Bi2Te3‐based materials are not only the most important and widely used room temperature thermoelectric (TE) materials but are also canonical examples of topological insulators in which the ...topological surface states are protected by the time‐reversal symmetry. High‐performance thin films based on Bi2Te3 have attracted worldwide attention during the past two decades due primarily to their outstanding TE performance as highly efficient TE coolers and as miniature and flexible TE power generators for a variety of electronic devices. Moreover, intriguing topological phenomena, such as the quantum anomalous Hall effect and topological superconductivity discovered in Bi2Te3‐based thin films and heterostructures, have shaped research directions in the field of condensed matter physics. In Bi2Te3‐based films and heterostructures, delicate control of the carrier transport, film composition, and microstructure are prerequisites for successful device operations as well as for experimental verification of exotic topological phenomena. This review summarizes the recent progress made in atomic defect engineering, carrier tuning, and band engineering down to a nanoscale regime and how it relates to the growth and fabrication of high‐quality Bi2Te3‐based films. The review also briefly discusses the physical insight into the exciting field of topological phenomena that were so dramatically realized in Bi2Te3‐ and Bi2Se3‐based structures. It is expected that Bi2Te3‐based thin films and heterostructures will play an ever more prominent role as flexible TE devices collecting and converting low‐level (body) heat into electricity for numerous electronic applications. It is also likely that such films will continue to be a remarkable platform for the realization of novel topological phenomena.
Bi2Te3‐based materials are one type of the most popular thermoelectric materials and topological insulators, whereby their thin films are particularly suitable for important applications in the efficient active cooling and self‐powered power supply for miniaturized/flexible electronic devices as well as in the low power electronics and quantum computation. Tremendous efforts regarding the delicate control of the atomic point defects, chemical composition, preferential orientation, magnetic doping, and also spin‐orbit coupling have been exerted for the optimization of electronic band structure, topological surface states, electrical and thermal transport, and topological electronic transport of Bi2Te3‐based thin films, and hence for the proof‐of‐principle demonstration and practical applications of Bi2Te3‐based thin film devices. It is widely accepted that Bi2Te3‐based thin films will be of great significance for thin‐film thermoelectric applications and for discovering novel topological phenomena and relevant applications in the near future.
Excellent thermoelectric performance is obtained over a broad temperature range from 300 K to 800 K by doping single crystals of SnSe. The average value of the figure of merit ZT, of more than 1.17, ...is measured from 300 K to 800 K along the crystallographic b-axis of 3 at% Na-doped SnSe, with the maximum ZTreaching a value of 2 at 800 K. The room temperature value of the power factor for the same sample and in the same direction is 2.8 mW mK super(-2), which is an order of magnitude higher than that of the undoped crystal. Calculations show that Na doping lowers the Fermi level and increases the number of carrier pockets in SnSe, leading to a collaborative optimization of the Seebeck coefficient and the electrical conductivity. The resultant optimized carrier concentration and the increased number of carrier pockets near the Fermi level in Na-doped samples are believed to be the key factors behind the spectacular enhancement of the average ZT.
In recent decades, by continuously enhancing the figure of merit ZT of various thermoelectric (TE) materials, solid state TE technology has matured and is on the verge of making an impact in real ...industrial settings as a promising approach to harvest waste industrial heat and convert it to useful electricity. Nevertheless, actual TE module development has remained stagnant with rather poor efficiencies. This has raised an urgent need to design rational module structures that rely on complex parameter optimization and utilization of efficient integration technologies that minimize energy losses during bonding of various interfaces. Here, we demonstrate a three-dimensional numerical analysis model of a segmented TE power-generating device, which takes into account the temperature-dependent materials' properties and various parasitic losses. The model generates an optimized design with predictive performance to realize maximum conversion efficiency. Combined with the developed bonding schemes and assembly techniques, the segmented modules consisting of Bi2Te3-based alloys and CoSb3-based filled skutterudites were successfully fabricated with a record-high efficiency of up to 12% when operating under a temperature difference of 541 degree C. The rational structure design based on the numerical analysis model and the extremely low thermal and electrical losses enable the heat-to-electricity conversion efficiency to reach up to 96.9% of the theoretical efficiency based on the TE materials themselves. These findings highlight the importance of the optimization strategy for TE power generation devices based on the TE materials' intrinsic properties and demonstrate that realistic high temperature TE modules with predictive high efficiency and high power density can be fabricated, which provides a useful guide to achieve a high conversion efficiency in large-scale TE applications.
Thermoelectric technology, harvesting electric power directly from heat, is a promising environmentally friendly means of energy savings and power generation. The thermoelectric efficiency is ...determined by the device dimensionless figure of merit ZTdev, and optimizing this efficiency requires maximizing ZT values over a broad temperature range. Here, we report a record high ZTdev ~1.34, with ZT ranging from 0.7 to 2.0 at 300 to 773 kelvin, realized in hole-doped tin selenide (SnSe) crystals. The exceptional performance arises from the ultrahigh power factor, which comes from a high electrical conductivity and a strongly enhanced Seebeck coefficient enabled by the contribution of multiple electronic valence bands present in SnSe. SnSe is a robust thermoelectric candidate for energy conversion applications in the low and moderate temperature range.
