductors. The model accurately describes the dark current, V
and the long-debated ideality factor in organic solar cells. Additionally, the charge-generating mid-gap traps have important consequences for our current understanding of both solar cells and photodiodes - in the latter case defining a detectivity limit several orders of magnitude lower than previously thought.
Radiative and non-radiative charge carrier recombination in thin-film diodes plays a key role in determining the efficiency of electronic devices made of next generation semiconductors such as ...organic, perovskite and nanocrystals. In this work, we show that lowering the bulk recombination does not necessarily result in enhanced performance metrics of electronic devices. From the perspective of charge carrier extraction and injection, the radiative limit of the open-circuit voltage of solar cells, noise current of photodetectors and lasing threshold of injection lasers cannot be improved if the contacts are not perfectly selective. A numerical drift-diffusion model is used to investigate the interplay between bulk recombination and surface recombination of minority carriers at the contacts in bipolar thin diode devices based on low-mobility semiconductors. The surface recombination becomes prominent in case of reduced bulk recombination strengths when non-selective contacts, i.e., contacts that are either metallic or have imperfect charge-selective interlayers, are employed. Finally, we derive analytical approximations for the case when diffusion-limited surface recombination of minority carriers at Ohmic contacts dominates the dark current. These results indicate that having perfectly selective contacts becomes crucial in systems with suppressed bulk recombination – a challenging requirement for the future state-of-the-art thin-film solar cells, light-emitting devices and photodetectors made of next generation semiconductors.
The PM6:Y6 bulk-heterojunction (BHJ) blend system achieves high short-circuit current (
J
SC
) values in thick photovoltaic junctions. Here we analyse these solar cells to understand the observed ...independence of the short-circuit current upon photoactive layer thickness. We employ a range of optoelectronic measurements and analyses, including Mott-Schottky analysis, CELIV, photoinduced absorption spectroscopy, mobility measurements and simulations, to conclude that, the invariant photocurrent for the devices with different active layer thicknesses is associated with the Y6's diffusion length exceeding 300 nm in case of a 300 nm thick cell. This is despite unintentional doping that occurs in PM6 and the associated space-charge effect, which is expected to be even more profound upon photogeneration. This extraordinarily long diffusion length - which is an order of magnitude larger than typical values for organics - dominates transport in the flat-band region of thick junctions. Our work suggests that the performance of the doped PM6:Y6 organic solar cells resembles that of inorganic devices with diffusion transport playing a pivotal role. Ultimately, this is expected to be a key requirement for the fabrication of efficient, high-photocurrent, thick organic solar cells.
Simulated energy band diagrams of thin and thick PM6:Y6 devices.
Abstract
Photodiodes are ubiquitous in industry and consumer electronics. Constantly emerging new applications for photodiodes demand different mechanical and optoelectronic properties from those ...provided by conventional inorganic-based semiconductor devices. This has stimulated considerable interest in the use of organic semiconductors, which provide a vast palette of available optoelectronic properties, can be incorporated into flexible form factor geometries, and promise low-cost, low-embodied energy manufacturing from earth-abundant materials. The sensitivity of a photodiode depends critically on the dark current. Organic photodiodes (OPDs), however, are characterized by a much higher dark current than expected for thermally excited radiative transitions. Here we show that the dark saturation current in OPDs is fundamentally limited by mid-gap trap states. This new insight is generated by the universal trend observed for the dark saturation current of a large set of OPDs and further substantiated by sensitive external-quantum-efficiency- and temperature-dependent current measurements. Based on this insight, an upper limit for the specific detectivity is established. A detailed understanding of the origins of noise in any detector is fundamental to defining performance limitations and thus is critical to materials and device selection, and design and optimization for all applications. Our work establishes these important principles for OPDs.
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