Pulsed-power switching by power semiconductor devices Jiang, W.; Oshima, N.; Yokoo, T. ...
The 33rd IEEE International Conference on Plasma Science, 2006. ICOPS 2006. IEEE Conference Record - Abstracts,
2006
Conference Proceeding
Summary form only given. Repetitive pulsed high-voltage modulators have been developed for industrial applications. They have used the most up-to-date power semiconductor devices such as power ...MOSFETs, silicon carbide JFETs, static-induction thyristors (SIThy), and semiconductor opening switches (SOS). As a new kind of high-energy particle accelerator, induction synchrotron requires pulsed high-voltage modulators with repetition rate on the order of 1 MHz. A test unit of stacked MOSFET has been successfully developed and tested for continuous operation. In the same time, SIThy and SiC-FET are also investigated for their performance as potential substitutes to MOSFET. A pulsed high-voltage generator using SOS has been developed for applications in sterilization. It consists of a primary unit which is switched by an IGBT and a secondary unit where two magnetic switches and an SOS are used. A pulse transformer is used to multiply the voltage between the two units. The output voltage pulses are of 60 kV in peak value and 50 ns in pulse width, with continuous repetition rate of 1 kHz
SI-thyristor is expected as a solid-state high power switching semi-conducting device for the kicker magnet in the circular accelerator. Current rise has reached to 100 kA//spl mu/s. We noticed this ...characteristic and tried the use it for the pulse forming line (PFL). Preliminary results of the proto-type power supply of 20 kV-120 ns, with various impedance, although the intention is 75 kV-100 ns, are presented.
Summary form only given, as follows. Summary form only given as follows. Compact pulsed power generators using high-power semiconductor switches are being developed at Nagaoka University of ...Technology, in collaboration with partners from Japanese industry. The switching units involved in these studies are the most up-to-date semiconductor switches such as static-induction thyristor (SI-thyristor), insulated gate bipolar transistor (IGBT), high-power metal-oxide-semiconductor field effect transistor (MOSFET), and semiconductor opening switch (SOS). The expected application areas are pulsed gas laser, flue-gas treatment, high-energy accelerator, and biomedical development. A very compact pulsed power generator using a single SI-thyristor as the main switch is developed for output parameters of 15 W, 20 A, 100 ns, and 2 kHz. It is driven by a 12 V DC power supply. It is designed for applications on automobile such as exhaust gas treatment. A stacked MOSFET switch has been developed and tested. Commercially available MOSFET units (1 kV, 10 A) were used to form the stack of 8 in series and 6 in parallel. Each unit is triggered by an optically coupled signal so that all units are controlled simultaneously by a common trigger circuit. Experimental results have shown that such a stacked MOSFET switch is capable of working under the voltage of 5 kV, turning on and off the load current of 100 A in /spl sim/30 ns, at the maximum repetition rate of 2 MHz. It is designed for applications to high-energy accelerators IGBTs and SOSs are used for different types of excimer laser drivers. The IGBT switch is combined with magnetic switches to generate pulsed output voltage of 28 kV at the repetition rate of 6 kHz. The generator using SOS as the main switch is more compact and has a potential for higher repetition rate.
In this study, we investigated a water treatment method that sprays waste water droplets into pulse discharge space. It is important for this method to apply pulsed voltage of a short pulse width and ...a fast rise time to the electrode to realize high energy efficiency. Inductive energy storage (IES) circuit using a semi-conductor opening switch (SOS) realizes pulsed voltage like that. The water treatment using that circuit was carried out. Initially, the maximum of current of the SOS was varied without changing the pulse width by varying capacitance and inductance. As the result, the energy at the discharge load increased for larger current of the SOS. Pulse width of the voltage and the energy transfer efficiency were not influenced by difference of current of the SOS. Then, the pulse transformer (PT) turn ratio and the capacitance were changed. The energy at the discharge load was higher at the turn ratio of 2:22, and the energy transfer efficiency was improved from 6.8% to 19.2%. The indigo carmine decomposed at quicker rate under the larger discharge condition.
