Isostructural metal-insulator transition in VO2 Lee, D; Chung, B; Shi, Y ...
Science (American Association for the Advancement of Science),
11/2018, Letnik:
362, Številka:
6418
Journal Article
Recenzirano
Odprti dostop
Separating structure and electrons in VO2Above 341 kelvin—not far from room temperature—bulk vanadium dioxide (VO2) is a metal. But as soon as the material is cooled below 341 kelvin, VO2 turns into ...an insulator and, at the same time, changes its crystal structure from rutile to monoclinic. Lee et al. studied the peculiar behavior of a heterostructure consisting of a layer of VO2 placed underneath a layer of the same material that has a bit less oxygen. In the VO2 layer, the structural transition occurred at a higher temperature than the metal-insulator transition. In between those two temperatures, VO2 was a metal with a monoclinic structure—a combination that does not occur in the absence of the adjoining oxygen-poor layer.Science, this issue p. 1037The metal-insulator transition in correlated materials is usually coupled to a symmetry-lowering structural phase transition. This coupling not only complicates the understanding of the basic mechanism of this phenomenon but also limits the speed and endurance of prospective electronic devices. We demonstrate an isostructural, purely electronically driven metal-insulator transition in epitaxial heterostructures of an archetypal correlated material, vanadium dioxide. A combination of thin-film synthesis, structural and electrical characterizations, and theoretical modeling reveals that an interface interaction suppresses the electronic correlations without changing the crystal structure in this otherwise correlated insulator. This interaction stabilizes a nonequilibrium metallic phase and leads to an isostructural metal-insulator transition. This discovery will provide insights into phase transitions of correlated materials and may aid the design of device functionalities.
Using a set of scanning probe microscopy techniques, we demonstrate the reproducible tunneling electroresistance effect on nanometer-thick epitaxial BaTiO3 single-crystalline thin films on SrRuO3 ...bottom electrodes. Correlation between ferroelectric and electronic transport properties is established by direct nanoscale visualization and control of polarization and tunneling current. The obtained results show a change in resistance by about 2 orders of magnitude upon polarization reversal on a lateral scale of 20 nm at room temperature. These results are promising for employing ferroelectric tunnel junctions in nonvolatile memory and logic devices.
The formation of two-dimensional electron gases (2DEGs) at complex oxide interfaces is directly influenced by the oxide electronic properties. We investigated how local electron correlations control ...the 2DEG by inserting a single atomic layer of a rare-earth oxide (RO) (R is lanthanum (La), praseodymium (Pr), neodymium (Nd), samarium (Sm), or yttrium (Y) into an epitaxial strontium titanate oxide (SrTiO₃) matrix using pulsed-laser deposition with atomic layer control. We find that structures with La, Pr, and Nd ions result in conducting 2DEGs at the inserted layer, whereas the structures with Sm or Y ions are insulating. Our local spectroscopic and theoretical results indicate that the interfacial conductivity is dependent on electronic correlations that decay spatially into the SrTiO₃ matrix. Such correlation effects can lead to new functionalities in designed heterostructures.
The interconversion of charge and spin currents via spin-Hall effect is essential for spintronics. Energy-efficient and deterministic switching of magnetization can be achieved when spin ...polarizations of these spin currents are collinear with the magnetization. However, symmetry conditions generally restrict spin polarizations to be orthogonal to both the charge and spin flows. Spin polarizations can deviate from such direction in nonmagnetic materials only when the crystalline symmetry is reduced. Here, we show control of the spin polarization direction by using a non-collinear antiferromagnet Mn
GaN, in which the triangular spin structure creates a low magnetic symmetry while maintaining a high crystalline symmetry. We demonstrate that epitaxial Mn
GaN/permalloy heterostructures can generate unconventional spin-orbit torques at room temperature corresponding to out-of-plane and Dresselhaus-like spin polarizations which are forbidden in any sample with two-fold rotational symmetry. Our results demonstrate an approach based on spin-structure design for controlling spin-orbit torque, enabling high-efficient antiferromagnetic spintronics.
The enhancement of the functional properties of materials at reduced dimensions is crucial for continuous advancements in nanoelectronic applications. Here, we report that the scale reduction leads ...to the emergence of an important functional property, ferroelectricity, challenging the long-standing notion that ferroelectricity is inevitably suppressed at the scale of a few nanometers. A combination of theoretical calculations, electrical measurements, and structural analyses provides evidence of room-temperature ferroelectricity in strain-free epitaxial nanometer-thick films of otherwise nonferroelectric strontium titanate (SrTiO3). We show that electrically induced alignment of naturally existing polar nanoregions is responsible for the appearance of a stable net ferroelectric polarization in these films. This finding can be useful for the development of low-dimensional material systems with enhanced functional properties relevant to emerging nanoelectronic devices.
Non-volatile memories, as opposedto volatile ones, allow data to be retained even when not powered. This prominent advantage has made non-volatile memory technologies one of the fastest growing ...markets with applications ranging from smart phones to industrial robots.
