Organic–inorganic mixed halide perovskites have emerged as an excellent class of materials with a unique combination of optoelectronic properties, suitable for a plethora of applications ranging from ...solar cells to light‐emitting diodes and photoelectrochemical devices. Recent works have showcased hybrid perovskites for electronic applications through improvements in materials design, processing, and device stability. Herein, a comprehensive up‐to‐date review is presented on hybrid perovskite electronics with a focus on transistors and memories. These applications are supported by the fundamental material properties of hybrid perovskite semiconductors such as tunable bandgap, ambipolar charge transport, reasonable mobility, defect characteristics, and solution processability, which are highlighted first. Then, recent progresses on perovskite‐based transistors are reviewed, covering aspects of fabrication process, patterning techniques, contact engineering, 2D versus 3D material selection, and device performance. Furthermore, applications of perovskites in nonvolatile memories and artificial synaptic devices are presented. The ambient instability of hybrid perovskites and the strategies to tackle this bottleneck are also discussed. Finally, an outlook and opportunities to develop perovskite‐based electronics as a competitive and feasible technology are highlighted.
Organic–inorganic halide perovskites show high promise for electronic devices owing to exceptional electrical, optical, and structural properties. The latest breakthroughs in structural, interface, defect engineering, and pattering techniques as applied to halide perovskite transistors, memories and to improve stability issues in perovskites are reviewed. Lastly, the existing challenges and outline for future research directions are provided.
Organic–inorganic hybrids, which synergize the merits of organic and inorganic materials, have emerged as a new class of highly versatile functional materials with tailored properties and enhanced ...energy conversion efficiency. In this Focus Review, state-of-the-art results on organic–inorganic hybrids, used for water splitting and generation of hydrogen as a clean and renewable fuel, are concisely summarized. Two classes of hybrid materials, i.e., organic–inorganic nanocomposites and hybrid halide perovskites, are reviewed and compared for designing photoelectrochemical cells. Furthermore, promising design strategies to enhance the device performance and stability are discussed.
Perovskite oxides such as PbZrxTi1−xO3 (PZT) and BaTiO3 show excellent dielectric, piezoelectric, pyroelectric, and ferroelectric properties simultaneously and have been widely used in capacitor, ...sensor, actuator, motor, surface acoustic wave devices, and energy storage applications. Recently, a variety of solution‐processed halide perovskite materials have been discovered to exhibit fascinating properties such as high charge mobility, strong light absorption, and even ferroelectricity. In this review, the recent progress on two classes of halide perovskite ferroelectrics is summarized. The first class is organo‐lead halide perovskite semiconductor such as MAPbI3 (MA=CH3NH3+), which is intensively pursued for solar cell and light emitting diode applications. Dynamic ferroelectric polarization is believed to be one of the essential factors to protect carriers from being scattered by charged defects in these halide perovskites. The second class is normal/multilayered halide perovskite ferroelectrics with large polarization or strong piezoelectricity. The piezoelectric coefficient of these latter perovskites can be as high as ≈1540 pC N−1, comparable to those of PZT‐based ferroelectrics. Multiaxial polarizations and morphotropic phase boundaries are also demonstrated in such halide perovskites. Overall, the fast development of halide perovskite ferroelectrics opens a new avenue for not only advancing fundamental materials science but also designing novel electronic and photoelectric devices.
The recent progress on two classes of halide perovskite ferroelectrics are reviewed and compared, including organo‐lead halide perovskite semiconductors with extraordinary optoelectronic properties and halide perovskite insulators with polarization or strong piezoelectricity. The emergence of halide perovskite ferroelectrics opens a new venue for not only advancing fundamental materials science but also designing novel multi‐functional optoelectronic devices.
Hybrid halide perovskites have emerged as highly promising photovoltaic materials because of their exceptional optoelectronic properties, which are often optimized via compositional engineering like ...mixing halides. It is well established that hybrid perovskites undergo a series of structural phase transitions as temperature varies. In this work, the authors find that phase transitions are substantially suppressed in mixed‐halide hybrid perovskite single crystals of MAPbI3‐xBrx (MA = CH3NH3+ and x = 1 or 2) using a complementary suite of diffraction and spectroscopic techniques. Furthermore, as a general behavior, multiple crystallographic phases coexist in mixed‐halide perovskites over a wide temperature range, and a slightly distorted monoclinic phase, hitherto unreported for hybrid perovskites, is dominant at temperatures above 100 K. The anomalous structural evolution is correlated with the glassy behavior of organic cations and optical phonons in mixed‐halide perovskites. This work demonstrates the complex interplay between composition engineering and lattice dynamics in hybrid perovskites, shedding new light on their unique properties.
Structural phase transitions are found to be substantially suppressed in mixed‐halide hybrid perovskites of MAPbI2Br and MAPbIBr2 (MA = CH3NH3+), because of the glassy behavior of organic cations and optical phonons. A slightly distorted monoclinic phase is dominant and coexists with multiple crystallographic phases over a wide temperature range.
