Attention is given to the 1.5-1.6 micron dynamic single mode operation of GaInAsP/InP buried heterostructure, butt-jointed, built-in distributed Bragg reflector (DBR) integrated lasers. A coupling ...coefficient of more than 95 percent is estimated between the active region and the butt-jointed external waveguide region. When the lasers were operated in CW conditions at room temperature, with a threshold current of about 100 mA, single longitudinal mode operation was observed with a temperature dependence of about 0.13 nm/deg, over a temperature range of 50-65 C. The output spectrum below threshold indicated the strong wavelength selectivity of the DBR region, and the net gain difference between the main DBR mode and the adjacent submode was measured to be about 6/cm.
One-chip receiver IC fully integrating 3R functions (reshaping, retiming, regenerating) is developed for 2.4 Gb/s optical communication systems. The reshaping is performed by a transimpedance type ...preamplifier and an AGC amplifier with an offset control circuit. The retiming is accomplished by a PLL to extract clock signal from NRZ data. To reduce the crosstalk effect between the amplifiers and the PLL, the trench isolation and SOI technologies are introduced. The power consumption of the IC is 600 mW at -5.2 V supply.
Reconfigurable wavelength-division multiplexed (WDM) networks are attractive because they provide cost effective, flexible capacity growth in response to increased demands; increased network ...survivability against fiber cuts and node failures; and transparency to signal format, bit-rate, and protocol. However, optical signal degradation can occur at each node in a WDM network due to laser frequency misalignment and finite filter passbands. This paper examines the impact of external modulator chirp with frequency misalignment on 10-Gbit/s transmission through cascaded filters in WDM networks. The experimental configuration, which includes a ring of eight prototype wavelength add/drop multiplexers (WADMs) network elements is shown.
High-speed 32-channel optical wavelength selector using PLC hybrid integration Ebisawa, F.; Ogawa, I.; Akahori, Y. ...
OFC/IOOC . Technical Digest. Optical Fiber Communication Conference, 1999, and the International Conference on Integrated Optics and Optical Fiber Communication,
1999, Letnik:
3
Conference Proceeding
We have developed a new high-speed 32-channel optical wavelength selector (OWS) with gate drivers using PLC hybrid integration. It has excellent characteristics consisting of a low insertion loss of ...2.3 dB, a low cross talk of -46 dB and the error-free optical wavelength selection of 10-Gbit/s optical signal.
Lasing characteristics of GaInAsP/InP buried heterostructure butt-jointed built-in distributed Bragg reflector integrated lasers (BH-BJB-DBR lasers) intended for dynamic single mode operation in the ...wavelength range of 1.5-1.6 mu m are given. In the first section, the coupling property between the active region and the butt-jointed external waveguide region is calculated to show the possibility of large fabrication tolerance. A coupling coefficient of more than 95 percent is estimated. Secondly, the GaInAsP/InP integrated lasers were fabricated and tested in the view of the static characteristics and the axial mode selection property. Lateral mode control was achieved by the use of a buried heterostructure, so that the axial and lateral modes were maintained to a fixed single mode.
This paper reports the 2.4 Gb/s optical terminal IC integrating high-speed analog and digital circuits for future optical networks. The IC consists of a receiver (a preamplifier, an automatic gain ...control (AGC) amplifier, a phase-locked-loop (PLL), a D-F/F), and a 1:16 demultiplexer (DMUX). An input offset control circuit is included in the AGC amplifier for wide dynamic range. The trench isolation and SOI technologies are introduced to reduce the crosstalk effect between the amplifiers and the PLL.
SiGe bipolar ICs, a selector, a multiplier and a D-type flip-flop, have been developed for a 20 Gb/s optical transmitter by using a self-aligned SiGe base bipolar transistor with bonded SOI ...technology. In the selector IC and the multiplier IC, an internal high speed clock buffer circuit accomplishes stable operation under a single clock input condition.
Si-analog ICs for 20 Gb/s optical receiver Soda, M.; Tezuka, H.; Sato, F. ...
Proceedings of IEEE International Solid-State Circuits Conference - ISSCC '94,
1994
Conference Proceeding
This paper describes two kinds of Si-analog ICs, a preamplifier IC and a decision IC consisting of a gain-controllable amplifier and a D-type flip flop (D-F/F) for a 20 Gb/s optical receiver. A 20 ...Gb/s optical receiver for the generation beyond 10 Gb/s has been fabricated in hybrid circuit technology. However, the development of high-speed analog ICs operating at 20 Gb/s, making possible reduced system size, is indispensable for stable system operation in practical application.< >
