The number of published materials science articles has increased manyfold over the past few decades. Now, a major bottleneck in the materials discovery pipeline arises in connecting new results with ...the previously established literature. A potential solution to this problem is to map the unstructured raw text of published articles onto structured database entries that allow for programmatic querying. To this end, we apply text mining with named entity recognition (NER) for large-scale information extraction from the published materials science literature. The NER model is trained to extract summary-level information from materials science documents, including inorganic material mentions, sample descriptors, phase labels, material properties and applications, as well as any synthesis and characterization methods used. Our classifier achieves an accuracy (f 1) of 87%, and is applied to information extraction from 3.27 million materials science abstracts. We extract more than 80 million materials-science-related named entities, and the content of each abstract is represented as a database entry in a structured format. We demonstrate that simple database queries can be used to answer complex “meta-questions” of the published literature that would have previously required laborious, manual literature searches to answer. All of our data and functionality has been made freely available on our Github (https://github.com/materialsintelligence/matscholar) and website (http://matscholar.com), and we expect these results to accelerate the pace of future materials science discovery.
Materials that crystallize in diamond-related lattices, with Si and GaAs as their prime examples, are at the foundation of modern electronics. Simultaneously, inversion asymmetries in their crystal ...structure and relativistic spinorbit coupling led to discoveries of non-equilibrium spin-polarization phenomena that are now extensively explored as an electrical means for manipulating magnetic moments in a variety of spintronic structures. Current research of these relativistic spinorbit torques focuses primarily on magnetic transition-metal multilayers. The low-temperature diluted magnetic semiconductor (Ga,Mn)As, in which spinorbit torques were initially discovered, has so far remained the only example showing the phenomenon among bulk non-centrosymmetric ferromagnets. Here we present a general framework, based on the complete set of crystallographic point groups, for identifying the potential presence and symmetry of spinorbit torques in non-centrosymmetric crystals. Among the candidate room-temperature ferromagnets we chose to use NiMnSb, which is a member of the broad family of magnetic Heusler compounds. By performing all-electrical ferromagnetic resonance measurements in single-crystal epilayers of NiMnSb we detect room-temperature spinorbit torques generated by eective elds of the expected symmetry and of a magnitude consistent with our ab initio calculations.
A spin-torque ferromagnetic resonance study is performed in epitaxial \(\mathrm{Fe / Ir_{15}Mn_{85}}\) bilayers with different Fe thicknesses. We measure a negative spin-Hall angle of a few percent ...in the antiferromagnetic IrMn in contrast to previously reported positive values. A large spin-orbit field with Rashba symmetry opposing the Oersted field is also present. Magnitudes of measured spin-orbit torques depend on the crystallographic direction of current and are correlated with the exchange bias direction set during growth. We suggest that the uncompensated moments at the Fe / IrMn interface are responsible for the observed anisotropy. Our findings highlight the importance of crystalline and magnetic structures for the spin-Hall effect in antiferromagnets.
We investigate magnetization dynamics in a spin-Hall oscillator using a direct current measurement as well as conventional microwave spectrum analysis. When the current applies an anti-damping ...spin-transfer torque, we observe a change in resistance which we ascribe to the excitation of incoherent exchange magnons. A simple model is developed based on the reduction of the effective saturation magnetization, quantitatively explaining the data. The observed phenomena highlight the importance of exchange magnons on the operation of spin-Hall oscillators.
Materials that crystalize in diamond-related lattices, with Si and GaAs as their prime examples, are at the foundation of modern electronics. Simultaneoulsy, the two atomic sites in the unit cell of ...these crystals form inversion partners which gives rise to relativistic non-equilibrium spin phenomena highly relevant for magnetic memories and other spintronic devices. When the inversion-partner sites are occupied by the same atomic species, electrical current can generate local spin polarization with the same magnitude and opposite sign on the two inversion-partner sites. In CuMnAs, which shares this specific crystal symmetry of the Si lattice, the effect led to the demonstration of electrical switching in an antiferromagnetic memory at room temperature. When the inversion-partner sites are occupied by different atoms, a non-zero global spin-polarization is generated by the applied current which can switch a ferromagnet, as reported at low temperatures in the diluted magnetic semiconductor (Ga,Mn)As. Here we demonstrate the effect of the global current-induced spin polarization in a counterpart crystal-symmetry material NiMnSb which is a member of the broad family of magnetic Heusler compounds. It is an ordered high-temperature ferromagnetic metal whose other favorable characteristics include high spin-polarization and low damping of magnetization dynamics. Our experiments are performed on strained single-crystal epilayers of NiMnSb grown on InGaAs. By performing all-electrical ferromagnetic resonance measurements in microbars patterned along different crystal axes we detect room-temperature spin-orbit torques generated by effective fields of the Dresselhaus symmetry. The measured magnitude and symmetry of the current-induced torques are consistent with our relativistic density-functional theory calculations.
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