The electrochemical performance and stability of La0·8Sr0·2MnO3 oxygen electrodes infiltrated with La2Ni0·5Co0·5O4 (Ruddlesden-Popper) and LaNi0·5Co0·5O3 (perovskite) nano-particles were studied ...under cyclic solid oxide electrolysis cell and solid oxide fuel cell modes. Electrochemical impedance spectroscopy and analysis of distribution of relaxation times were utilized to investigate the effect of addition of catalysts with Ruddlesden-Popper and perovskite structures on the reversible operation of electrochemical cells. Results indicated that addition of La2Ni0·5Co0·5O4 nanoparticles has more impact on polarization resistance reduction as compared to LaNi0·5Co0·5O3 in cyclic operation, probably due to the facile oxygen transport in the rock salt layer of Ruddlesden-Popper structure. Analysis of the polarization resistance fluctuations shows a better stability in Ruddlesden-Popper structure-infiltrated electrodes as compared to perovskite structure. The difference between maximum and minimum of polarization resistances (i.e. fluctuations) in cyclic operation is reduced significantly by introducing Ruddlesden-Popper-structured lanthanum nickel cobaltite nanoparticles.
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•Significant improvement in the reversible operation of LNC infiltrated LSM.•Reduced polarization resistance by LNC infiltration is disclosed from DRT analysis.•Ruddlesden-Popper LNC infiltration is more effective compared to perovskite LNC.
Integrating multiple semiconductors with distinct physical properties is a practical design strategy for realizing novel optoelectronic devices with unprecedented functionalities. In this work, a ...photonic resistive switching (RS) memory is demonstrated based on solution‐processed bilayers of strontium titanate (SrTiO3 or STO) quantum dots (QDs) and all‐inorganic halide perovskite CsPbBr3 (CPB) with an Ag/STO/CPB/Au architecture. Compared with the single‐layer STO or CPB RS device, the double‐layer device shows considerably improved RS performance with a high switching ratio over 105, an endurance of 3000 cycles, and a retention time longer than 2 × 104 s. The formation of heterojunction between STO and CPB significantly enhances the high resistance state, and the separation of the active silver electrode and the CPB layer contributes to the long‐term stability. More importantly, the photonic RS device exhibits UV–visible dual‐band response due to the photogating effect and the light‐induced modification of the heterojunction barrier. Last, tri‐mode operation, i.e., photodetector, memory, and photomemory, is demonstrated via tailoring the light and electric stimuli. This bilayer device architecture provides a unique approach toward enhancing the performance of photoresponsive data‐storage devices.
A solution‐processed photonic memory is fabricated using all‐perovskite SrTiO3/CsPbBr3 bilayers as the switching media. The resistive switching performance of the device is considerably improved compared to the single‐layer counterparts, exhibiting response to dual UV–visible bands, as well as tri‐mode operation of photodetector, memory, and photomemory.
Abstract The rapid development of mixed‐halide perovskites has established a versatile optoelectronic platform owing to their extraordinary physical properties, but there remain challenges toward ...achieving highly reliable synthesis and performance, in addition, post‐synthesis approaches for tuning their photoluminescence properties after device fabrication remain limited. In this work, an effective approach is reported to leveraging hot electrons generated from plasmonic nanostructures to regulate the optical properties of perovskites. A plasmonic metasurface composed of Au nanoparticles can effectively tailor both photoluminescence and location‐specific phase segregation of mixed‐halide CsPbI 2 Br thin films. The ultrafast transient absorption spectroscopy measurements reveal hot electron injection on the timescale of hundreds of femtoseconds. Photocurrent measurements confirm the hot‐electron‐enhanced photon‐carrier conversion, and in addition, gate‐voltage tuning of phase segregation is observed because of correlated carrier injection and halide migration in the perovskite films. Finally, the characteristics of the gate‐modulated light emission are found to conform to a rectified linear unit function, serving as nonlinear electrical‐to‐optical converters in artificial neural networks. Overall, the hot electron engineering approach demonstrated in this work provides effective location‐specific control of the phase and optical properties of halide perovskites, underscoring the potential of plasmonic metasurfaces for advancing perovskite technologies.
Electronic doping is a promising approach to modulating the optoelectronic properties of semiconductors, but its effect on optoelectronic behaviors of halide perovskites remains controversial. Here, ...we comprehensively investigate the impact of Pb substitution in n-type CsPbIBr2 perovskite by utilizing monovalent Ag, divalent Zn, and trivalent Sb. Our findings reveal that the trap densities in doped CsPbIBr2 films are in the order of Ag < Zn < Sb. Compared with the pristine CsPbIBr2, the Ag-doped perovskite features a significantly reduced phase separation; however, the Sb doping accelerates halide segregation, and Zn exerts a negligible influence. The p-doping effect from monovalent Ag can shift the Fermi level of CsPbIBr2 toward the intrinsic midgap, which helps prevent the formation of ionic defects and reduce the migration of halide ions in the perovskite lattice. Through combing the density functional theory simulation, this study discloses the correlation between valence-controlled metal doping and phase segregation, providing a guideline for judiciously doping mixed-halide perovskites for optoelectronic applications.
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