The discovery of a two-dimensional electron gas (2DEG) at the LaAlO
/SrTiO
interface
has resulted in the observation of many properties
not present in conventional semiconductor heterostructures, and ...so become a focal point for device applications
. Its counterpart, the two-dimensional hole gas (2DHG), is expected to complement the 2DEG. However, although the 2DEG has been widely observed
, the 2DHG has proved elusive. Herein we demonstrate a highly mobile 2DHG in epitaxially grown SrTiO
/LaAlO
/SrTiO
heterostructures. Using electrical transport measurements and in-line electron holography, we provide direct evidence of a 2DHG that coexists with a 2DEG at complementary heterointerfaces in the same structure. First-principles calculations, coherent Bragg rod analysis and depth-resolved cathodoluminescence spectroscopy consistently support our finding that to eliminate ionic point defects is key to realizing a 2DHG. The coexistence of a 2DEG and a 2DHG in a single oxide heterostructure provides a platform for the exciting physics of confined electron-hole systems and for developing applications.
Ferroelectric Tunnel Memristor Kim, D. J; Lu, H; Ryu, S ...
Nano letters,
11/2012, Letnik:
12, Številka:
11
Journal Article
Recenzirano
Strong interest in resistive switching phenomena is driven by a possibility to develop electronic devices with novel functional properties not available in conventional systems. Bistable resistive ...devices are characterized by two resistance states that can be switched by an external voltage. Recently, memristorselectric circuit elements with continuously tunable resistive behaviorhave emerged as a new paradigm for nonvolatile memories and adaptive electronic circuit elements. Employment of memristors can radically enhance the computational power and energy efficiency of electronic systems. Most of the existing memristor prototypes involve transition metal oxide resistive layers where conductive filaments formation and/or the interface contact resistance control the memristive behavior. In this paper, we demonstrate a new type of memristor that is based on a ferroelectric tunnel junction, where the tunneling conductance can be tuned in an analogous manner by several orders of magnitude by both the amplitude and the duration of the applied voltage. The ferroelectric tunnel memristors exhibit a reversible hysteretic nonvolatile resistive switching with a resistance ratio of up to 105 % at room temperature. The observed memristive behavior is attributed to the field-induced charge redistribution at the ferroelectric/electrode interface, resulting in the modulation of the interface barrier height.
Multi-ferroic and magnetoelectric materials and interfaces Velev, J. P.; Jaswal, S. S.; Tsymbal, E. Y.
Philosophical transactions of the Royal Society of London. Series A: Mathematical, physical, and engineering sciences,
08/2011, Letnik:
369, Številka:
1948
Journal Article
Recenzirano
The existence of multiple ferroic orders in the same material and the coupling between them have been known for decades. However, these phenomena have mostly remained the theoretical domain owing to ...the fact that in single-phase materials such couplings are rare and weak. This situation has changed dramatically recently for at least two reasons: first, advances in materials fabrication have made it possible to manufacture these materials in structures of lower dimensionality, such as thin films or wires, or in compound structures such as laminates and epitaxial-layered heterostructures. In these designed materials, new degrees of freedom are accessible in which the coupling between ferroic orders can be greatly enhanced. Second, the miniaturization trend in conventional electronics is approaching the limits beyond which the reduction of the electronic element is becoming more and more difficult. One way to continue the current trends in computer power and storage increase, without further size reduction, is to use multi-functional materials that would enable new device capabilities. Here, we review the field of multi-ferroic (MF) and magnetoelectric (ME) materials, putting the emphasis on electronic effects at ME interfaces and MF tunnel junctions.
The phenomenon of electron tunneling has been known since the advent of quantum mechanics, but continues to enrich our understanding of many fields of physics, as well as creating sub-fields on its ...own. Spin-dependent tunneling in magnetic tunnel junctions has aroused considerable interest and development. In parallel with this endeavor, recent advances in thin-film ferroelectrics have demonstrated the possibility of achieving stable and switchable ferroelectric polarization in nanometer-thick films. This discovery opened the possibility of using thin-film ferroelectrics as barriers in magnetic tunnel junctions, thus merging the fields of magnetism, ferroelectricity, and spin-polarized transport into an exciting and promising area of novel research. Nowadays, this research has become an important constituent of a broader effort in multiferroic materials and heterostructures that involves rich fundamental science and offers a potential for applications in novel multifunctional devices. The purpose of this article is to review recent developments in ferroelectric and multiferroic tunnel junctions. Starting from the concept of electron tunneling, we first discuss the key properties of magnetic tunnel junctions and then assess key functional characteristics of ferroelectric and multiferroic tunnel junctions. We discuss the recent demonstrations of giant resistive switching observed in ferroelectric tunnel junctions and the new concept of electrically controlling the spin polarization in magnetic tunnel junctions with a ferroelectric tunnel barrier.
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