Water treatment using pulsed streamer discharge in water has been studied currently. We have attempted to develop high efficiency water treatment system for a practical application. The system is ...composed of a reactor module and a pulsed power generator. Initially, an investigation of the pulsed power generator is described. An inductive energy storage circuit and a capacitive energy storage circuit, with semiconductor switches and magnetic switches were compared. The IES circuit could output higher voltage than that of the CES circuit, but the energy efficiency was lower than that of the CES circuit. However, the IES circuit realized the higher voltage output and the high energy transfer efficiency by the adjustment of the load impedance. Then, an investigation of structure of the reactor module is described. Three water treatment methods, i.e., discharge on water surface, discharge in bubbles in water, and water droplets spray into discharge space in gas, were compared. For the water droplets spray type, the energy efficiency for the decomposition of acetic acid was not the highest although that for dye is the highest. To increase the energy efficiency for the acetic acid, the discharge energy density should be low and a kind of gas in which the discharge is generated should be investigated.
A new pulse compression system is fabricated for grading up the induction accelerator LAX-1, which is currently used for Raman FEL research at JAERI. It is designed so that the capacitance of PFL can ...be varied partly, and the output voltage ramp be controlled within /spl plusmn/20%. The system consists of a series of PFLs and magnetic switches for pulse compression from 2 /spl mu/s and 30 kV to 130 ns and 250 kV. The final output is supplied with to 2/spl times/4 units of accelerating cavity. The design, circuit parameters, mechanism of varying the PFL parameters and the results compared with those of the numerical simulation are presented. Relation to the beam dynamics and FEL performance is also considered.< >
Repetitive pulsed power generation by compact sources is being studied for industrial applications. The research efforts include pulse-compression concept exploration, electrical circuit design and ...optimization, switching device development and evaluation, and application demonstrations. The basic strategy is to take advantage of solid-state switching devices to achieve compactness, reliability, and high repetition rate of pulsed power systems operating in both capacitive and inductive energy-storage schemes. These solid-state switches include saturable inductors, saturable capacitors, photoconductive semiconductors, and other power semiconductor switching devices, such as MOSFET, IGBT, SiC-FET, and SI-Thyristor.
Power semiconductor devices have been used in development of various pulsed power generators for industrial applications. A repetitive pulsed high-voltage modulator using power MOSFETs has been ...developed for accelerator applications. It is capable of high-speed switching of 2kV at repetition rate of 1 MHz. This modulator, operating in continuous mode at average power level of 30 kW, has played an important role in the experimental demonstration of Induction Synchrotron. In the same time, SIThy is also tested for the same application since it has higher power capability than MOSFET. Initial experiments have demonstrated 1-MHz operation of SIThy at 2kV in burst mode. A pulsed high-voltage generator using SIThy has been developed for applications in flue-gas treatment. This generator uses a newly developed inductive-energy-storage circuit to achieve both output-voltage multiplication and pulse-width compression. It is very compact and it needs a 12-V (DC) battery as the only power supply to give output of 12 kV with pulse width of 100 ns at repetition rate of 2 kHz in continuous mode. A pulsed high-current modulator has been developed for extreme-ultraviolet generation. It uses IGBTs as the main switch and employs magnetic-pulse-compression to achieve pulsed high current. The output reaches 40 kA with pulse width of 240 ns while operating at repetition rate of 1 kHz in burst mode. This modulator is used in light source development for next-generation lithography. Semiconductor opening switches (SOS) are used in pulsed power generators for excimer laser pumping and flue-gas treatment. These developments are mostly international collaboration with Russian scientists, while efforts are being made to develop SOS devices in Japan.
MHz pulsed power generator using MOSFET Jiang, W.; Matsuda, T.; Yatsui, K. ...
Conference Record of the Twenty-Fifth International Power Modulator Symposium, 2002 and 2002 High-Voltage Workshop,
2002
Conference Proceeding
A stacked MOSFET switch has been developed and tested. Commercially available MOSFETs (900 V, 8 A) are used to form the stack of 8 in series and 6 in parallel. Each FET is triggered by an optically ...coupled signal so that all units are controlled simultaneously by a common trigger circuit. Experimental results have shown that such this stacked MOSFET switch is capable of working under the voltage of 5 kV, turning on and off of 75 A in /spl sim/ 30 ns, at the maximum repetition rate of 2 MHz.