The thermoelectric effect enables direct and reversible conversion between thermal and electrical energy, and provides a viable route for power generation from waste heat. The efficiency of ...thermoelectric materials is dictated by the dimensionless figure of merit, ZT (where Z is the figure of merit and T is absolute temperature), which governs the Carnot efficiency for heat conversion. Enhancements above the generally high threshold value of 2.5 have important implications for commercial deployment, especially for compounds free of Pb and Te. Here we report an unprecedented ZT of 2.6 ± 0.3 at 923 K, realized in SnSe single crystals measured along the b axis of the room-temperature orthorhombic unit cell. This material also shows a high ZT of 2.3 ± 0.3 along the c axis but a significantly reduced ZT of 0.8 ± 0.2 along the a axis. We attribute the remarkably high ZT along the b axis to the intrinsically ultralow lattice thermal conductivity in SnSe. The layered structure of SnSe derives from a distorted rock-salt structure, and features anomalously high Grüneisen parameters, which reflect the anharmonic and anisotropic bonding. We attribute the exceptionally low lattice thermal conductivity (0.23 ± 0.03 W m(-1) K(-1) at 973 K) in SnSe to the anharmonicity. These findings highlight alternative strategies to nanostructuring for achieving high thermoelectric performance.
Celotno besedilo
Dostopno za:
DOBA, IJS, IZUM, KILJ, KISLJ, NUK, PILJ, PNG, SAZU, SIK, UILJ, UKNU, UL, UM, UPUK
6.
Thermoelectric properties of Ag-doped Cu2Se and Cu2Te Ballikaya, Sedat; Chi, Hang; Salvador, James R. ...
Journal of materials chemistry. A, Materials for energy and sustainability,
01/2013, Letnik:
1, Številka:
40
Journal Article
In this study, a series of Ge1–x Mn x Te (x = 0–0.21) compounds were prepared by a melting–quenching–annealing process combined with spark plasma sintering (SPS). The effect of alloying MnTe into ...GeTe on the structure and thermoelectric properties of Ge1–x Mn x Te is profound. With increasing content of MnTe, the structure of the Ge1–x Mn x Te compounds gradually changes from rhombohedral to cubic, and the known R3m to Fm-3m phase transition temperature of GeTe moves from 700 K closer to room temperature. First-principles density functional theory calculations show that alloying MnTe into GeTe decreases the energy difference between the light and heavy valence bands in both the R3m and Fm-3m structures, enhancing a multiband character of the valence band edge that increases the hole carrier effective mass. The effect of this band convergence is a significant enhancement in the carrier effective mass from 1.44 m 0 (GeTe) to 6.15 m 0 (Ge0.85Mn0.15Te). In addition, alloying with MnTe decreases the phonon relaxation time by enhancing alloy scattering, reduces the phonon velocity, and increases Ge vacancies all of which result in an ultralow lattice thermal conductivity of 0.13 W m–1 K–1 at 823 K. Subsequent doping of the Ge0.9Mn0.1Te compositions with Sb lowers the typical very high hole carrier concentration and brings it closer to its optimal value enhancing the power factor, which combined with the ultralow thermal conductivity yields a maximum ZT value of 1.61 at 823 K (for Ge0.86Mn0.10Sb0.04Te). The average ZT value of the compound over the temperature range 400–800 K is 1.09, making it the best GeTe-based thermoelectric material.
The broad-based implementation of thermoelectric materials in converting heat to electricity hinges on the achievement of high conversion efficiency. Here we demonstrate a thermoelectric figure of ...merit ZT of 2.5 at 923 K by the cumulative integration of several performance-enhancing concepts in a single material system. Using non-equilibrium processing we show that hole-doped samples of PbTe can be heavily alloyed with SrTe well beyond its thermodynamic solubility limit of <1 mol%. The much higher levels of Sr alloyed into the PbTe matrix widen the bandgap and create convergence of the two valence bands of PbTe, greatly boosting the power factors with maximal values over 30 μW cm(-1) K(-2). Exceeding the 5 mol% solubility limit leads to endotaxial SrTe nanostructures which produce extremely low lattice thermal conductivity of 0.5 W m(-1) K(-1) but preserve high hole mobilities because of the matrix/precipitate valence band alignment. The best composition is hole-doped PbTe-8%SrTe.
We report a novel hierarchical microstructure in the PbSe-CdSe system, which collectively contributes to significant enhancement in thermoelectric performance, with
ZT
ave
∼ 0.83 across the 400-923 K ...temperature range, the highest reported for p-type, Te-free PbSe systems. We have investigated the local atomic structure as well as the microstructure of a series of PbSe-
x
CdSe materials, up to
x
= 10%. We find that the behavior of the Cd atoms in the octahedral rock salt sites is discordant and results in off-center displacement and distortion. Such off-centered Cd in the PbSe matrix creates (1) L-Σ electronic energy band convergence, (2) a flattened L band, both contributing to higher Seebeck coefficients, and (3) enhanced phonon scattering, which leads to lower thermal conductivity. These conclusions are supported by photoemission yield spectroscopy in air (PYSA), solid state
111
Cd,
77
Se NMR spectroscopy and DFT calculations. Above the solubility limit (>6%CdSe), we also observe endotaxial CdSe nano-precipitates with core-shell architecture formed in PbSe, whose size, distribution and structure gradually change with the Cd content. The nano-precipitates exhibit a zinc blende crystal structure and a tetrahedral shape with significant local strain, but are covered with a thin wurtzite layer along the precipitate/matrix interface, creating a core-shell structure embedded in PbSe. This newly discovered architecture causes a further reduction in lattice thermal conductivity. Moreover, potassium is found to be an effective p-type dopant in the PbSe-CdSe system, leading to an enhanced power factor, a maximum
ZT
of ∼1.4 at 923 K for Pb
0.98
K
0.02
Se-6%CdSe.
Off-centering and core-shell nanoscale CdSe precipitates lead to high thermoelectric performance for p-type, Te-free PbSe systems.
The pseudocubic approach is a new strategy to realize good electronic transport properties and a high thermoelectric figure of merit zT in non‐cubic chalcopyrites through the utilization of ...cubic‐like degenerate electronic bands, via the coexistence of a long‐range cubic framework with short‐range non‐cubic lattice distortions.
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