The Energy-Loss Function (ELF) of silicon is used to calculate differential and total inelastic cross-sections of incident electrons. The model is validated in the 50eV–50keV incident energy range by ...comparing the inelastic cross-sections, stopping powers, and ranges to experimental and calculated data from the literature. It is applicable down to 16.7eV. The cross sections are then used to simulate low-energy electron tracks in silicon with Geant4, using a similar implementation as the Geant4-DNA extension; this new Geant4 extension is called MuElec. Generation of low-energy electrons is clearly seen. The obtained ranges are consistent with experimental data.
The relative contribution of the radial ionization profile on SEE prediction is investigated using MUSCA-SEP 3 , in comparison with the classical approach considering the ion track as a series of ...punctual charges. The new approach is validated against experimental results, for three technology generations of PDSOI transistors and for two generations of SOI SRAM cells, showing better agreement than the punctual approach. The impact of the radial approach on the evaluation of SEU cross section as compared to the punctual approach is then investigated for nanometric SOI SRAM cells, beyond the 32-nm technological node. The influence of the radial dimension of the ion track is shown to increase with technology generation. The impact of the ion mass and energy on the ratio between radial and punctual SEU cross section is also investigated.
To assess phenomena occurring in coaxial cables under high flux of 14 MeV neutrons in D-T fusion experiments, a polyethylene, Teflontrade or vacuum sandwiched between two electrodes mock-up is ...proposed. This Mock-Up was exposed to the subnanosecond flux at the LLE OMEGA facility in Rochester (above 10 18 n/cm 2 -s) normally to the electrodes or with a tilt angle. A radiation induced current probing a radiation induced electromotive force (RIEMF) is measured and a model is proposed based on the range of the neutron-induced recoils. The GEANT4 simulation toolkit has been used to take advantage of the implementation of both nuclear and electromagnetic processes in order to compute the tracks and the strong angle dependence. Good agreements between simulations and experimental results are found for polyethylene in contrast with Teflontrade where the 3-alpha break-up of 12 C not considered in GEANT4 seems to make a major contribution to the measured induced current. Comparison with the photon flux is made.
New isomeric states in the neutron-rich nuclei near the Z=28 and N=40 shell closures have been identified among the reaction products of a 60.3A MeV 86Kr beam on a natNi target. From the measured ...isomeric decay properties information about the excited states and their nuclear structure has been obtained. The isomerism is related mostly to the occupation of the neutron g9/2 orbital, an intruder level in the N=3 fp shell. It is illustrated with the decay properties of 69Nim, 70Nim, and 71Cum interpreted within the nuclear shell model.
The single-event effects response of three different III-V field-effect transistor technologies (GaAs MESFET, InAlAs/InGaAs HEMT, and AlSb/InAs HEMT) is measured for MeV and GeV heavy-ion ...irradiation. These measurements reveal significant charge enhancement and very slow, microsecond-timescale relaxation times for the GaAs and InAlAs/InGaAs devices, with a much faster recovery from the ionizing event observed for the AlSb/InAs HEMTs.
MUST: A silicon strip detector array for radioactive beam experiments Blumenfeld, Y; Auger, F; Sauvestre, J.E ...
Nuclear instruments & methods in physics research. Section A, Accelerators, spectrometers, detectors and associated equipment,
02/1999, Letnik:
421, Številka:
3
Journal Article
Recenzirano
A new and innovative array, MUST, based on silicon strip technology and dedicated to the study of reactions induced by radioactive beams on light particles is described. The detector consists of 8 ...silicon strip – Si(Li) telescopes used to identify recoiling light charged particles through time of flight, energy loss and energy measurements and to determine precisely their scattering angle through
X,
Y
position measurements. Each 60×60
mm
2 double sided silicon strip detector with 60 vertical and 60 horizontal strips yields an
X–
Y position resolution of 1
mm, an energy resolution of 50
keV, a time resolution of around 1
ns and a 500
keV energy threshold for protons. The backing Si(Li) detectors stop protons up to 25
MeV with a resolution of approximately 50
keV. CsI crystals read out by photo-diodes which stop protons up to 70
MeV are added to the telescopes for applications where higher energy particles need to be detected. The dedicated electronics in VXIbus standard allow us to house the 968 logic and analog channels of the array in one crate placed adjacent to the reaction chamber and fully remote controlled, including pulse visualization on oscilloscopes. A stand alone data acquisition system devoted to the MUST array has been developed. Isotope identification of light charged particles over the full energy range has been achieved, and the capability of the system to measure angular distributions of states populated in inverse kinematics reactions has been demonstrated.
High energy interaction of heavy ions with silicon integrated circuits contribute to transient events or single event effects (SEE) when ionizing the device along the particle path. Knowledge of the ...electron–hole pair density in the ion track is necessary for studying collected charge and estimating device reliability for deep sub-micron transistors. We have simulated ion-tracks in silicon with a Monte-Carlo code, TRAMOS, which is reported in this paper. High velocity heavy ion interactions with silicon are described within the plane wave Born approximation. For electrons, differential cross-sections are calculated using the phase shift method for elastic collisions and the BEB model for inelastic interactions. Calculations show that for high ion velocities, a non-negligible fraction of the energy is deposited outside the sensitive volume of sub-micron transistors when compared to the case of the low ion velocities. The response of a silicon on insulator transistor to different ion tracks (size, density) is investigated with device simulations. Results show that for the 0.25
μm gate length transistor simulated, due to the technology used, the size of the ion track has minor effect on the collected charge
Q
c. For ions with same stopping power and different velocities, differences on
Q
c may show up, due to recombination mechanisms.
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